IPD30N08S2L-21 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPD30N08S2L-21

Type of IPD30N08S2L-21 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 136

Maximum drain-source voltage |Uds|, V: 75V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), °C:

Rise Time of IPD30N08S2L-21 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0205

Package: PTO252311

Equivalent transistors for IPD30N08S2L-21

IPD30N08S2L-21 PDF documents for downloads:

1.1. ipd30n08s2-22_green.pdf Size:151K _infineon

IPD30N08S2-22 OptiMOS® Power-Transistor Product Summary Features V 75 V DS • N-channel - Enhancement mode R 21.5 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N08S2-22 PG-TO252-3-11 2N0822 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 °C, V =10 V1) 30 A D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I =30A Avalanche energy, single pulse 240 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 136 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N08S2-22 Parameter Symbol Conditions Values Unit min. typ. max. Thermal cha

1.2. ipd30n08s2l-21_green.pdf Size:150K _infineon

IPD30N08S2L-21 OptiMOS® Power-Transistor Product Summary Features V 75 V DS • N-channel Logic Level - Enhancement mode R 20.5 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N08S2L-21 PG-TO252-3-11 2N08L21 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 °C, V =10 V1) 30 A D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I =30A Avalanche energy, single pulse 240 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 136 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N08S2L-21 Parameter Symbol Conditions Values Unit min. typ. m

3.1. ipd30n06s4l-23_ds_10.pdf Size:162K _infineon

IPD30N06S4L-23 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 23 m? DS(on),max I 30 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD30N06S4L-23 PG-TO252-3-11 4N06L23 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V Continuous drain current 30 A D C GS T =100°C, V =10V1) 21 C GS I T =25°C 120 Pulsed drain current1) D,pulse C I =15A 18 mJ Avalanche energy, single pulse1) E AS D I Avalanche current, single pulse - 30 A AS V - Gate source voltage ±16 V GS P T =25°C Power dissipation 36 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 - Rev. 1.0 page 1 2009-03-23 IPD30N06S4L-23 Parameter Symbol Conditions Values Unit min. t

3.2. ipd30n06s2-23_green.pdf Size:149K _infineon

IPD30N06S2-23 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 23 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N06S2-23 PG-TO252-3-11 2N0623 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 30 A Continuous drain current1) D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I =30A Avalanche energy, single pulse 150 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 100 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N06S2-23 Parameter Symbol Conditions Values Unit min. typ. max.

3.3. ipd30n03s2l-10_green.pdf Size:151K _infineon

IPD30N03S2L-10 OptiMOS® Power-Transistor Product Summary Features V 30 V DS • N-channel Logic Level - Enhancement mode R 10 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N03S2L-10 PG-TO252-3-11 2N03L10 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 30 A Continuous drain current1) D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I =30A Avalanche energy, single pulse 150 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 100 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N03S2L-10 Parameter Symbol Conditions Values Unit min. typ. max.

3.4. ipd30n06s2l-23_green.pdf Size:148K _infineon

IPD30N06S2L-23 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 23 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N06S2L-23 PG-TO252-3-11 2N06L23 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 30 A Continuous drain current1) D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I =30A Avalanche energy, single pulse 150 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 100 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N06S2L-23 Parameter Symbol Conditions Values Unit

3.5. ipd30n03s4l-14_ds_2_1.pdf Size:184K _infineon

IPD30N03S4L-14 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 13.6 m? DS(on),max I 30 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N03S4L-14 PG-TO252-3-11 4N03L14 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 30 A Continuous drain current1) D C GS T =100 °C, C 27 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I =30 A Avalanche energy, single pulse 16 mJ AS D I T =25 °C Avalanche current, single pulse 30 A AS C V Gate source voltage ±16 V GS P T =25 °C Power dissipation 31 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 2.1 page 1 2008-04-18 IPD30N03S4L-14 Par

3.6. ipd30n03s4l-09_ds_1_1.pdf Size:173K _infineon

IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 9.0 mW DS(on),max I 30 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD30N03S4L-09 PG-TO252-3-11 4N03L09 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 30 A Continuous drain current1) D C GS T =100°C, V =10V2) 30 C GS I T =25°C 120 Pulsed drain current2) D,pulse C I =30A 28 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 30 A AS V - Gate source voltage ±16 V GS P T =25°C Power dissipation 42 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 - Rev. 1.1 page 1 2010-10-05 IPD30N03S4L-09 Parameter Symbol Conditions Value

3.7. ipd30n06s2-15_green.pdf Size:149K _infineon

IPD30N06S2-15 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 14.7 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N06S2-15 PG-TO252-3-11 2N0615 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 30 A Continuous drain current1) D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I = Avalanche energy, single pulse 240 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 136 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N06S2-15 Parameter Symbol Conditions Values Unit min. typ. max. T

3.8. ipd30n06s2l-13_green.pdf Size:148K _infineon

IPD30N06S2L-13 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 13 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N06S2L-13 PG-TO252-3-11 2N06L13 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 30 A Continuous drain current1) D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 200 Pulsed drain current2) D,pulse C E I =30A Avalanche energy, single pulse 240 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 136 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N06S2L-13 Parameter Symbol Conditions Values Unit

3.9. ipd30n03s2l-20_green.pdf Size:152K _infineon

IPD30N03S2L-20 OptiMOS® Power-Transistor Product Summary Features V 30 V DS • N-channel Logic Level - Enhancement mode R 20 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N03S2L-20 PG-TO252-3-11 2N03L20 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 30 A Continuous drain current1) D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I =30A Avalanche energy, single pulse 70 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 60 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N03S2L-20 Parameter Symbol Conditions Values Unit min. typ. max.

3.10. ipd30n03s2l-07_green.pdf Size:151K _infineon

IPD30N03S2L-07 OptiMOS® Power-Transistor Product Summary Features V 30 V DS • N-channel Logic Level - Enhancement mode R 6.7 m? DS(on),max • Automotive AEC Q101 qualified I 30 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD30N03S2L-07 PG-TO252-3-11 2N03L07 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 30 A Continuous drain current1) D C GS T =100 °C, C 30 V =10 V2) GS I T =25 °C 120 Pulsed drain current2) D,pulse C E I =30A Avalanche energy, single pulse 250 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 136 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18  IPD30N03S2L-07 Parameter Symbol Conditions Values Unit min. typ. max

See also transistors datasheet: IPD30N03S4L-09 , IPD30N03S4L-14 , IPD30N06S2-15 , IPD30N06S2-23 , IPD30N06S2L-13 , IPD30N06S2L-23 , IPD30N06S4L-23 , IPD30N08S2-22 , 2SK956 , IPD30N10S3L-34 , IPD35N10S3L-26 , IPD40N03S4L-08 , IPD50N03S2-07 , IPD50N03S2L-06 , IPD50N03S4L-06 , IPD50N04S3-08 , IPD50N04S3-09 .

Keywords