STP4N150 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STP4N150

Type of STP4N150 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 160

Maximum drain-source voltage |Uds|, V: 1500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 3.1

Maximum junction temperature (Tj), °C:

Rise Time of STP4N150 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 7

Package: TO220

Equivalent transistors for STP4N150

STP4N150 PDF documents for downloads:

1.1. stfw4n150_stp4n150_stw4n150.pdf Size:756K _st

STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 ?, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS(on) max ID Pw STFW4N150 1500 V < 7 ? 4 A 63 W 3 STP4N150 1500 V < 7 ? 4 A 160 W 2 3 1 2 1 STW4N150 1500 V < 7 ? 4 A 160 W TO-220 TO-247 ¦ 100% avalanche tested ¦ Intrinsic capacitances and Qg minimized 3 ¦ High speed switching 2 1 ¦ Fully isolated TO-3PF plastic packages TO-3PF ¦ Creepage distance path is 5.4 mm (typ.) for TO-3PF Figure 1. Internal schematic diagram. Application ¦ Switching applications D(2) Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has G(1) designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, S(3) gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. AM01475v1 Table 1. Device

4.1. stp4n100.pdf Size:366K _st

STP4N100 STP4N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N100 1000 V < 3.5 ? 4 A STP4N100FI 1000 V < 3.5 ? 2.2 A TYPICAL R = 3.1 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INPUT CAPACITANCE 2 2 1 1 LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING DC-AC INVERTERS FOR WELDING INTERNAL SCHEMATIC DIAGRAM EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLY (UPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4N100 STP4N100FI VDS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain- gate Voltage (RGS = 20 k?)1000 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC4 2.2 A ID Drain Current (continuous) at Tc = 100 oC2.5 1.4 A IDM(•) Drain Current (pulsed) 16 16 A Ptot Total Dissipation at Tc

5.1. stp4nk50z.pdf Size:664K _st

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V < 2.7 ? 3 A 45 W STP4NK50ZFP 500 V < 2.7 ? 3 A 20 W STD4NK50Z 500 V < 2.7 ? 3 A 45 W STD4NK50Z-1 500 V < 2.7 ? 3 A 45 W 3 TYPICAL RDS(on) = 2.3 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 VERY GOOD MANUFACTURING 3 2 1 REPEATIBILITY 1 IPAK DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH

5.2. stp4nb30.pdf Size:331K _st

STP4NB30 STP4NB30FP N-CHANNEL 300V - 1.8? - 4A - TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID STP4NB30 300 V < 2 ? 4 A STP4NB30FP 300 V < 2 ? 4 A TYPICAL RDS(on) = 1.8 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 NEW HIGH VOLTAGE BENCHMARK 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP

5.3. stp4nb100.pdf Size:302K _st

STP4NB100 STP4NB100FP ® N - CHANNEL 1000V - 4? - 3.8A - TO-220/TO-220FP PowerMESH? MOSFET TYPE V R I DSS DS(on) D STP4NB100 1000 V < 4.4 ? 3.8 A STP4NB100FP 1000 V < 4.4 ? 3.8 A TYPICAL R = 4 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche INTERNAL SCHEMATIC DIAGRAM and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE

5.4. stp4nc50(fp).pdf Size:324K _st

STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2? - 3.5A TO-220/TO-220FP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC50 500 V < 2.7 ? 3.5 A STP4NC50FP 500 V < 2.7 ? 3.5 A TYPICAL RDS(on) = 2.2 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 NEW HIGH VOLTAGE BENCHMARK 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area INTERNAL SCHEMATIC DIAGRAM figure of merit while keeping the device at the lead- ing edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NC50 STP4NC50FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V

5.5. stp4na100.pdf Size:77K _st

STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NA100 1000 V <3. 5 ? 4.2 A TYPICAL R = 2.9 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 REDUCED THRESHOLD VOLTAGE SPREAD 2 1 DESCRIPTION This series of POWER MOSFETS represents TO-220 the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 1000 V VDGR 1000 V Drain- gate Vol

