IPD127N06LG MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPD127N06LG

Type of IPD127N06LG transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 136

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 50

Maximum junction temperature (Tj), °C:

Rise Time of IPD127N06LG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0127

Package: DPAK_(TO252)

Equivalent transistors for IPD127N06LG

IPD127N06LG PDF documents for downloads:

1.1. ipd127n06lg_rev1.2.pdf Size:1000K _infineon

% # ! ® % (>.;?6?@<> %><1A0@ 'A::.>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> 1 7 mW D n) m x P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C G? O ? Type #* ( & ! Package G? O ? Marking 1 7N ".D6:A: >.@6;4? 1C S D><5BB ?C85AF9B5 B@5396954 j Parameter Symb?I C?nditi?ns VaIue Unit 1) ?>C9>D?DB 4A19> 3DAA5>C S D C S 4 C ) *D 3DAA5>C S D p l e C E1<1>385 5>5A7H B9>7<5 @D 1 t t C ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> % / C85 389@ 9B 12<5 C? 31AAH t C ) ,55 697DA5 + 5E 2 @175 8? 7?22  % # ! Parameter Symb?I C?nditi?ns VaIues Unit min. typ. max. (52>:.9 05.>.0@2>6?@60? -85A=1< A5B9BC1>35 :D>3C9?> 31B5 ? ? 1 1 t C ,

5.1. ipd122n10n3g_rev2.2.pdf Size:605K _infineon

IPD122N10N3 G TM 3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5< >?B=1< <5F5< R 1 m , ?> =1H Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) I Q .5BI B5C9CD1>35 R D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?> Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>38B?>?EC B53D96931D9?> Type #) ' ' ! Package G? O ? Marking 1 N1 N Maximum ratings, 1D T T E><5CC ?D85BG9C5 C@5396954 j Parameter Symbol Conditions Value Unit ) ?>D9>E?EC 4B19> 3EBB5>D I T T D C T T 4 C I T T )E 3EBB5>D ) D p l e C E F1<1>385 5>5B7I C9>7<5 @E 4 t t C T T ( @5B1D9>7 1>4 CD?B175 D5=@5B1DEB5 T j t # 3<9=1D93 31D57?BI #' # 1) $ ,- 1>4 $ , ) ,55 697EB5 + 5F @175 IPD122N10N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R -85B=1< B5C9C

See also transistors datasheet: IPD088N04LG , IPD088N06N3G , IPD090N03LG , IPD096N08N3G , IPD105N03LG , IPD105N04LG , IPD110N12N3G , IPD122N10N3G , IRL3103 , IPD12CN10NG , IPD135N03LG , IPD135N08N3G , IPD144N06NG , IPD160N04LG , IPD16CN10NG , IPD170N04NG , IPD180N10N3G .

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