IPP032N06N3G MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP032N06N3G

Type of IPP032N06N3G transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 188

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 120

Maximum junction temperature (Tj), °C:

Rise Time of IPP032N06N3G transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0032

Package: TO220

Equivalent transistors for IPP032N06N3G

IPP032N06N3G PDF documents for downloads:

5.1. ipp030n10n3g_rev21.pdf Size:536K _infineon

IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max 3 mW • Excellent gate charge x R product (FOM) DS(on) ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP030N10N3 G IPI030N10N3 G Package PG-TO220-3 PG-TO262-3 Marking 030N10N 030N10N Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I Continuous drain current T =25 °C2) 100 A D C T =100 °C 100 C I T =25 °C 400 Pulsed drain current2) D,pulse C E Avalanche energy, single pulse I =100 A, R =25 W 1000 mJ AS D GS V Gate source voltage ±20 V GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... 175 °C j stg IEC climatic category; DIN IEC 68-1 55/1

5.2. ipp030n10n3g_rev2[1].1.pdf Size:575K _infineon

$$ " " $ " " ® $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 1 D Q ' 381>>5< >?B=1< <5F5< m D n) m x Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) 1 D Q .5BI B5C9CD1>35 D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?> Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>38B?>?EC B53D96931D9?> Type #)) ' ' ! #)# ' ' ! Package G? O ? G? O ? Marking N1 N N1 N !-C59@9 =-?5:3> 1D T E><5CC ?D85BG9C5 C@5396954 j Parameter Symb?I C?nditi?ns VaIue Unit ) ?>D9>E?EC 4B19> 3EBB5>D 1 T D C T 1 C T 4 )E 3EBB5>D ) D p l e C F1<1>385 5>5B7I C9>7<5 @E t t C ( @5B1D9>7 1>4 CD?B175 D5=@5B1DEB5 T j t # 3<9=1D93 31D57?BI #' # 1) $ ,- 1>4 $ , ) ,55 697EB5 + 5F @175  $$ " " $ " " Parameter Symb?I C?nditi?ns VaIues Unit min. typ. max. '41=9-8 /4-=-/?1=5>?5/> -85B=1< B5C9CD1>35 :E>3D9

5.3. ipp034n03l_rev2.0.pdf Size:726K _infineon

Type IPP034N03L G IPB034N03L G ™ 3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 3.4 mW DS(on),max • Optimized technology for DC/DC converters I 80 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPP034N03L G IPB034N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 034N03L 034N03L Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25 °C Continuous drain current 80 A D GS C V =10 V, T =100 °C 80 GS C V =4.5 V, T =25 °C 80 GS C V =4.5 V, GS 77 T =100 °C C I T =25 °C 400 Pulsed drain current2) D,pulse C T =25 °C 80 Avalanche current, single pulse3) I AS C E Avalanche energy, single pulse I =80 A, R =25 W 70 mJ AS D GS I =80 A,

See also transistors datasheet: IPP90N06S4-04 , IPP90N06S4L-04 , IPP015N04NG , IPP023N04NG , IPP023NE7N3G , IPP024N06N3G , IPP028N08N3G , IPP030N10N3G , IRLR2905 , IPP034N03LG , IPP034NE7N3G , IPP037N06L3G , IPP037N08N3G , IPP039N04LG , IPP040N06N3G , IPP041N04NG , IPP041N12N3G .

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