5.6. stb4nk60zx_std4nk60zx_stp4nk60z_stp4nk60zfp.pdf Size:577K _st

STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 ? - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP Features RDS(on) Type VDSS PW ID 3 3 2 max 3 1 1 2 1 STB4NK60Z 600 V < 2 ? 70 W 4 A TO-220 DPAK IPAK STB4NK60Z-1 600 V < 2 ? 70 W 4 A STD4NK60Z 600 V < 2 ? 70 W 4 A STD4NK60Z-1 600 V < 2 ? 70 W 4 A STP4NK60Z 600 V < 2 ? 70 W 4 A STP4NK60ZFP 600 V < 2 ? 25 W 4 A 3 3 2 3 1 2 1 1 ¦ 100% avalanche tested TO-220FP D?PAK I?PAK ¦ Very low intrinsic capacitances Figure 1. Internal schematic diagram Application ¦ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage

5.7. stp4nb50.pdf Size:163K _st

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5? - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V < 2.8 ? 3.8 A STP4NB50FP 500 V < 2.8 ? 2.5 A TYPICAL RDS(on) = 2.5 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 VERY LOW INTRINSIC CAPACITANCES 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABS

5.8. stp4nk60z.pdf Size:759K _st

STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1 STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL600V-1.76?-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK60Z 600 V <2? 4 A 70 W STP4NK60ZFP 600 V <2? 4 A 25 W STB4NK60Z 600 V <2? 4 A 70 W 3 STB4NK60Z-1 600 V < 2 ? 4 A 70 W 1 3 STD4NK60Z 600 V <2? 4 A 70 W 2 D2PAK 1 STD4NK60Z-1 600 V <2? 4 A 70 W TO-220 TO-220FP TYPICAL RDS(on) = 1.76 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 GATE CHARGE MINIMIZED 2 3 1 2 1 1 VERY LOW INTRINSIC CAPACITANCES IPAK VERY GOOD MANUFACTURING DPAK I2PAK REPEATIBILITY DESCRIPTION INTERNAL SCHEMATIC DIAGRAM The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST ful

5.9. stp4n20.pdf Size:258K _st

STP4N20 ® N - CHANNEL 200V - 1.3 ? - 4A TO-220 POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4N20 200 V < 1.5 ? 4 A TYPICAL R = 1.3 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 150 oC OPERATING TEMPERATURE 3 APPLICATION ORIENTED 2 1 CHARACTERIZATION APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC CONVERTERS & DC-AC INVERTERS TELECOMMUNICATION POWER SUPPLIES INDUSTRIAL MOTOR DRIVERS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k?)200 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC4 A ID Drain Current (continuous) at Tc = 100 oC2.5 A IDM(•) Drain Current (pulsed) 16 A Ptot Total Dissipation at Tc = 25 oC60 W Derating Factor 0.48 W/oC o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Tem

5.10. stp4nc60-fp--1.pdf Size:356K _st

STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8? - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC60 600V <2.2? 4.2A STP4NC60FP 600V <2.2? 4.2A STB4NC60-1 600V <2.2? 4.2A TYPICAL RDS(on) = 1.8? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 TO-220 TO-220FP 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION I2PAK The PowerMESH™II is the evolution of the first (Tabless TO-220) generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)4NC60(-1) STP4NC60FP VDS Drain-source

5.11. stp4na60.pdf Size:405K _st

STP4NA60 STP4NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA60 600 V < 2.2 ? 4.3 A STP4NA60FI 600 V < 2.2 ? 2.7 A TYPICAL R = 1.85 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled DS(on) INTERNAL SCHEMATIC DIAGRAM ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NA60 STP4NA60FI VDS Dra

