IPB80N04S3-06 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPB80N04S3-06

Type of IPB80N04S3-06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 40V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPB80N04S3-06 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0054

Package: PGTO26332

Equivalent transistors for IPB80N04S3-06

IPB80N04S3-06 PDF documents for downloads:

1.1. ipp80n04s3_ipb80n04s3_ipi80n04s3-04.pdf Size:187K _infineon

IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80N04S3-04 PG-TO263-3-2 3N0404 IPI80N04S3-04 PG-TO262-3-1 3N0404 IPP80N04S3-04 PG-TO220-3-1 3N0404 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C E I =80 A Avalanche energy, single pulse 290 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 136 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/

1.2. ipp80n04s2-04_ipb80n04s2-04_ipi80n04s2-04_green.pdf Size:159K _infineon

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel - Enhancement mode R (SMD version) 3.4 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N04S2-04 PG-TO263-3-2 SP0002-18154 2N0404 IPP80N04S2-04 PG-TO220-3-1 SP0002-19054 2N0404 IPI80N04S2-04 PG-TO262-3-1 SP0002-19058 2N0404 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I =80A 810 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage tem

1.3. ipp80n04s4-04_ipb80n04s4-04_ipi80n04s4-04.pdf Size:160K _infineon

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80N04S4-04 PG-TO263-3-2 4N0404 IPI80N04S4-04 PG-TO262-3-1 4N0404 IPP80N04S4-04 PG-TO220-3-1 4N0404 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 80 A Continuous drain current1) D C GS T =100°C, V =10V2) 80 C GS I T =25°C 320 Pulsed drain current2) D,pulse C I =40A 100 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 80 A AS V - Gate source voltage ±20 V GS P T =25°C Power dissipation 71 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climat

1.4. ipp80n04s4l-04_ipb80n04s4l-04_ipi80n04s4l-04.pdf Size:159K _infineon

IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80N04S4L-04 PG-TO263-3-2 4N04L04 IPI80N04S4L-04 PG-TO262-3-1 4N04L04 IPP80N04S4L-04 PG-TO220-3-1 4N04L04 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 80 A Continuous drain current1) D C GS T =100°C, V =10V2) 80 C GS I T =25°C 320 Pulsed drain current2) D,pulse C I =40A 100 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 80 A AS V - Gate source voltage +20/-16 V GS P T =25°C Power dissipation 71 W tot C T , T - Operating and storage temperature -55 ... +175 °C j st

1.5. ipp80n04s2l-03_ipb80n04s2l-03_green.pdf Size:153K _infineon

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N04S2L-03 PG-TO263-3-2 SP0002-20158 2N04L03 IPP80N04S2L-03 PG-TO220-3-1 SP0002-19063 2N04L03 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I =80A 810 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2006-03-0

1.6. ipp80n04s3_ipb80n04s3_ipi80n04s3.pdf Size:188K _infineon

IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80N04S3-06 PG-TO263-3-2 3N0406 IPI80N04S3-06 PG-TO262-3-1 3N0406 IPP80N04S3-06 PG-TO220-3-1 3N0406 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25°C, V =10V1) 80 A D C GS T =100 °C, C 71 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C E I =80 A Avalanche energy, single pulse 125 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 100 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/

1.7. ipp80n04s2_ipb80n04s2_ipi80n04s2-h4.pdf Size:190K _infineon

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS® Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compliant) Type Package Marking IPB80N04S2-H4 PG-TO263-3-2 2N04H4 IPP80N04S2-H4 PG-TO220-3-1 2N04H4 IPI80N04S2-0H4 PG-TO262-3-1 2N04H4 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C E I =80A Avalanche energy, single pulse 660 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic categ

1.8. ipp80n04s4-03_ipb80n04s4-03_ipi80n04s4-03.pdf Size:158K _infineon

IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80N04S4-03 PG-TO263-3-2 4N0403 IPI80N04S4-03 PG-TO262-3-1 4N0403 IPP80N04S4-03 PG-TO220-3-1 4N0403 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 80 A Continuous drain current1) D C GS T =100°C, V =10V2) 80 C GS I T =25°C 320 Pulsed drain current2) D,pulse C I =40A 200 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 80 A AS V - Gate source voltage ±20 V GS P T =25°C Power dissipation 94 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climat

See also transistors datasheet: IPB77N06S2-12 , IPB80N03S4L-02 , IPB80N03S4L-03 , IPB80N04S2-04 , IPB80N04S2-H4 , IPB80N04S2L-03 , IPB80N04S3-03 , IPB80N04S3-04 , 3SK45 , IPB80N04S3-H4 , IPB80N04S4-04 , IPB80N04S4L-04 , IPB80N06S2-05 , IPB80N06S2-07 , IPB80N06S2-08 , IPB80N06S2-09 , IPB80N06S2-H5 .

Keywords