IPD75N04S4-06 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPD75N04S4-06

Type of IPD75N04S4-06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 58

Maximum drain-source voltage |Uds|, V: 40V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C:

Rise Time of IPD75N04S4-06 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0059

Package: PGTO252311

Equivalent transistors for IPD75N04S4-06

IPD75N04S4-06 PDF documents for downloads:

1.1. ipd75n04s4-06_ds_1_1.pdf Size:154K _infineon

IPD75N04S4-06 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 5.9 m? DS(on),max I 75 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD75N04S4-06 PG-TO252-3-313 4N0406 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V Continuous drain current 75 A D C GS T =100°C, V =10V2) 53 C GS I T =25°C 300 Pulsed drain current1) D,pulse C I =35A 72 mJ Avalanche energy, single pulse1) E AS D I Avalanche current, single pulse - 75 A AS V - Gate source voltage ±20 V GS P T =25°C Power dissipation 58 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2010-07-15 IPD75N04S4-06 Parameter Symbol Conditions Values Unit min. typ. max.

See also transistors datasheet: IPD640N06LG , IPD64CN10NG , IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IRF9540 , IPD78CN10NG , IPD800N06NG , IPD90N04S4-02 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 .

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