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STN2NF10 MOSFET (IC) Datasheet. Cross Reference Search. STN2NF10 Equivalent

Type Designator: STN2NF10

Type of STN2NF10 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 3.3

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 2.4

Maximum junction temperature (Tj), °C:

Rise Time of STN2NF10 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.26

Package: SOT223

STN2NF10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STN2NF10 PDF doc:

1.1. stn2nf10.pdf Size:250K _st

STN2NF10
STN2NF10

STN2NF10 N-channel 100V - 0.23? - 2.4A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS(on) ID STN2NF10 100V < 0.26? 2.4A 2 3 Description 2 1 This Power MOSFET is the latest development of SOT-223 STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche ch

1.2. stn2nf10.pdf Size:1182K _kexin

STN2NF10
STN2NF10

SMD Type MOSFET N-Channel MOSFET STN2NF10 (KTN2NF10) Unit:mm SOT-223 6.50±0.2 3.00±0.1 ■ Features 4 ● VDS (V) = 100V ● ID = 2.4 A (VGS = 10V) ● RDS(ON) < 260mΩ (VGS = 10V) 1 2 3 D 0.250 2.30 (typ) Gauge Plane 1.Gate G 2.Drain 0.70±0.1 3.Source 4.60 (typ) S 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Vol

4.1. stn2nf06.pdf Size:357K _st

STN2NF10
STN2NF10

STN2NF06 N - CHANNEL 60V - 0.12? - 2A - SOT-223 STripFET? POWER MOSFET TYPE VDSS RDS(on) ID STN2NF06 60 V < 0.15 ? 2 A TYPICAL R = 0.12 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 2 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 DESCRIPTION This Power Mosfet is the latest development of SOT-223 STMicroelectronics unique "Single

4.2. stn2nf06l.pdf Size:290K _st

STN2NF10
STN2NF10

STN2NF06L N-CHANNEL 60V - 0.1 ? - 2A SOT-223 STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STN2NF06L 60 V <0.12 ? 2 A TYPICAL RDS(on) = 0.1 ? EXTREMELY HIGH dv/dt CAPABILITY 2 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 3 LOW THRESHOLD DRIVE 2 1 DESCRIPTION SOT-223 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-ba

See also transistors datasheet: STL8N65M5 , STL90N3LLH6 , STL9N3LLH5 , STN1HNK60 , STN1N20 , STN1NF10 , STN1NK60Z , STN1NK80Z , IRFZ44N , STN3N40K3 , STN3N45K3 , STN3NF06 , STN3NF06L , STN3PF06 , STN4NF03L , STN4NF06L , STN4NF20L .

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