IPA50R520CP MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPA50R520CP

Type of IPA50R520CP transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7

Maximum junction temperature (Tj), °C:

Rise Time of IPA50R520CP transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.52

Package: TO220_FullPAK

Equivalent transistors for IPA50R520CP

IPA50R520CP PDF documents for downloads:

1.1. ipa50r520cp_rev2.0.pdf Size:546K _infineon

Type IPA50R520CP C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Package @Tjmax 550 V "1 W *EM;IJ 7H=; 1 nC g typ W #NJH;C; :L :J H7J;: W &?=> F;7A 9KHH;DJ 97F78?B?JO W .8 01>53:10 2;= W &7H: 1E?D= 1+ .1 7J Z! KDB;II EJ>;HM?I; IF;9?; ;D;H=O I?D=B; FKBI; 166 m AS D DD 2) ) 4 0.25 L7B7D9>; ;D;H=O H;F;J?J?L; t A D DD A 2) ) 2.5 L7B7D9>; 9KHH;DJ H;F;J?J?L; t A A A 4 + - 1$#2 :v /dt HK==;:D;II :v /dt 50 V/ns DS %7J; IEKH9; LEBJ7=; static ±20 V GS ! f &P ± 0 Z! .EM;H :?

4.1. ipa50r299cp_rev2.0.pdf Size:552K _infineon

IPA50R299CP C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL:HI ;>I / M . < , + 0.299 DS(on) max V 2 AIG6 ADL <6I: 8=6G<: 2 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI 1, #- 0) V . J6>A;>:9 688DG9>C< ID '"!" ;;8"#& $ 5> 01>53:10 2;= V %6G9 6C9 HD;IHL>I8=>C< 0* -0 IDEDAD<>:H V * -# ;DG + DI:7DD@ 696EI:G -!- 6C9 ) ! 13 V -4* ;DG + DI:7DD@ 696EI:G -!- 6C9 ) ! 13 Type Package Marking IPA50 299CP PG?TO220FP 5 299P "-C59@9 =-?5:3> 6I Y JCA:HH DI=:GL>H: HE:8>;>:9 j Parameter Symb?I C?nditi?ns VaIue Unit Y 12 A DCI>CJDJH 9G6>C 8JGG:CI1) D C Y 8 C Y 26 -JAH:9 9G6>C 8JGG:CI2) D pulse C 3 K6A6C8=: :C:GCI>K: t A D DD A 2) ) 4.4 K6A6C8=: 8JGG:CI G:E:I>I>K: t A A A 3 * , 0#"1 9v /dt GJ<<:9C:HH 9v /dt 50 V/ns DS $6I: HDJG8: KDAI6<: static ±20 V GS ; %O ± 0 Y -DL:G 9>

4.2. ipa50r399cp_rev2.1.pdf Size:561K _infineon

IPA50R399CP C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL:HI ;>I / M . < , + 0. 99 DS(on) max V 2 AIG6 ADL <6I: 8=6G<: 17 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI 0) 1, #JAA - ( V . J6Ai;>:9 688DG9>C< ID '"!" ;;8"#& $ 5> 01>53:10 2;= V %6G9 6C9 HD;IHL>I8=>C< 0* -0 IDEDAD<>:H V ! * -# ;DG )6BE 6AA6HI V -4* 0I6<:H )6BE 6AA6HI ) ! 6C9 -!- 13 Type Package Marking IPA50 99CP PG?TO220FP 5 99P "-C59@9 =-?5:3> 6I Y JCA:HH DI=:GL>H: HE:8>;>:9 j Parameter Symb?I C?nditi?ns VaIue Unit Y 9 A DCI>CJDJH 9G6>C 8JGG:CI1) D C Y 6 C Y 20 -JAH:9 9G6>C 8JGG:CI2) D pulse C 3 K6A6C8=: :C:GCI>K: t A D DD A 2) ) . K6A6C8=: 8JGG:CI G:E:I>I>K: t A A A 3 * , 0#"1 9v /dt GJ<<:9C:HH 9v /dt 50 V/ns DS $6I: HDJG8: KDAI6<: static ±20 V GS ; %O ± 0 Y -DL:G 9>HH>E6I>DC 8 W tot C

