BSC080P03LSG MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BSC080P03LSG

Type of BSC080P03LSG transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 89

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), °C:

Rise Time of BSC080P03LSG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.008

Package: SuperSO8

Equivalent transistors for BSC080P03LSG

BSC080P03LSG PDF documents for downloads:

1.1. bsc080p03lsg_rev1.04.pdf Size:550K _infineon

& $ & $ $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V DS Q * 92??6= 8 m DS(on) max Q ?92?46>6?D >@56 ? 0 A D Q &@8:4 =6F6= Q T @A6B2D:?8 D6>A6B2DEB6 Q F2=2?496 B2D65 + @", 4@>A=:2?D PG?TDSON?8 Q .8C . CA64:2==I CE:D65 7@B ?@D63@@< 2AA=:42D:@?C Q "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking 1-0 2=11 Packing , * &, ! PG?TDSON?8 080P0 LS Yes Dry !-C59@9 =-?5:3> 2D T E?=6CC @D96BG:C6 CA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Unit @?D:?E@EC 5B2:? 4EBB6?D T ? 0 A D C T ? 0 C 1) ?16 T A 2) *E=C65 5B2:? 4EBB6?D ?120 T D pulse C F2=2?496 6?6B8I C:?8=6 AE=C6 248 m AS D GS !2D6 C@EB46 F@=D286 ±25 V GS T *@G6B 5:CC:A2D:@? 89 W tot C 1) 2.5 T A ) A6B2D:?8 2?5 CD@B286 D6>A6B2DEB6 °C j stg , 4=2CC $ , " ' <. <. ,@=56B:?8 D6>A6B2DEB6 T # 4=:>2D:4 42D68@BI #( # 55/150/56 + 6F A286  & $ & Parameter Symb?I C?nditi?ns VaIues Unit min. typ. max. '41=9-8 /4-=-/?1=5>?5/> -96B>2= B6C:CD2?46 ? ? 1.4 K/W th C ;E?4D:@?

4.1. bsc080n03msg_rev1.15.pdf Size:539K _infineon

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4.2. bsc080n03ls_rev1.25.pdf Size:688K _infineon

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?D Q "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking - ( &- ! G? D ON? N !-C59@9 =-?5:3> 2D T E?=6CC @D96BG:C6 CA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Unit / T @?D:?E@EC 5B2:? 4EBB6?D D G C / T G C / T 4 G C / G 7 T C / T G 14 % 0 ) t T 1 *E=C65 5B2:? 4EBB6?D ) D p l e C T 4 F2=2?496 4EBB6?D C:?8=6 AE=C64) C F2=2?496 6?6B8I C:?8=6 AE=C6 1 m D G / D D , 6F6BC6 5:@56 5v t v t t VC k µ T j m x !2D6 C@EB46 F@=D286 ± G 1) $ -. 2?5 $ - , 6F A286  & " & !-C59@9 =-?5:3> 2D T E?=6CC @D96BG:C6 CA64:7:65 j P

See also transistors datasheet: BSC067N06LS3G , BSC070N10NS3G , BSC072N03LDG , BSC076N06NS3G , BSC077N12NS3G , BSC079N10NSG , BSC080N03LSG , BSC080N03MSG , 2SK3569 , BSC082N10LSG , BSC084P03NS3G , BSC084P03NS3EG , BSC0901NS , BSC0902NS , BSC0908NS , BSC0909NS , BSC090N03LSG .

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