IPP042N03LG MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP042N03LG

Type of IPP042N03LG transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 79

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPP042N03LG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0042

Package: TO220

Equivalent transistors for IPP042N03LG

IPP042N03LG PDF documents for downloads:

1.1. ipp042n03l_rev2.0.pdf Size:612K _infineon

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5.1. ipp048n12n3g_rev2.1.pdf Size:566K _infineon

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5.2. ipp045n10n3g_rev2.5.pdf Size:748K _infineon

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G ™3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5< >?B=1< <5F5< R 4 m , ?> =1H -( Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) I 1 D Q .5BI B5C9CD1>35 R D n) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?> Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>38B?>?EC B53D96931D9?> Q "1 6B55 133?B49>7 D? # Type #) ' ' ! #)# ' ' ! #)) ' ' ! Package G? O ? G? O ? G? O ? Marking 4 N1 N 4 N1 N 4 N1 N Maximum ratings, 1D T T E><5CC ?D85BG9C5 C@5396954 j Parameter Symbol Conditions Value Unit ) I ?>D9>E?EC 4B19> 3EBB5>D T T 1 D C T T 1 C I T T 4 )E 3EBB5>D ) D p l e C E F1<1>385 5>5B7I C9>7<5 @E 14 t t C T T ( @5B1D9>7 1>4 CD?B175 D5=@5B1DEB5 T j t # 3<9=1D93 31D57?BI #' # 1) $ ,- 1>4 $ , ) ,55 697EB5 + 5F

5.3. ipp048n04n_rev1.0.pdf Size:565K _infineon

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5.4. ipp04cn10n_rev1.4.pdf Size:874K _infineon

IPB04CN10N G IPI04CN10N G IPP04CN10N G ™ 2 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package G? O ? G? O ? G? O ? Marking 4CN1 N 4CN1 N 4CN1 N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit ) I @?E:?F@FD 5C2:? 4FCC6?E T U 1 D C T U 1 C I T U 4 *F=D65 5C2:? 4FCC6?E ) D p l e C E G2=2?496 6?6C8J D:?8=6 AF=D6 I R 1 m D G V ± "2E6 D@FC46 G@=E286 4) G P T U *@H6C 5:DD:A2E:@? t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t $ 4=:>2E:4 42E68@CJ $( $ , 6G A286 IPB04CN10N G IPI04CN10N G IPP04CN

5.5. ipp04n03lb_rev0[1].95.pdf Size:535K _infineon

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5.6. ipb048n06lg_ipp048n06lg_rev1.15.pdf Size:734K _infineon

IPP048N06L G IPB048N06L G ™ Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 4 4 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #** ( & #* ( & Package ? O ? ?1 ? O ? ? Marking 4 N 4 N Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S 1 D C T S 1 C ) I *D 3DAA5>C T S 4 D p l e C E E1<1>385 5>5A7H B9>7<5 @D P T S t t C ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 T T S j t # 3<9=1C93 31C57?AH #( # DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> + C85 389@ 9B 12<5 C? 31AAH t C ) ,55 697DA5 + 5E @175 IPP048N06L G IPB048N06L G Parameter S

See also transistors datasheet: IPP034N03LG , IPP034NE7N3G , IPP037N06L3G , IPP037N08N3G , IPP039N04LG , IPP040N06N3G , IPP041N04NG , IPP041N12N3G , BF980 , IPP045N10N3G , IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG .

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