4.3. ipa50r350cp_rev2.1.pdf Size:578K _infineon

IPA50R350CP C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL:HI ;>I / M . , + g 0. 50 DS(on) max V 2 AIG6 ADL <6I: 8=6G<: 19 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI 1, #JAA - ( 0) V . J6iified 688DG9>C< ID '"!" ;;8"#& $ 5> 01>53:10 2;= V %6G9 6C9 HD;IHL>I8=>C< 0* -0 IDEDAD<>:H V * -# ;DG + DI:7DD@ 696EI:G -!- 6C9 ) ! 13 V -4* ;DG + DI:7DD@ 696EI:G -!- 6C9 ) ! 13 Type Package Marking IPA50 50CP PG?TO220FP 5 50P "-C59@9 =-?5:3> 6I Y JCA:HH DI=:GL>H: HE:8>;>:9 j Parameter Symb?I C?nditi?ns VaIue Unit Y 10 A DCI>CJDJH 9G6>C 8JGG:CI1) D C Y 6 C Y 22 -JAH:9 9G6>C 8JGG:CI2) D pulse C 3 K6A6C8=: :C:GCI>K: t A D DD A 2) ) .7 K6A6C8=: 8JGG:CI G:E:I>I>K: t A A A 3 * , 0#"1 9v /dt GJ<<:9C:HH 9v /dt 50 V/ns DS $6I: HDJG8: KDAI6<: static ±20 V GS ; %O ± 0 Y -DL:G

4.4. ipa50r380ce_2_0.pdf Size:2917K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS™ CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. drain pin 2 Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss gate • Very high commutation ruggedness pin 1 • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen fre

4.5. ipa50r140cp_rev2.1.pdf Size:604K _infineon

IPA50R140CP CoolMOSTM Power Transistor Product Summary Features V @Tjmax 550 V !0 W 4EHB:M?:; 8;IJ / ?D 1, DS(on) R 0.140 DS(on) max W )EM;IJ 7H=; W "NJH;C; :L :J H7J;: W %?=> F;7A 9KHH;DJ 97F78?B?JO 1, #- W -8 ?D= 0* -0 ;HM?I; IF;9?; ;D;H=O I?D=B; FKBI; 616 m AS D DD 2) ) E I V 3 0.9 L7B7D9>; ;D;H=O H;F;J?J?L; t A D DD A 2) ) I 9. L7B7D9>; 9KHH;DJ H;F;J?J?L; t A A A V 3 * , 0#"1 :v /dt HK==;:D;II :v /dt 50 V/ns

4.6. ipa50r250cp_rev2.0.pdf Size:551K _infineon

IPA50R250CP C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V "1 X *FNLI< F= D8K< :?8I>< 27 nC g typ X #OKI? G<8B :LII 0 F&1 :FDGC@8EK 2- $. X / L8Ci=@<; 8::FI;@E> KF (#"#!0) ;;8"#& $ 5> 01>53:10 2;= X &8I; 1F=KJN@K:?@E> 1+ .1 KFGFCF>@ 8K [! LECP J@E>C< GLCJ< 4 45 m AS D DD 2) ) 4 0.52 M8C8E:?< P I><;E< static ±20 V GS ! = &Q ± 0 [! .FN

4.7. ipa50r199cp_rev2.0.pdf Size:560K _infineon

IPA50R199CP C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 W )EM;IJ 7H=; 4 nC g typ W "NJH;C; :L :J H7J;: W %?=> F;7A 9KHH;DJ 97F78?B?JO W -8 01>53:10 2;= W %7H: 7D: IE?D= 0* -0 JEFEBE=?;I W * -# 7J Z KDB;II EJ>;HM?I; IF;9?; ;D;H=O I?D=B; FKBI; 4 6 m AS D DD 2) ) 3 0.66 L7B7D9>; ;D;H=O H;F;J?J?L; t A D DD A 2) ) 6.6 L7B7D9>; 9KHH;DJ H;F;J?J?L; t A A A * , 0#"1 :v /dt HK==;:D;II :v /dt 3 50 V/ns DS $7J; IEKH9; LEBJ7=; static ±20 V GS < %P ± 0 Z

See also transistors datasheet: IPA180N10N3G , IPA50R140CP , IPA50R199CP , IPA50R250CP , IPA50R299CP , IPA50R350CP , IPA50R380CE , IPA50R399CP , 2SJ201 , IPA60R099C6 , IPA60R125C6 , IPA60R125CP , IPA60R160C6 , IPA60R165CP , IPA60R190C6 , IPA60R190E6 , IPA60R199CP .

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