IPB45P03P4L-11 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPB45P03P4L-11

Type of IPB45P03P4L-11 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 58

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 45

Maximum junction temperature (Tj), °C:

Rise Time of IPB45P03P4L-11 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0108

Package: PGTO26332

Equivalent transistors for IPB45P03P4L-11

IPB45P03P4L-11 PDF documents for downloads:

5.1. ipp45n04s4l-08_ipb45n04s4l-08_ipi45n04s4l-08.pdf Size:159K _infineon

IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 7.6 m? DS(on),max I 45 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB45N04S4L-08 PG-TO263-3-2 4N04L08 IPI45N04S4L-08 PG-TO262-3-1 4N04L08 IPP45N04S4L-08 PG-TO220-3-1 4N04L08 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 45 A Continuous drain current1) D C GS T =100°C, V =10V2) 42 C GS I T =25°C 180 Pulsed drain current2) D,pulse C I =22A 55 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 45 A AS V - Gate source voltage +20/-16 V GS P T =25°C Power dissipation 45 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg

5.2. ipp45n06s4l_ipb45n06s4l_ipi45n06s4l-08.pdf Size:170K _infineon

IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.9 m? DS(on),max I 45 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB45N06S4L-08 PG-TO263-3-2 4N06L08 IPI45N06S4L-08 PG-TO262-3-1 4N06L08 IPP45N06S4L-08 PG-TO220-3-1 4N06L08 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 45 A Continuous drain current1) D C GS T =100°C, V =10V2) 45 C GS I T =25°C 180 Pulsed drain current2) D,pulse C I =22.5A 97 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 45 A AS V - Gate source voltage ±16 V GS P T =25°C Power dissipation 71 W tot C T , T - Operating and storage temperature -55 ... +175 °C j

See also transistors datasheet: IPB160N04S3-H2 , IPB180N03S4L-H0 , IPB180N04S3-02 , IPB180N04S4-00 , IPB180N06S4-H1 , IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IRF150 , IPB47N10S-33 , IPB47N10SL-26 , IPB50N10S3L-16 , IPB70N04S3-07 , IPB70N10S3-12 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 .

Keywords