IPP100N08S2L-07 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP100N08S2L-07

Type of IPP100N08S2L-07 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 300

Maximum drain-source voltage |Uds|, V: 75V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 100

Maximum junction temperature (Tj), °C:

Rise Time of IPP100N08S2L-07 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0068

Package: PGTO22031

Equivalent transistors for IPP100N08S2L-07

IPP100N08S2L-07 PDF documents for downloads:

1.1. ipp100n08s2-07_ipb100n08s2-07_ipi100n08s2-07_green.pdf Size:158K _infineon

IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 OptiMOS® Power-Transistor Product Summary Features V 75 V DS • N-channel - Enhancement mode R (SMD version) 6.8 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB100N08S2-07 PG-TO263-3-2 SP0002-19044 PN0807 IPP100N08S2-07 PG-TO220-3-1 SP0002-19005 PN0807 IPI100N08S2-07 PG-TO262-3-1 SP0002-19041 PN0807 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 100 A Continuous drain current1) D C GS T =100 °C, C 94 V =10 V2) GS I T =25 °C 400 Pulsed drain current2) D,pulse C I = 80 A 810 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and s

1.2. ipp100n08s2l-07_ipb100n08s2l-07_green.pdf Size:154K _infineon

IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS® Power-Transistor Product Summary Features V 75 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 6.5 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB100N08S2L-07 PG-TO263-3-2 SP0002-19053 PN08L07 IPP100N08S2L-07 PG-TO220-3-1 SP0002-19052 PN08L07 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 100 A Continuous drain current1) D C GS T =100 °C, C 98 V =10 V2) GS I T =25 °C 400 Pulsed drain current2) D,pulse C I =80A 810 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 200

2.1. ipp100n04s4-h2_ipb100n04s4-h2_ipi100n04s4-h2.pdf Size:159K _infineon

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m? DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB100N04S4-02 PG-TO263-3-2 4N04H2 IPI100N04S4-02 PG-TO262-3-1 4N04H2 IPP100N04S4-02 PG-TO220-3-1 4N04H2 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 100 A Continuous drain current1) D C GS T =100°C, V =10V2) 100 C GS I T =25°C 400 Pulsed drain current2) D,pulse C I =50A 280 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 100 A AS V - Gate source voltage ±20 V GS P T =25°C Power dissipation 115 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg

2.2. ipp100n04s2l-03_ipb100n04s2l-03_green.pdf Size:153K _infineon

IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 3.0 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB100N04S2L-03 PG-TO263-3-2 SP0002-19065 PN04L03 IPP100N04S2L-03 PG-TO220-3-1 SP0002-19062 PN04L03 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 100 A Continuous drain current1) D C GS T =100 °C, C 100 V =10 V2) GS I T =25 °C 400 Pulsed drain current2) D,pulse C I =80A 810 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 20

2.3. ipp100n04s2-04_ipb100n04s2-04_green.pdf Size:153K _infineon

IPB100N04S2-04 IPP100N04S2-04 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel - Enhancement mode R (SMD version) 3.3 m? DS(on),max • Automotive AEC Q101 qualified I 100 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Ordering Code Marking IPB100N04S2-04 PG-TO263-3-2 SP0002-19061 PN0404 IPP100N04S2-04 PG-TO220-3-1 SP0002-19056 PN0404 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 100 A Continuous drain current1) D C GS T =100 °C, C 100 V =10 V2) GS I T =25 °C 400 Pulsed drain current2) D,pulse C I =80A 810 mJ Avalanche energy, single pulse2) E AS D V ±20 V Gate source voltage4) GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg Rev. 1.0 page 1 2006-03-02  IPB100

2.4. ipp100n04s3_ipb100n04s3_ipi100n04s3-03_ds_1_0.pdf Size:196K _infineon

IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD Version) 2.5 m? DS(on) I 100 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB100N04S3-03 PG-TO263-3-2 3PN0403 IPI100N04S3-03 PG-TO262-3-1 3PN0403 IPP100N04S3-03 PG-TO220-3-1 3PN0403 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25°C, V =10V1) 100 A D C GS T =100°C, V =10V2) 100 C GS I T =25 °C 400 Pulsed drain current2) D,pulse C E I =80 A Avalanche energy, single pulse 898 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 214 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC climatic c

See also transistors datasheet: IPL60R299CP , IPL60R385CP , IPP100N04S2-04 , IPP100N04S2L-03 , IPP100N04S3-03 , IPP100N06S2-05 , IPP100N06S2L-05 , IPP100N08S2-07 , BUZ900 , IPP100N10S3-05 , IPP100P03P3L-04 , IPP120N04S3-02 , IPP120N06S4-03 , IPP22N03S4L-15 , IPP45N06S4-09 , IPP45N06S4L-08 , IPP45P03P4L-11 .

Keywords