5.12. std4nk50zd_std4nk50zd-1_stf4nk50zd_stp4nk50zd.pdf Size:903K _st

STD4NK50ZD - STD4NK50ZD-1 STF4NK50ZD - STP4NK50ZD N-channel 500V - 2.4? - 3A - TO-220 - TO-220FP- DPAK - IPAK Fast diode SuperMESH™ Power MOSFET General features 3 Type VDSS RDS(on) ID Pw 1 STD4NK50ZD-1 500V <2.7? 3A 45W 3 DPAK STD4NK50ZD 500V <2.7? 3A 45W 2 1 STF4NK50ZD 500V <2.7? 3A 20W TO-220 STP4NK50ZD 500V <2.7? 3A 45W ¦ 100% avalanche tested 3 3 ¦ Extremely high dv/dt capability 2 2 1 1 ¦ Gate charge minimized IPAK TO-220FP ¦ Very low intrinsic capacitances ¦ Very good manufacturing repeability Internal schematic diagram Description The fast SuperMESH™ series associates all advantages of reduced on-resistance, zener gate protection and outstanding dc/dt capability with a Fast body-drain recovery diode. Such series complements the FDmesh™ advanced tecnology. Applications ¦ Switching application Order codes Part number Marking Package Packaging STD4NK50ZD-1 D4NK50ZD-1 IPAK Tube STD4NK50ZD D4NK50ZD DPAK Tape & reel STF4NK50ZD F4NK50ZD TO-

5.13. stp4nm60.pdf Size:548K _st

STP4NM60 STD3NM60 - STD3NM60-1 N-CHANNEL 600V - 1.3? - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NM60 600 V < 1.5 ? 4 A 69 W STD3NM60 600 V < 1.5 ? 3 A 42 W STD3NM60-1 600 V < 1.5 ? 3 A 42 W 3 2 TYPICAL RDS(on) = 1.3 ? 1 HIGH dv/dt AND AVALANCHE CAPABILITIES IPAK IMPROVED ESD CAPABILITY TO-220 LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 TIGHT PROCESS CONTROL AND HIGH 1 MANUFACTORING YIELDS DPAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET INTERNAL SCHEMATIC DIAGRAM technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. APPLICATIONS Th

5.14. stf4n62k3_sti4n62k3_stp4n62k3_stu4n62k3.pdf Size:917K _st

STF4N62K3, STI4N62K3 STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 ?, 3.8 A SuperMESH3™ Power MOSFET TO-220FP, IPAK, TO-220, I?PAK Features Order codes VDSS RDS(on) max ID Pw 3 2 STF4N62K3 25 W 1 3 2 STI4N62K3 70 W 1 620 V < 2 ? 3.8 A IPAK TO-220FP STP4N62K3 70 W STU4N62K3 70 W ¦ 100% avalanche tested ¦ Extremely high dv/dt capability 3 3 2 1 2 1 ¦ Gate charge minimized I?PAK TO-220 ¦ Very low intrinsic capacitance ¦ Improved diode reverse recovery characteristics ¦ Zener-protected Figure 1. Internal schematic diagram D(2) Application Switching applications Description G(1) These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on S(3) resistance, superior dynamic performance and AM01476v1 high avalanche capability, making it especially suitab

5.15. std4n52k3_stf4n52k3_stp4n52k3_stu4n52k3.pdf Size:932K _st

STD4N52K3, STF4N52K3 STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 ?, IPAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) Order codes VDSS ID Pw max 3 3 2 1 1 STD4N52K3 2.5 A 45 W DPAK IPAK STF4N52K3 2.5 A 20 W 525 V < 2.6 ? STP4N52K3 2.5 A (1) 45 W STU4N52K3 2.5 A 45 W 1. Limited by package 3 ¦ 100% avalanche tested 3 2 2 1 1 ¦ Extremely high dv/dt capability TO-220 TO-220FP ¦ Gate charge minimized ¦ Very low intrinsic capacitance ¦ Improved diode reverse recovery Figure 1. Internal schematic diagram characteristics D(2) ¦ Zener-protected Application Switching applications G(1) Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology S(3) combined with a new optimized vertical structure. AM01476v1 The resulting product has an extremely low on resistance, superior dynamic performance and high avalanc

