IPB80N06S2L-11 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPB80N06S2L-11

Type of IPB80N06S2L-11 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 158

Maximum drain-source voltage |Uds|, V: 55V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPB80N06S2L-11 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0107

Package: PGTO26332

Equivalent transistors for IPB80N06S2L-11

IPB80N06S2L-11 PDF documents for downloads:

1.1. ipp80n06s2l-11_ipb80n06s2l-11_ipi80n06s2l-11.pdf Size:132K _infineon

IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 10.7 mW DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2L-11 PG-TO263-3-2 SP0002-18177 2N06L11 IPP80N06S2L-11 PG-TO220-3-1 SP0002-18175 2N06L11 IPI80N06S2L-11 PG-TO262-3-1 SP0002-18176 2N06L11 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 58 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I =80A 280 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 158 W tot C T , T Oper

1.2. ipp80n06s2-h5_ipb80n06s2-h5_green.pdf Size:155K _infineon

IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 5.2 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2-H5 PG-TO263-3-2 SP0002-18162 2N06H5 IPP80N06S2-H5 PG-TO220-3-1 SP0002-18155 2N06H5 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 700 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/17

1.3. ipp80n06s2l-h5_ipb80n06s2l-h5_green.pdf Size:155K _infineon

IPB80N06S2L-H5 IPP80N06S2L-H5 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 4.7 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2L-H5 PG-TO263-3-2 SP0002-19068 2N06LH5 IPP80N06S2L-H5 PG-TO220-3-1 SP0002-19067 2N06LH5 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 700 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2005-12

1.4. ipp80n06s2-08_ipb80n06s2-08_ipi80n06s2-08_green.pdf Size:158K _infineon

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 7.7 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2-08 PG-TO263-3-2 SP0002-18830 2N0608 IPP80N06S2-08 PG-TO220-3-1 SP0002-18826 2N0608 IPI80N06S2-08 PG-TO262-3-1 SP0002-18828 2N0608 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 450 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 215 W tot C T , T Operating and storage t

1.5. ipp80n06s2l-05_ipb80n06s2l-05_ipi80n06s2l-05_green.pdf Size:158K _infineon

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2L-05 PG-TO263-3-2 SP0002-19004 2N06L05 IPP80N06S2L-05 PG-TO220-3-1 SP0002-19000 2N06L05 IPI80N06S2L-05 PG-TO262-3-1 SP0002-19002 2N06L05 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 800 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Op

1.6. ipp80n06s2-05_ipb80n06s2-05_green.pdf Size:155K _infineon

IPB80N06S2-05 IPP80N06S2-05 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 4.8 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2-05 PG-TO263-3-2 SP0002-18877 2N0605 IPP80N06S2-05 PG-TO220-3-1 SP0002-18873 2N0605 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 810 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/17

1.7. ipp80n06s4l_ipb80n06s4l_ipi80n06s4l-07.pdf Size:170K _infineon

IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 6.4 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80N06S4L-07 PG-TO263-3-2 4N06L07 IPI80N06S4L-07 PG-TO262-3-1 4N06L07 IPP80N06S4L-07 PG-TO220-3-1 4N06L07 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 80 A Continuous drain current1) D C GS T =100°C, V =10V2) 58 C GS I T =25°C 320 Pulsed drain current2) D,pulse C I =40A 71 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 80 A AS V - Gate source voltage ±16 V GS P T =25°C Power dissipation 79 W tot C T , T - Operating and storage temperature -55 ... +175 °C j st

1.8. ipp80n06s4_ipb80n06s4_ipi80n06s4-05.pdf Size:170K _infineon

IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB80N06S4-05 PG-TO263-3-2 4N0605 IPI80N06S4-05 PG-TO262-3-1 4N0605 IPP80N06S4-05 PG-TO220-3-1 4N0605 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25°C, V =10V1) 80 A D C GS T =100°C, V =10V2) 75 C GS I T =25°C 320 Pulsed drain current2) D,pulse C I =40A 152 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 80 A AS V - Gate source voltage ±20 V GS P T =25°C Power dissipation 107 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC

1.9. ipp80n06s2l-09_ipb80n06s2l-09_green.pdf Size:155K _infineon

IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 8.3 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2L-09 PG-TO263-3-2 SP0002-18743 2N06L09 IPP80N06S2L-09 PG-TO220-3-1 SP0002-18742 2N06L09 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 73 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 370 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 190 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2006-03

1.10. ipp80n06s2l-07_ipb80n06s2l-07_green.pdf Size:155K _infineon

IPB80N06S2L-07 IPP80N06S2L-07 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 6.7 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2L-07 PG-TO263-3-2 SP0002-18867 2N06L07 IPP80N06S2L-07 PG-TO220-3-1 SP0002-18831 2N06L07 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 450 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 210 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2005-12

1.11. ipp80n06s2-07_ipb80n06s2-07_ipi80n06s2-07_green.pdf Size:158K _infineon

IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 6.3 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2-07 PG-TO263-3-2 SP0002-18818 2N0607 IPP80N06S2-07 PG-TO220-3-1 SP0002-18810 2N0607 IPI80N06S2-07 PG-TO262-3-1 SP0002-18817 2N0607 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 530 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 250 W tot C T , T Operating and storage t

1.12. ipp80n06s2-09_ipb80n06s2-09_green.pdf Size:155K _infineon

IPB80N06S2-09 IPP80N06S2-09 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 8.8 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2-09 PG-TO263-3-2 SP0002-18741 2N0609 IPP80N06S2-09 PG-TO220-3-1 SP0002-18740 2N0609 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 370 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 190 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/17

1.13. ipp80n06s2l-06_ipb80n06s2l-06_green.pdf Size:155K _infineon

IPB80N06S2L-06 IPP80N06S2L-06 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 6.3 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB80N06S2L-06 PG-TO263-3-2 SP0002-18163 2N06L06 IPP80N06S2L-06 PG-TO220-3-1 SP0002-18824 2N06L06 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 80 A Continuous drain current1) D C GS T =100 °C, C 80 V =10 V2) GS I T =25 °C 320 Pulsed drain current2) D,pulse C I = 80 A 530 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 250 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2006-03

See also transistors datasheet: IPB80N06S2-07 , IPB80N06S2-08 , IPB80N06S2-09 , IPB80N06S2-H5 , IPB80N06S2L-05 , IPB80N06S2L-06 , IPB80N06S2L-07 , IPB80N06S2L-09 , IRF9530 , IPB80N06S2L-H5 , IPB80N06S4-05 , IPB80N06S4-07 , IPB80N06S4L-05 , IPB80N06S4L-07 , IPB80N08S2-07 , IPB80N08S2L-07 , IPB80P03P4-05 .

Keywords