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IPD90N06S4L-06 MOSFET (IC) Datasheet. Cross Reference Search. IPD90N06S4L-06 Equivalent

Type Designator: IPD90N06S4L-06

Type of IPD90N06S4L-06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 79

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 90

Maximum junction temperature (Tj), °C:

Rise Time of IPD90N06S4L-06 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0063

Package: PGTO252

IPD90N06S4L-06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPD90N06S4L-06 PDF doc:

1.1. ipd90n06s4-05_ds_10.pdf Size:163K _infineon

IPD90N06S4L-06
IPD90N06S4L-06

IPD90N06S4-05 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 5.1 m? DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon Type Package Marking IPD90N04S6-05 PG-TO252-3-11 4N0605 Maximum rating

1.2. ipd90n06s4-07_ds_10.pdf Size:163K _infineon

IPD90N06S4L-06
IPD90N06S4L-06

IPD90N06S4-07 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 6.9 m? DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11 4N0607 Maximum rating

1.3. ipd90n06s4-04_ds_12.pdf Size:163K _infineon

IPD90N06S4L-06
IPD90N06S4L-06

IPD90N06S4-04 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 3.8 m? DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, at T =25 °C, unless o

1.4. ipd90n06s4l-03_ds_10.pdf Size:163K _infineon

IPD90N06S4L-06
IPD90N06S4L-06

IPD90N06S4L-03 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 3.5 m? DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon Type Package Marking IPD90N06S4L-03 PG-TO252-3-11 4N06L03

1.5. ipd90n06s4l-06_ds_10.pdf Size:163K _infineon

IPD90N06S4L-06
IPD90N06S4L-06

IPD90N06S4L-06 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 6.3 m? DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon Type Package Marking IPD90N06S4L-06 PG-TO252-3-11 4N06L06

1.6. ipd90n06s4l-05_ds_10.pdf Size:163K _infineon

IPD90N06S4L-06
IPD90N06S4L-06

IPD90N06S4L-05 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 4.6 m? DS(on),max I 90 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon Type Package Marking IPD90N06S4L-05 PG-TO252-3-11 4N06L05 Maximum rat

See also transistors datasheet: IPD90N04S3-H4 , IPD90N04S4-04 , IPD90N04S4L-04 , IPD90N06S4-04 , IPD90N06S4-05 , IPD90N06S4-07 , IPD90N06S4L-03 , IPD90N06S4L-05 , IRF9640 , IPD90P03P4-04 , IPD90P03P4L-04 , IPD031N03LG , IPD031N06L3G , IPD034N06N3G , IPD035N06L3G , IPD036N04LG , IPD038N04NG .

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