STP11NM60FD MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STP11NM60FD

Type of STP11NM60FD transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 160

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 11

Maximum junction temperature (Tj), °C:

Rise Time of STP11NM60FD transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.45

Package: TO220;_TO220FP

Equivalent transistors for STP11NM60FD

STP11NM60FD PDF documents for downloads:

1.1. stb11nm60fd_stb11nm60fd-1_stp11nm60fd_stp11nm60fdfp.pdf Size:493K _st

STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40? - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh™ Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID 3 2 3 STB11NM60FD 600V <0.45? 11A 1 2 1 TO-220 STB11NM60FD-1 600V <0.45? 11A TO-220FP STP11NM60FD 600V <0.45? 11A STP11NM60FDFP 600V <0.45? 11A ¦ 100% avalanche tested 3 1 ¦ High dv/dt and avalanche capabilities 3 2 1 ¦ Low input capacitance and gate charge D?PAK D?PAK I?PAK ¦ Low gate input resistance ¦ Tight process control and high manufacturing Internal schematic diagram yields Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications ¦ Switching application Order codes Part number Marking Package Packaging STB11NM60FD B11NM60FD D?PAK Tape & reel STB11NM60

1.2. stp11nm60n_stf11nm60n_std11nm60n_stb11nm60n.pdf Size:635K _st

STx11NM60N N-channel 600 V, 0.37 ?, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 ? 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 ? 10 A STD11NM60N 650 V 0.45 ? 10 A STD11NM60N-1 650 V 0.45 ? 10 A STF11NM60N 650 V 0.45 ? 10 A(1) STP11NM60N 650 V 0.45 ? 10 A 3 3 3 2 2 1 1. Limited only by maximum temperature allowed 1 1 I?PAK TO-220FP D?PAK ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram Application ¦ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

1.3. std11nm60nd_stf11nm60nd_sti11nm60nd_stp11nm60nd_stu11nm60nd.pdf Size:750K _st

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 ?, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID 3 3 STD11NM60ND 10 A 1 2 1 STF11NM60ND 10 A(1) DPAK I?PAK STI11NM60ND 650 V < 0.45 ? 10 A 3 2 STP11NM60ND 10 A 1 STU11NM60ND 10 A IPAK 1. Limited only by maximum temperature allowed 3 3 2 2 ¦ The worldwide best RDS(on)* area amongst the 1 1 fast recovery diode devices TO-220FP TO-220 ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance ¦ Extremely high dv/dt and avalanche capabilities Figure 1. Internal schematic diagram Application Switching applications D(2) Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation G(1) of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all adva

1.4. stp11nm60_stp11nm60fp_stb11nm60_stb11nm60-1.pdf Size:367K _st

STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-channel 650V @ TJmax - 0.4? - 11A TO-220/FP/D2PAK/I2PAK MDmesh™ Power MOSFET General features VDSS Type RDS(on) ID (@TJ=TJmax) 3 3 2 2 1 1 STP11NM60 650V <0.45? 11A TO-220 TO-220FP STP11NM60FP 650V <0.45? 11A STB11NM60 650V <0.45? 11A STB11NM60-1 650V <0.45? 11A ¦ High dv/dt and avalanche capabilities 3 3 2 1 1 ¦ 100% avalanche tested i2PAK D2PAK ¦ Low input capacitance and gate charge ¦ Low gate input resistance Internal schematic diagram Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Appli

1.5. stp11nm60a.pdf Size:367K _st

STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4? - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STP11NM60A 600 V <0.45? 11 A STP11NM60AFP 600 V <0.45? 11 A STB11NM60A-1 600 V <0.45? 11 A TYPICAL RDS(on) = 0.4? 3 3 2 1 2 HIGH dv/dt 1 LOW INPUT CAPACITANCE AND GATE I2PAK TO-220 CHARGE LOW GATE INPUT RESISTANCE 3 2 1 TO-220FP DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

1.6. stp11nm60fd.pdf Size:349K _st

STP11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V - 0.40? - 11A TO-220 / TO-220FP/I2PAK FDmesh™Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) ID STP11NM60FD 600 V < 0.45? 11 A STP11NM60FDFP 600 V < 0.45? 11 A STB11NM60FD-1 600 V < 0.45? 11 A 3 3 TYPICAL RDS(on) = 0.40? 2 2 1 1 HIGH dv/dt AND AVALANCHE CAPABILITIES TO-220 TO-220FP 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE 3 2 1 LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH I2PAK MANUFACTURING YIELDS DESCRIPTION The FDmesh™ associates all advantages of re- INTERNAL SCHEMATIC DIAGRAM duced on-resistance and fast switching with an in- trinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in par- ticular ZVS phase-shift converters. APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP11NM60FD P11NM60FD TO-220 TUBE STP11NM60FDFP P1

1.7. stp11nm60n_stb11nm60n_std11nm60n_stf11nm60n.pdf Size:632K _st

STx11NM60N N-channel 600 V, 0.37 ?, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK Features VDSS RDS(on) 3 Type ID 3 2 3 (@TJmax) max 1 2 1 1 STB11NM60N-1 650 V 0.45 ? 10 A DPAK TO-220 IPAK STB11NM60N 650 V 0.45 ? 10 A STD11NM60N 650 V 0.45 ? 10 A STD11NM60N-1 650 V 0.45 ? 10 A STF11NM60N 650 V 0.45 ? 10 A(1) STP11NM60N 650 V 0.45 ? 10 A 3 3 3 2 2 1 1. Limited only by maximum temperature allowed 1 1 I?PAK TO-220FP D?PAK ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram Application ¦ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

1.8. stp11nm60a_stp11nm60afp_stb11nm60a-1.pdf Size:388K _st

STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4? - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STP11NM60A 600 V <0.45? 11 A STP11NM60AFP 600 V <0.45? 11 A STB11NM60A-1 600 V <0.45? 11 A TYPICAL RDS(on) = 0.4? 3 3 2 1 2 HIGH dv/dt 1 LOW INPUT CAPACITANCE AND GATE I2PAK TO-220 CHARGE LOW GATE INPUT RESISTANCE 3 2 1 TO-220FP DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

See also transistors datasheet: STP10NM65N , STP11N52K3 , STP11NK40Z , STP11NK40ZFP , STP11NK50Z , STP11NK50ZFP , STP11NM50N , STP11NM60 , IRFP250 , STP11NM60ND , STP11NM80 , STP120N4F6 , STP120NF04 , STP120NF10 , STP12N120K5 , STP12N65M5 , STP12NK30Z .

Keywords