All MOSFET. IPA90R1K2C3 Datasheet

 

IPA90R1K2C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPA90R1K2C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 30 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 3.1 A

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO220FP

IPA90R1K2C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPA90R1K2C3 PDF doc:

1.1. ipa90r1k2c3_1.0.pdf Size:335K _infineon

IPA90R1K2C3
IPA90R1K2C3

IPA90R1K2C3 CoolMOS™ Power Transistor Product Summary Features V @ T =25°C 900 V DS J • Lowest figure-of-merit RON x Qg R @T =25°C 1.2 ? DS(on),max J • Extreme dv/dt rated Q 28 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO220 FP • Ultra low gate charge CoolMOS™ 900V is designed for: •

2.1. ipa90r1k0c3_1.0.pdf Size:731K _infineon

IPA90R1K2C3
IPA90R1K2C3

IPA90R1K0C3 C??IMOS $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features @ =25°C 900 V !0 U )DL:HI ;>I / M . ON g X 1.0 W DS(on) max U "MIG:B: 9K 9I G6I:9 4 nC g typ U %><= E:6@ 8JGG:CI 86E67>A>IN U . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" U -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI U 2 AIG6 ADL <6I: 8=6G<: -$ 1, #- ;;8"#&E ) 5> 01>53:10 2;= U . J6H> / :

4.1. ipa90r800c3_1.0.pdf Size:266K _infineon

IPA90R1K2C3
IPA90R1K2C3

IPA90R800C3 CoolMOS™ Power Transistor Product Summary Features V @ T =25°C 900 V DS J • Lowest figure-of-merit RON x Qg R @ T = 25°C 0.8 ? DS(on),max J • Extreme dv/dt rated Q 42 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO220 FP • Ultra low gate charge CoolMOS™ 900V is designed for:

4.2. ipa90r340c3_1.0.pdf Size:267K _infineon

IPA90R1K2C3
IPA90R1K2C3

IPA90R340C3 CoolMOS™ Power Transistor Product Summary Features V @ T =25°C 900 V DS J • Lowest figure-of-merit RON x Qg R @ T = 25°C 0.34 ? DS(on),max J • Extreme dv/dt rated Q 94 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R in TO220 Fullpak PG-TO220 FP DS,on • Ultra low

4.3. ipa90r500c3_1.0.pdf Size:365K _infineon

IPA90R1K2C3
IPA90R1K2C3

IPA90R500C3 CoolMOS™ Power Transistor Product Summary Features V @ T =25°C 900 V DS J • Lowest figure-of-merit RON x Qg R @ T = 25°C 0.5 ? DS(on),max J • Extreme dv/dt rated Q 68 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO220 FP • Ultra low gate charge CoolMOS™ 900V is designed for:

Datasheet: IPA65R280C6 , IPA65R280E6 , IPA65R380C6 , IPA65R380E6 , IPA65R600C6 , IPA65R600E6 , IPA65R660CFD , IPA90R1K0C3 , IRF150 , IPA90R340C3 , IPA90R500C3 , IPA90R800C3 , IPB100N04S2-04 , IPB100N04S2L-03 , IPB100N04S3-03 , IPB100N06S2-05 , IPB100N06S2L-05 .

 


IPA90R1K2C3
  IPA90R1K2C3
  IPA90R1K2C3
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IPA90R1K2C3
  IPA90R1K2C3
  IPA90R1K2C3
  IPA90R1K2C3
 

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