IPB180N06S4-H1 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPB180N06S4-H1

Type of IPB180N06S4-H1 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 250

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 180

Maximum junction temperature (Tj), °C:

Rise Time of IPB180N06S4-H1 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0017

Package: PGTO26373

Equivalent transistors for IPB180N06S4-H1

IPB180N06S4-H1 PDF doc:

1.1. ipb180n06s4-h1_ds_10.pdf Size:176K _infineon

IPB180N06S4-H1 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 1.7 m? DS(on),max I 180 A D Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon • Ultra high ID Type Package Marking IPB180N06S4-H1 PG-TO263-7-3 4N06H1 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 180 A Continuous drain current1) D C GS T =100°C, V =10V2) 180 C GS I T =25°C 720 Pulsed drain current2) D,pulse C I =90A 700 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 180 A AS V - Gate source voltage ±20 V GS P T =25°C Power dissipation 250 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-03-25 IPB180N06S4-H1 Paramet

2.1. ipb180n04s4-00_ds_1_0.pdf Size:162K _infineon

IPB180N04S4-00 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 0.98 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25°C, V =10V1) 180 A D C GS T =100 °C, C 180 V =10 V2) GS I T =25 °C 720 Pulsed drain current2) D,pulse C I =90 A 1250 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 180 A AS V - Gate source voltage ±20 V GS P T =25 °C Power dissipation 300 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-04-06 IPB180N04S4-00 Parameter Symbol Co

2.2. ipb180n04s3-02_ds_1_0.pdf Size:183K _infineon

IPB180N04S3-02 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 1.5 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Marking Package IPB180N04S3-02 PG-TO263-7-3 3QN0402 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 180 A Continuous drain current1) D C GS T =100 °C, C 180 V =10 V2) GS I T =25 °C 720 Pulsed drain current2) D,pulse C E I =80 A Avalanche energy, single pulse 1880 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2007-04-16  IPB180N04S3-02 Parameter Symbol Conditions Values Unit min. typ. max. Th

2.3. ipb180n03s4l-01_ds_1_0.pdf Size:161K _infineon

IPB180N03S4L-01 OptiMOS™-T2 Power-Transistor Product Summary V 30 V DS R 1.05 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N03S4L-01 PG-TO263-7-3 4N03L01 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25°C, V =10V1) 180 A D C GS T =100 °C, C 180 V =10 V2) GS I T =25 °C 720 Pulsed drain current2) D,pulse C I =90 A 530 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 180 A AS V - Gate source voltage ±16 V GS P T =25 °C Power dissipation 188 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-12-03 IPB180N03S4L-01 Parameter Symbol

2.4. ipb180n04s4-h0_ds_1_0.pdf Size:162K _infineon

IPB180N04S4-H0 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 1.1 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25°C, V =10V1) 180 A D C GS T =100 °C, C 180 V =10 V2) GS I T =25 °C 720 Pulsed drain current2) D,pulse C E I =90 A Avalanche energy, single pulse 850 mJ AS D I Avalanche current, single pulse - 180 A AS V - Gate source voltage ±20 V GS P T =25 °C Power dissipation 250 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-04-13 IPB180N04S4-H0 Parameter Symbol Condit

2.5. ipb180n03s4l-h0_ds_1_0.pdf Size:161K _infineon

IPB180N03S4L-H0 OptiMOS™-T2 Power-Transistor Product Summary V 30 V DS R 0.95 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N03LH0 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25°C, V =10V1) 180 A D C GS T =100 °C, C 180 V =10 V2) GS I T =25 °C 720 Pulsed drain current2) D,pulse C I =90 A 980 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 180 A AS V - Gate source voltage ±16 V GS P T =25 °C Power dissipation 250 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-12-03 IPB180N03S4L-H0 Parameter Symbol

2.6. ipb180n04s4-01_ds_1_0.pdf Size:162K _infineon

IPB180N04S4-01 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 1.3 m? DS(on) I 180 A D Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N04S4-01 PG-TO263-7-3 4N0401 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25°C, V =10V1) 180 A D C GS T =100 °C, C 180 V =10 V2) GS I T =25 °C 720 Pulsed drain current2) D,pulse C E I =90 A Avalanche energy, single pulse 550 mJ AS D I Avalanche current, single pulse - 180 A AS V - Gate source voltage ±20 V GS P T =25 °C Power dissipation 188 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-04-13 IPB180N04S4-01 Parameter Symbol Condit

See also transistors datasheet: IPB120N04S3-02 , IPB120N06S4-03 , IPB160N04S2-03 , IPB160N04S2L-03 , IPB160N04S3-H2 , IPB180N03S4L-H0 , IPB180N04S3-02 , IPB180N04S4-00 , IRF9540 , IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 , IPB70N04S3-07 .

Keywords