5.16. stb4n62k3_stf4n62k3_stp4n62k3_sti4n62k3.pdf Size:801K _st

STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 N-channel 620 V, 1.8 ?, 3.8 A SuperMESH3™ Power MOSFET D2PAK, TO-220FP, I2PAK, TO-220 Preliminary data Features RDS(on) Type VDSS ID Pw max 3 3 3 1 1 STB4N62K3 70 W 2 1 D?PAK STF4N62K3 25 W TO-220FP 620 V < 1.95 ? 3.8 A STI4N62K3 70 W STP4N62K3 70 W ¦ 100% avalanche tested 3 2 3 ¦ Extremely high dv/dt capability 1 2 1 ¦ Gate charge minimized TO-220 I?PAK ¦ Very low intrinsic capacitances ¦ Improved diode reverse recovery characteristics ¦ Zener-protected Figure 1. Internal schematic diagram Application D(2) ¦ Switching applications Description These devices are made using the G(1) SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and S(3) high avalanche capability, making it espec

5.17. stp4nb80.pdf Size:354K _st

STP4NB80 STP4NB80FP ® N - CHANNEL 800V - 3? - 4A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 ? 4 A STP4NB80FP 800 V 3.3 ? 4 A TYPICAL R = 3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol

5.18. stp4nb50_stp4nb50fp.pdf Size:176K _st

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5? - 3.8A - TO-220/TO-220FP PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V < 2.8 ? 3.8 A STP4NB50FP 500 V < 2.8 ? 2.5 A TYPICAL RDS(on) = 2.5 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 VERY LOW INTRINSIC CAPACITANCES 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABS

5.19. std3nm60_std3nm60-1_stp4nm60.pdf Size:705K _st

STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 ?, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET Features VDSS RDS(on) Type ID PW (@Tjmax) max 3 1 STD3NM60 3 2 3 A 42 W DPAK 1 STD3NM60-1 650 < 1.5 ? TO-220 STP4NM60 4 A 69 W 3 2 1 ¦ High dv/dt and avalanche capabilities IPAK ¦ Improved ESD capability ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram ¦ Tight process control and high manufacturing yields Applications ¦ Switching Description Modems technology applies the benefits of the multiple drain process to STMicroelectronics' well- known PowerMESH™ horizontal layout structure. The resulting product offers low on-resistance, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order code Marking Package Packing STD3NM60 D3NM60 DPAK Tape and reel STD3NM60-1 D3NM60 IPAK Tube STP4NM60 P4NM60 TO-220 Tube September 2009 Doc ID 8370 Rev

5.20. stp4nk50z_stp4nk50zfp_std4nk50z_std4nk50z-1.pdf Size:666K _st

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z 500 V < 2.7 ? 3 A 45 W STP4NK50ZFP 500 V < 2.7 ? 3 A 20 W STD4NK50Z 500 V < 2.7 ? 3 A 45 W STD4NK50Z-1 500 V < 2.7 ? 3 A 45 W 3 TYPICAL RDS(on) = 2.3 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 VERY GOOD MANUFACTURING 3 2 1 REPEATIBILITY 1 IPAK DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH

5.21. stp4nc80z.pdf Size:526K _st

STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4? - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 ? 4 A STB4NC80Z/-1 800V < 2.8 ? 4 A 3 1 TYPICAL RDS(on) = 2.4 ? D2PAK 3 2 EXTREMELY HIGH dv/dt AND CAPABILITY 1 GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 2 I2PAK1 DESCRIPTION (Tabless TO-220) The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)4NC80Z(-1)

5.22. stp4nk80z_stp4nk80zfp_std4nk80z_std4nk80z-1.pdf Size:550K _st

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3? - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 2 STP4NK80Z 800 V < 3.5 ? 3 A 1 STP4NK80ZFP 800 V < 3.5 ? 3 A TO-220 TO-220FP STD4NK80Z 800 V < 3.5 ? 3 A STD4NK80Z-1 800 V < 3.5 ? 3 A ¦ Extremely high dv/dt capability 3 3 2 1 1 ¦ 100% avalanche tested DPAK IPAK ¦ Gate charge minimized ¦ Very low intrinsic capacitances ¦ Very good manufacturing repeatibility Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ¦ Switching applicati

