IPB50N10S3L-16 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPB50N10S3L-16

Type of IPB50N10S3L-16 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 70

Maximum junction temperature (Tj), °C:

Rise Time of IPB50N10S3L-16 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0154

Package: PGTO26332

Equivalent transistors for IPB50N10S3L-16

IPB50N10S3L-16 PDF documents for downloads:

1.1. ipp50n10s3l_ipb50n10s3l_ipi50n10s3l-16.pdf Size:186K _infineon

IPB50N10S3L-16 IPI50N10S3L-16, IPP50N10S3L-16 OptiMOS®-T Power-Transistor Product Summary V 100 V DS R (SMD version) 15.4 m? DS(on),max I 50 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB50N10S3L-16 PG-TO263-3-2 3N10L16 IPI50N10S3L-16 PG-TO262-3-1 3N10L16 IPP50N10S3L-16 PG-TO220-3-1 3N10L16 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V Continuous drain current 50 A D C GS T =100 °C, C 37 V =10 V1) GS I T =25 °C 200 Pulsed drain current1) D,pulse C I =25A 330 mJ Avalanche energy, single pulse1) E AS D I Avalanche current, single pulse 50 A AS V ±20 V Gate source voltage2) GS P T =25 °C Power dissipation 100 W tot C T , T Operating and storage temperature -55

5.1. ipb50r140cp_rev2.0.pdf Size:555K _infineon

IPB50R140CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,LI< F= D8K< :?8I>< 48 nC g typ X #OKI? G<8B :LII 0 F&1 :FDGC@8EK PG?TO26 X / L8@C=@<; 8::FI;@E> KF (#"#!1) ::7!"% # 4= /0=4290/ 1:< X &8I; JF=K JN@K:?@E> 1+ .1 KFGFCF>@492= 8K [! LECP J@E>C< GLCJ< 616 m AS D DD 2) ) 4 0.9 M8C8E:?< P I><;E< static ±20 V GS ! = &Q ± 0 [! .FN

5.2. ipb50r250cp_rev2.0.pdf Size:552K _infineon

IPB50R250CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,KH< F= D8J< :?8H>< 27 nC g typ W #NJH? G<8B :KHH 0 F&1 :FDGC@8EJ PG?TO26 W / K8Ci=@<; 8::FH;@E> JF (#"#!1) ::7!"% # 4= /0=4290/ 1:< W &8H; IF=J IM@J:?@E> 1+ .1 JFGFCF>@492= 8J Z! KECO I@E>C< GKCI< 45 m AS D DD 2) ) 4 0.52 L8C8E:?< O H><;E< static ±20 V GS ! = &P ± 0 Z! .FM

5.3. ipb50r199cp_rev2.0.pdf Size:554K _infineon

IPB50R199CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,KH< F= D8J< :?8H>< 4 nC g typ W #NJH? G<8B :KHH 0 F&1 :FDGC@8EJ PG?TO26 W / K8Ci=@<; 8::FH;@E> JF (#"#!1) ::7!"% # 4= /0=4290/ 1:< W &8H; IF=J IM@J:?@E> 1+ .1 JFGFCF>@492= 8J Z! KECO I@E>C< GKCI< 4 6 m AS D DD 2) ) 4 0.66 L8C8E:?< O H><;E< static ±20 V GS ! = &P ± 0 Z!

5.4. ipb50r299cp_rev2.1.pdf Size:559K _infineon

IPB50R299CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,7G=; 2 nC g typ V #MIG;C; :K :I G7I;: V &?=> F;7A 9JGG;DI 97F78?B?IN V .8 ?D= 1+ .1 IEFEBE=?;H V !!+ .$! 492= 7I Y! JDB;HH EI>;GL?H; HF;9?; ;D;G=N H?D=B; FJBH; 289 m AS D DD 2) ) 4 0.44 K7B7D9>; ;D;G=N G;F;I?I?K; t A D DD A 2) ) 4.4 K7B7D9>; 9JGG;DI G;F;I?I?K; t A A A 4 + - 1$#2 :v /dt GJ==;:D;HH :v /dt 50 V/ns DS %7I; HEJG9; KEBI7=; static ±

See also transistors datasheet: IPB180N04S4-00 , IPB180N06S4-H1 , IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 , BF980 , IPB70N04S3-07 , IPB70N10S3-12 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 , IPB80N03S4L-02 , IPB80N03S4L-03 , IPB80N04S2-04 .

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