IPI60R199CP MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPI60R199CP

Type of IPI60R199CP transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 139

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 16

Maximum junction temperature (Tj), °C:

Rise Time of IPI60R199CP transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.199

Package: I2PAK_(TO262)

Equivalent transistors for IPI60R199CP

IPI60R199CP PDF documents for downloads:

1.1. ipi60r199cp_rev2.1a.pdf Size:550K _infineon

IPI60R199CP C??IMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,H / xQg ON 0.199 DS(on) max U 2 AHF6 ADK <6H: 8=6F<: nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG?TO262 ::7!"% # 4= =;0.4,77C /0=4290/ 1:< U %6F9 GK>H8=>C< HDEDAD<>:G ;DF 0:FJ:F 6C9 1:A:8DB Type Package "492= 6H X ICA:GG DH=:FK>G: GE:8>;>:9 j Parameter Symb?I C?nditi?ns VaIue Unit X DCH>CIDIG 9F6>C 8IFF:CH 16 A D C X 10 C X 51 -IAG:9 9F6>C 8IFF:CH2) D pulse C 3 J6A6C8=: :C:FCH>J: t A D DD A 2) ) 6.6 J6A6C8=: 8IFF:CH F:E:H>H>J: t A A A 3 * , 0#"1 9v /dt FI<<:9C:GG 9v /dt 50 V/ns DS $6H: GDIF8: JDAH6<: static ±20 V GS f %N ± 0 X -DK:F 9>GG

2.1. ipi60r190c6_2_1.pdf Size:1495K _infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss drain • Very high commutation ruggedness pin 2 • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Hal

3.1. ipi60r125cp_rev2.0.pdf Size:547K _infineon

IPI60R125CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,H / xQg ON 0.125 DS(on) max U 2 AHF6 ADK <6H: 8=6F<: 5 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG?TO220 PG?TO262 ::7!"% # 4= =;0.4,77C /0=4290/ 1:< U %6F9 GK>H8=>C< HDEDAD<>:G ;DF 0:FJ:F 6C9 1:A:8DB Type Package Marking IPI60 125CP PG?TO262 6 125P !,B48?8 <,>492= 6H X ICA:GG DH=:FK>G: GE:8>;>:9 j Parameter Symb?I C?nditi?ns VaIue Unit X DCH>CIDIG 9F6>C 8IFF:CH 25 A D C X 16 C X 82 -IAG:9 9F6>C 8IFF:CH2) D pulse C 3 J6A6C8=: :C:FCH>J: t A D DD A 2) ) 11 J6A6C8=: 8IFF:CH F:E:H>H>J: t A A A 3 * , 0#"1 9v /dt FI<<:9C:GG 9v /dt 50 V/ns DS $6H: GDIF8: JDAH6<: static ±20 V GS f %N ± 0 X -DK:F 9>GG>E6H>

3.2. ipi60r165cp_rev2.0.pdf Size:547K _infineon

IPI60R165CP C??IMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,H / xQg ON 0.165 W DS(on) max U 2 AHF6 ADK <6H: 8=6F<: 9 nC g typ U "LHF:B: 9J 9H F6H:9 U %><= E:6@ 8IFF:CH 86E67>A>HM U . I6A>;>:9 for industrial grade applications 688DF9>C< HD '"!" U -7 ;F:: A:69 EA6H>C< / D%0 8DBEA>6CH; Halogen free mold compound PG?TO262 ::7!"% # 4= /0=4290/ 1:< U %6F9 GK>H8=>C< HDEDAD<>:G ;DF 0:FJ:F 6C9 1:A:8DB Type Package Marking IPI60 165CP PG?TO262 6 165P !,B48?8 <,>492= 6H X ICA:GG DH=:FK>G: GE:8>;>:9 j Parameter Symb?I C?nditi?ns VaIue Unit X DCH>CIDIG 9F6>C 8IFF:CH 21 A D C X 1 C X 61 -IAG:9 9F6>C 8IFF:CH2) D pulse C 3 J6A6C8=: :C:FCH>J: t A D DD A 2) ) 7.9 J6A6C8=: 8IFF:CH F:E:H>H>J: t A A A 3 * , 0#"1 9v /dt FI<<:9C:GG 9v /dt 50 V/ns DS $6H: GDIF8: JDAH6<: static ±20 V GS f %N ± 0 -DK:F 9>GG>E6H>DC X 192 W tot C , E:F

See also transistors datasheet: IPI50R399CP , IPI530N15N3G , IPI600N25N3G , IPI60R099CP , IPI60R099CPA , IPI60R125CP , IPI60R165CP , IPI60R190C6 , IRF1405 , IPI60R250CP , IPI60R280C6 , IPI60R299CP , IPI60R380C6 , IPI60R385CP , IPI60R520CP , IPI60R600CP , IPI65R280C6 .

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