STP75NF75 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STP75NF75

Type of STP75NF75 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 300

Maximum drain-source voltage |Uds|, V: 75V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C:

Rise Time of STP75NF75 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.013

Package: TO220;_TO220FP

Equivalent transistors for STP75NF75

STP75NF75 PDF documents for downloads:

1.1. stb75nf75_stp75nf75_stp75nf75fp.pdf Size:426K _st

STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095? - 80A - TO-220 - TO-220FP - D2PAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB75NF75 75V <0.011? 80A(1) 3 3 2 STP75NF75 75V <0.011? 80A(1) 2 1 1 STP75NF75FP 75V <0.011? 80A(1) TO-220 TO-220FP 1. Current limited by package ¦ Exceptional dv/dt capability 3 ¦ 100% avalanche tested 1 D?PAK Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process Internal schematic diagram has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Applications ¦ Switching application Order codes Part number Marking Package Packaging STB75NF75T4 B75NF75 D?PAK Tape & reel STP75NF75 P75NF75 TO-220 Tube STP

1.2. stp75nf75l.pdf Size:382K _st

STP75NF75L STB75NF75L STB75NF75L-1 N-CHANNEL 75V - 0.009 ? - 75A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STB75NF75L/-1 75 V <0.011 ? 75 A STP75NF75L 75 V <0.011 ? 75 A TYPICAL RDS(on) = 0.009? 3 EXCEPTIONAL dv/dt CAPABILITY 3 1 2 1 100% AVALANCHE TESTED I2PAK LOW THRESHOLD DRIVE D2PAK TO-262 TO-263 DESCRIPTION This MOSFET series realized with STMicroelectronics 3 unique STripFET process has specifically been designed 2 1 to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- TO-220 efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SOLENOID AND RELAY DRIVERS DC MOTOR CONTROL DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 75 V VDG

1.3. stp75nf75.pdf Size:92K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor STP75NF75 FEATURES ·Drain Current –ID= 80A@ TC=25? ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.011?(Max) DESCRIPTION Suitable as primary switch in advanced high-efficiency, high- frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirements . APPLICATIONS ·Solenoid and relay drivers ·DC motor control ·DC-DC converters DC ·Automotive environment ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pluse (tp?10?s) 320 A PD Total Dissipation @TC=25? 300 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UN

See also transistors datasheet: STP6NK60Z , STP6NK90Z , STP70N10F4 , STP70NF03L , STP70NS04ZC , STP75N3LLH6 , STP75NF20 , STP75NF68 , 2SK170 , STP75NS04Z , STP76NF75 , STP78N75F4 , STP7N52DK3 , STP7N52K3 , STP7N95K3 , STP7NK30Z , STP7NK40Z .

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