STF8NM50N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STF8NM50N

Type of STF8NM50N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C:

Rise Time of STF8NM50N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.79

Package: TO220FP

Equivalent transistors for STF8NM50N

STF8NM50N PDF documents for downloads:

1.1. std8nm50n_stf8nm50n_stp8nm50n_stu8nm50n.pdf Size:1402K _st

STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 ?, 5 A MDmesh™II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 3 1 2 STD8NM50N 1 DPAK STF8NM50N IPAK 550 V < 0.79 ? 5 A STP8NM50N STU8NM50N ¦ 100% avalanche tested ¦ Low input capacitances and gate charge 3 3 2 2 1 1 ¦ Low gate input resistance TO-220 TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description D(2) These devices are 500 V N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the G(1) world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. S(3) AM01475v1 Table 1. Device summary Order codes Marking Packages Packaging STD8NM50N DPAK Tape and reel STF8NM50N TO-220FP 8N

4.1. stf8nm60n_std8nm60n_stb8nm60n_stp8nm60n.pdf Size:698K _st

STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature allowed 1 DPAK TO-220FP ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram Application D(2) ¦ Switching applications Description G(1) This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to S(3) yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. AM01475v1 Table 1. Device summary Order c

4.2. std8nm60nd_stf8nm60nd_stp8nm60nd_stu8nm60nd.pdf Size:726K _st

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 ? , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STD8NM60ND 650 V < 0.70 ? 7 A 1 IPAK STF8NM60ND 650 V < 0.70 ? 7 A TO-220 STP8NM60ND 650 V < 0.70 ? 7 A(1) STU8NM60ND 650 V < 0.70 ? 7 A 1. Limited only by maximum temperature allowed 3 3 1 2 1 ¦ The worldwide best RDS(on)* area amongst the DPAK fast recovery diode devices TO-220FP ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram ¦ Extremely high dv/dt and avalanche capabilities Application ¦ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on- resistance and fast switching with

4.3. stp8nm60n_stf8nm60n_std8nm60n_stb8nm60n.pdf Size:700K _st

STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature allowed 1 DPAK TO-220FP ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram Application D(2) ¦ Switching applications Description G(1) This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to S(3) yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. AM01475v1 Table 1. Device summary Order c

See also transistors datasheet: STF6NK70Z , STF7N52DK3 , STF7N52K3 , STF7N95K3 , STF7NM60N , STF7NM80 , STF8N65M5 , STF8NK100Z , 40673 , STF8NM60ND , STF9NK60ZD , STF9NK90Z , STF9NM60N , STFI10NK60Z , STFI13NK60Z , STFI13NM60N , STFI20NK50Z .

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