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IPP80N04S2L-03 MOSFET (IC) Datasheet. Cross Reference Search. IPP80N04S2L-03 Equivalent

Type Designator: IPP80N04S2L-03

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 300

Maximum Drain-Source Voltage |Vds|, V: 40

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 80

Maximum Junction Temperature (Tj), °C:

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.0034

Package: PGTO220

IPP80N04S2L-03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPP80N04S2L-03 PDF doc:

1.1. ipp80n04s2l-03_ipb80n04s2l-03_green.pdf Size:153K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package

1.2. ipp80n04s2_ipb80n04s2_ipi80n04s2-h4.pdf Size:190K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS® Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ultra low Rds(on) • 100% Avalanche tested • Green product (RoHS compl

1.3. ipp80n04s3_ipb80n04s3_ipi80n04s3.pdf Size:188K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package

1.4. ipp80n04s4l-04_ipb80n04s4l-04_ipi80n04s4l-04.pdf Size:159K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking I

1.5. ipp80n04s3-h4.pdf Size:169K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 4.5 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package

1.6. ipp80n04s2-04_ipb80n04s2-04_ipi80n04s2-04_green.pdf Size:159K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS® Power-Transistor Product Summary Features V 40 V DS • N-channel - Enhancement mode R (SMD version) 3.4 m? DS(on),max • Automotive AEC Q101 qualified I 80 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested

1.7. ipp80n04s3_b80n04s3_i80n04s3-03.pdf Size:188K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.2 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche

1.8. ipp80n04s3_ipb80n04s3_ipi80n04s3-04.pdf Size:187K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m? DS(on),max I 80 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package

1.9. ipp80n04s4-03_ipb80n04s4-03_ipi80n04s4-03.pdf Size:158K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB8

1.10. ipp80n04s4-04_ipb80n04s4-04_ipi80n04s4-04.pdf Size:160K _infineon

IPP80N04S2L-03
IPP80N04S2L-03

IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m? DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB8

See also transistors datasheet: IPP70N10S3-12 , IPP70N10S3L-12 , IPP70N10SL-16 , IPP77N06S2-12 , IPP80N03S4L-03 , IPP80N03S4L-04 , IPP80N04S2-04 , IPP80N04S2-H4 , IRFP460 , IPP80N04S3-03 , IPP80N04S3-04 , IPP80N04S3-06 , IPP80N04S3-H4 , IPP80N04S4-04 , IPP80N04S4L-04 , IPP80N06S2-05 , IPP80N06S2-07 .

Search Terms:

 IPP80N04S2L-03 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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