IPG20N04S4L-08 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPG20N04S4L-08

Type of IPG20N04S4L-08 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 54

Maximum drain-source voltage |Uds|, V: 40V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 20

Maximum junction temperature (Tj), °C:

Rise Time of IPG20N04S4L-08 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0082

Package: PGTDSON84

Equivalent transistors for IPG20N04S4L-08

IPG20N04S4L-08 PDF documents for downloads:

1.1. ipg20n04s4l-11_ds_1_0.pdf Size:156K _infineon

IPG20N04S4L-11 OptiMOS™-T2 Power-Transistor Product Summary V 40 V DS 4) 11.6 mW R DS(on),max I 20 A D Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPG20N04S4L-11 PG-TDSON-8-4 4N04L11 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C, V =10 V1) 20 A D C GS one channel active T =100 °C, C 20 V =10 V2) GS Pulsed drain current2) I - 80 D,pulse one channel active I =10A 80 mJ Avalanche energy, single pulse2, 4) E AS D - 15 A Avalanche current, single pulse4) I AS V - Gate source voltage ±16 V GS Power dissipation P T =25 °C 41 W tot C one channel active T , T - Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2010-10-05 IPG20N04S4L-11 Parameter

1.2. ipg20n04s4-09_ds_1_0.pdf Size:141K _infineon

IPG20N04S4-09 OptiMOS™-T2 Power-Transistor Product Summary V 40 V DS 4) 8.6 mW R DS(on),max I 20 A D Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPG20N04S4-09 PG-TDSON-8-4 4N0409 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C, V =10 V1) 20 A D C GS one channel active T =100 °C, C 20 V =10 V2) GS Pulsed drain current2) I - 80 D,pulse one channel active I =10A 145 mJ Avalanche energy, single pulse2, 4) E AS D - 15 A Avalanche current, single pulse4) I AS V - Gate source voltage ±20 V GS Power dissipation P T =25 °C 54 W tot C one channel active T , T - Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2010-10-08 IPG20N04S4-09 Parameter Sym

1.3. ipg20n04s4l-08_ds_1_0.pdf Size:157K _infineon

IPG20N04S4L-08 OptiMOS™-T2 Power-Transistor Product Summary V 40 V DS 4) 8.2 mW R DS(on),max I 20 A D Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPG20N04S4L-08 PG-TDSON-8-4 4N04L08 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C, V =10 V1) 20 A D C GS one channel active T =100 °C, C 20 V =10 V2) GS Pulsed drain current2) I - 80 D,pulse one channel active I =10A 145 mJ Avalanche energy, single pulse2, 4) E AS D - 15 A Avalanche current, single pulse4) I AS V - Gate source voltage ±16 V GS Power dissipation P T =25 °C 54 W tot C one channel active T , T - Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2010-10-05 IPG20N04S4L-08 Parameter

1.4. ipg20n04s4l-07_ds_1_0.pdf Size:156K _infineon

IPG20N04S4L-07 OptiMOS™-T2 Power-Transistor Product Summary V 40 V DS 4) 7.2 mW R DS(on),max I 20 A D Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPG20N04S4L-07 PG-TDSON-8-4 4N04L07 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C, V =10 V1) 20 A D C GS one channel active T =100 °C, C 20 V =10 V2) GS Pulsed drain current2) I - 80 D,pulse one channel active I =10A 230 mJ Avalanche energy, single pulse2, 4) E AS D - 15 A Avalanche current, single pulse4) I AS V - Gate source voltage ±16 V GS Power dissipation P T =25 °C 65 W tot C one channel active T , T - Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2010-10-05 IPG20N04S4L-07 Parameter

1.5. ipg20n04s4-08_ds_1_0.pdf Size:157K _infineon

IPG20N04S4-08 OptiMOS™-T2 Power-Transistor Product Summary V 40 V DS 4) 7.6 mW R DS(on),max I 20 A D Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPG20N04S4-08 PG-TDSON-8-4 4N0408 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C, V =10 V1) 20 A D C GS one channel active T =100 °C, C 20 V =10 V2) GS Pulsed drain current2) I - 80 D,pulse one channel active I =10A 230 mJ Avalanche energy, single pulse2, 4) E AS D - 15 A Avalanche current, single pulse4) I AS V - Gate source voltage ±20 V GS Power dissipation P T =25 °C 65 W tot C one channel active T , T - Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2010-10-05 IPG20N04S4-08 Parameter Sym

1.6. ipg20n04s4-12_ds_1_0.pdf Size:159K _infineon

IPG20N04S4-12 OptiMOS™-T2 Power-Transistor Product Summary V 40 V DS 4) 12.2 mW R DS(on),max I 20 A D Features • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPG20N04S4-12 PG-TDSON-8-4 4N0412 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C, V =10 V1) 20 A D C GS one channel active T =100 °C, C 20 V =10 V2) GS Pulsed drain current2) I - 80 D,pulse one channel active I =10A 80 mJ Avalanche energy, single pulse2, 4) E AS D - 15 A Avalanche current, single pulse4) I AS V - Gate source voltage ±20 V GS Power dissipation P T =25 °C 41 W tot C one channel active T , T - Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2010-10-05 IPG20N04S4-12 Parameter Sym

See also transistors datasheet: IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 , IPG20N04S4L-07 , J111 , IPG20N04S4L-11 , IPG20N06S2L-35 , IPG20N06S2L-50 , IPG20N06S2L-65 , IPG20N06S4-15 , IPG20N06S4L-11 , IPG20N06S4L-14 , IPG20N06S4L-26 .

Keywords