5.23. stp4nc60a.pdf Size:338K _st

STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8? - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC60A 600V < 2? 4.2A STP4NC60AFP 600V < 2? 4.2A STB4NC60A-1 600V < 2? 4.2A TYPICAL RDS(on) = 1.8? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 TO-220 TO-220FP 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION The PowerMESH™II is the evolution of the first (Tabless TO-220) generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)4NC60A(-1) STP4NC60AFP VDS Drain-source

5.24. stp4na80-fi.pdf Size:391K _st

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V < 3 ? 4 A STP4NA80FI 800 V < 3 ? 2.5 A TYPICAL R = 2.4 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled DS(on) INTERNAL SCHEMATIC DIAGRAM ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NA80 STP4NA80FI VDS Drain-source

5.25. stp4nb100-.pdf Size:53K _st

STP4NB100 STP4NB100FP ? N - CHANNEL 1000V - 4? - 3.8A - TO-220/TO-220FP PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB100 1000 V < 4.4 ? 3.8 A STP4NB100FP 1000 V < 4.4 ? 2.1 A TYPICAL R =4 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY(UPS) DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS

5.26. stp4nc80z_stp4nc80zfp_stb4nc80z_stb4nc80z-1.pdf Size:553K _st

STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4? - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 ? 4 A STB4NC80Z/-1 800V < 2.8 ? 4 A 3 1 TYPICAL RDS(on) = 2.4 ? D2PAK 3 2 EXTREMELY HIGH dv/dt AND CAPABILITY 1 GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 2 I2PAK1 (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrat- ing back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capa- bility with higher ruggedness performance as re- quested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP4NC80

5.27. stp4nk80z.pdf Size:620K _st

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-CHANNEL 800V - 3? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK80Z 800 V < 3.5 ? 3 A 80 W STP4NK80ZFP 800 V < 3.5 ? 3 A 25 W STD4NK80Z 800 V < 3.5 ? 3 A 80 W STD4NK80Z-1 800 V < 3.5 ? 3 A 80 W 3 3 2 2 TYPICAL RDS(on) = 3 ? 1 1 TO-220 TO-220FP EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 3 2 VERY GOOD MANUFACTURING 1 1 REPEATIBILITY DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS

5.28. stp4na80.pdf Size:383K _st

STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA80 800 V < 3 ? 4 A STP4NA80FI 800 V < 3 ? 2.5 A TYPICAL R = 2.4 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled DS(on) INTERNAL SCHEMATIC DIAGRAM ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NA80 STP4NA80FI VDS Drain-source

5.29. stp4nb80-.pdf Size:82K _st

STP4NB80 STP4NB80FP ® N - CHANNEL 800V - 3? - 4A - TO-220/TO-220FP PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB80 800 V 3.3 ? 4 A STP4NB80FP 800 V 3.3 ? 4 A TYPICAL R = 3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATIN

5.30. stp4na60fp.pdf Size:96K _st

STP4NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP4NA60FP 600 V < 2.2 ? 2.7 A TYPICAL R = 1.85 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 REDUCED THRESHOLD VOLTAGE SPREAD 2 1 DESCRIPTION This series of POWER MOSFETS represents TO-220FP the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain- gate Volt

5.31. stp4na40.pdf Size:382K _st

STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP4NA40 400 V < 2 ? 4 A STP4NA40FI 400 V < 2 ? 2.8 A TYPICAL R = 1.7 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled DS(on) INTERNAL SCHEMATIC DIAGRAM ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NA40 STP4NA40FI VDS Drain-sour

See also transistors datasheet: STP40NF03L , STP40NF10 , STP40NF10L , STP40NF12 , STP40NF20 , STP42N65M5 , STP45NF06 , STP45NF3LL , IRF9540 , STP4N20 , STP4N52K3 , STP4N62K3 , STP4NK50Z , STP4NK50ZD , STP4NK50ZFP , STP4NK60Z , STP4NK60ZFP .

Keywords