IPB65R380C6 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPB65R380C6

Type of IPB65R380C6 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 650V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10.6

Maximum junction temperature (Tj), °C:

Rise Time of IPB65R380C6 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.38

Package: D2PAK_(TO263)

Equivalent transistors for IPB65R380C6

IPB65R380C6 PDF documents for downloads:

1.1. ipb65r380c6_2_0.pdf Size:2146K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F>;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R380C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y ! K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features drain X #PLJ=E =DQ DGO DGKK=K A=< .: >J== HD9LAF? &9DG?=F >J==2) s?urce App

4.1. ipb65r280c6_2_0.pdf Size:2104K _infineon

MOSFET + P =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@ 1( + - 1$#2 JLGGC@? :C8JJ @EEFM8K@FE 2?< F== 1( + - 1$#2 N?@C< EFK J8:I@=@:@E> <8J< F= LJ< #OKI 8E; :FE;L:K@FE CFJJ 8GGC@:8K@FEJ ?K? :FDDLK8K@FE IL>><;E7< W #8JP KF LJ< ;I@M< • EDEC1) HL8C@=@<; .9 =I<< GC8K@E> &8CF>7< >>:71/A7=<@ Adapter s

4.2. ipw65r660cfd_ipb65r660cfd_ipi65r660cfd_ipa65r660cfd_ipp65r660cfd_ipd65r660cfd.pdf Size:4455K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CFD2 650V 650V CoolMOS™ CFD2 Power Transistor IPx65R660CFD Data Sheet Rev. 2.4 Final Industrial & Multimarket 650V CoolMOS™ CFD2 Power Transistor IPW65R660CFD, IPB65R660CFD, IPP65R660CFD IPA65R660CFD, IPD65R660CFD, IPI65R660CFD TO-247 D?PAK TO-220 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast TO-220 FP DPAK I?PAK switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler. drain

4.3. ipb65r600c6_ipa65r600c6_ipp65r600c6_ipd65r600c6_ipi65r600c6.pdf Size:2092K _infineon

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'F>;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C6 1 Descripti?n !GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2=;@FGDG?A=K !GGD+ - 1Y ! K=JA=K ;GE :AF=K L@= =PH=JA=F;= G> L@= D=9ALK G> 9 >9KL KOAL;@AF? 1( + - 1$#2 O@AD= FGL K9;JA>A;AF? =9K= G> MK= #PLJ=E =DQ DGO KOAL;@AF? 9F< ;GF>A;A=FL E GJ= ;GE H9;L DA?@L=J 9F< ;GGD=J Features drain X #PLJ=E =DQ DGO DGKK=K A=< .: >J== HD9LAF? &9DG?=F >J==2) s?urce App

4.4. ipb65r280e6_2_0.pdf Size:2033K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R280E6 Data Sheet Rev. 2.0, 2010-04-26 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor IPA65R280E6, IPB65R280E6 IPI65R280E6, IPP65R280E6 IPW65R280E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss drain • Very high commutation ruggedness pin 2 • Easy to use/drive • JEDEC1) qualified, Pb-free plating,

See also transistors datasheet: IPB60R380C6 , IPB60R385CP , IPB60R520CP , IPB60R600C6 , IPB60R600CP , IPB60R950C6 , IPB65R280C6 , IPB65R280E6 , 75339P , IPB65R600C6 , IPB65R660CFD , IPB70N04S4-06 , IPB79CN10NG , IPB80N04S4-03 , IPD100N04S4-02 , IPD100N06S4-03 , IPD14N06S2-80 .

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