IPP048N12N3G MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP048N12N3G

Type of IPP048N12N3G transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 300

Maximum drain-source voltage |Uds|, V: 120V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 100

Maximum junction temperature (Tj), °C:

Rise Time of IPP048N12N3G transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0048

Package: TO220

Equivalent transistors for IPP048N12N3G

IPP048N12N3G PDF documents for downloads:

1.1. ipp048n12n3g_rev2.1.pdf Size:566K _infineon

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3.1. ipp048n04n_rev1.0.pdf Size:565K _infineon

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3.2. ipb048n06lg_ipp048n06lg_rev1.15.pdf Size:734K _infineon

IPP048N06L G IPB048N06L G ™ Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 4 4 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #** ( & #* ( & Package ? O ? ?1 ? O ? ? Marking 4 N 4 N Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S 1 D C T S 1 C ) I *D 3DAA5>C T S 4 D p l e C E E1<1>385 5>5A7H B9>7<5 @D P T S t t C ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 T T S j t # 3<9=1C93 31C57?AH #( # DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> + C85 389@ 9B 12<5 C? 31AAH t C ) ,55 697DA5 + 5E @175 IPP048N06L G IPB048N06L G Parameter S

See also transistors datasheet: IPP037N08N3G , IPP039N04LG , IPP040N06N3G , IPP041N04NG , IPP041N12N3G , IPP042N03LG , IPP045N10N3G , IPP048N04NG , IRF460 , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , IPP057N08N3G , IPP05CN10LG .

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