IPP057N08N3G MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP057N08N3G

Type of IPP057N08N3G transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 80V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPP057N08N3G transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0057

Package: TO220

Equivalent transistors for IPP057N08N3G

IPP057N08N3G PDF documents for downloads:

2.1. ipp057n06n3_ipb057n06n3_rev2.2.pdf Size:691K _infineon

pe IPB054N06N3 G IPP057N06N3 G ™ 3 Power-Transistor Product Summary Features V D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35<<5>D 71D5 381B75 H R @B?4E3D ( & D n) Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?>C Q "1 6B55 133?B49>7 D? # Type #) ' ' ! #)) ' ' ! Package G? O ? G? O ? Marking 4N N 7N N Maximum ratings, 1D T T E><5CC ?D85BG9C5 C@5396954 j Parameter Symbol Conditions Value Unit ) I ?>D9>E?EC 4B19> 3EBB5>D T T D C T T 7 C I T T )E 3EBB5>D ) D p l e C I R 77 m F1<1>385 5>5B7I C9>7<5 @E 11 t t C T T ( @5B1D9>7 1>4 CD?B175 D5=@5B1DEB5 T j t # 3<9=1D93 31D57?BI #' # 1) $ ,- 1>4 $ , ) EBB5>D 9C <9=9D54 2I 2?>4G9B5 G9D8 1> R % / D85 389@ 9C 12<5 D? 31BBI t C ) ,55

5.1. ipp055n03l_rev2.0.pdf Size:730K _infineon

Type IPP055N03L G IPB055N03L G ™ 3 Power-Transistor Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 5.5 mW DS(on),max • Optimized technology for DC/DC converters I 50 A D • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPP055N03L G IPB055N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 055N03L 055N03L Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25 °C Continuous drain current 50 A D GS C V =10 V, T =100 °C 50 GS C V =4.5 V, T =25 °C 50 GS C V =4.5 V, GS 50 T =100 °C C I T =25 °C 350 Pulsed drain current2) D,pulse C T =25 °C 50 Avalanche current, single pulse3) I AS C E Avalanche energy, single pulse I =35 A, R =25 W 60 mJ AS D GS I =50

5.2. ipp054ne8n_rev1.2.pdf Size:875K _infineon

IPB051NE8N G IPI05CNE8N G IPP054NE8N G ™ 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R 1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package G? O ? G? O ? G? O ? Marking 1N N CN N 4N N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit ) I @?E:?F@FD 5C2:? 4FCC6?E T U 1 D C T U 1 C I T U 4 *F=D65 5C2:? 4FCC6?E ) D p l e C E G2=2?496 6?6C8J D:?8=6 AF=D6 I R m D G I V / D D , 6G6CD6 5:@56 5v t v t i t WD k µ T U j m x V ± "2E6 D@FC46 G@=E286 4) G P T U *@H6C 5:DD:A2E:@? t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t $ 4=:>2E:4 42E68

5.3. ipp05cn10l_rev1[1].02.pdf Size:563K _infineon

%% # ! ® % (>.;?6?@<> %><1A0@ 'A::.>E Features 1 D U ) 7<5BB9@ @C;=7 @9J9@ 1 m D n) m x U L79@@9BH ;5H9 7<5F;9 L D n) DFC8I7H !* ( 1 D U 09FM @CK CB F9G=GH5B79 D n) U X CD9F5H=B; H9AD9F5HIF9 U +6 :F99 @958 D@5H=B; - C#. 7CAD@=5BH 1) U , I5@=:=98 577CF8=B; HC % :CF H5F;9H 5DD@=75H=CB U $895@ :CF <=;< :F9EI9B7M GK=H7<=B; 5B8 GMB7.@6;4? 5H j X IB@9GG CH<9FK=G9 GD97=:=98 Parameter Symb?I C?nditi?ns VaIue Unit ) CBH=BICIG 8F5=B 7IFF9BH 1 X D C X 1 C X 4 +I@G98 8F5=B 7IFF9BH ) D p l e C J5@5B7<9 9B9F;M G=B;@9 DI@G9 G m D 0 D D - 9J9FG9 8=C89 8 ZG k µ X j m x ± "5H9 GCIF79 JC@H5;9 4) G X +CK9F 8=GG=D5H=CB t t C * D9F5H=B; 5B8 GHCF5;9 H9AD9F5HIF9 X j t $ 7@=A5H=7 75H9;CFM $) $ - 9J D5;9  %% # ! Parameter Symb?I C?nditi?ns VaIues Unit min. typ. max. (52>:.9 05.>.0@2>6?@60? /<9FA5@ F9G=GH5B79 >IB7H=CB 75G9 ? ? t C /<9FA

5.4. ipp052n06l3_ipb052n06l3_rev2.4.pdf Size:683K _infineon

pe IPB049N06L3 G IPP052N06L3 G ™ 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D R "2=@86? 7C66 244@C5:?8 E@ # Type #* ( & ! #** ( & ! Package G? O ? G? O ? Marking 4 N N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit ) I @?E:?F@FD 5C2:? 4FCC6?E T U D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C I R 77 m G2=2?496 6?6C8J D:?8=6 AF=D64) E D G V !2E6 D@FC46 G@=E286 ± G P T U *@H6C 5:DD:A2E:@? 11 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t 1) $ -. 2?5 $ - ) FCC6?E :D =:>:E65 3J 3@?5H:C6 H:E9 2? R % 0 E96 49:A :D 23=6 E@ 42CCJ t C ) -66 7:8FC6 7@C >@C6 56E2:=65 :?7@C>2E

5.5. ipb050n06ng_ipp050n06ng_rev1.16.pdf Size:731K _infineon

IPP050N06N G IPB050N06N G ™ Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 4 7 m + >= < 0F +& D4@A8>= O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; I 1 D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B O "0;>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package ? O ? ? O ? Marking N N N N Maximum ratings, 0B T R C=;4AA >B74@E8A4 A?4285843 j Parameter Symbol Conditions Value Unit 1) I >=B8=C>CA 3@08= 2C@@4=B T R 1 D C T R 1 C ) I )C;A43 3@08= 2C@@4=B T R 4 D p l e C E D0;0=274 4=4@6G A8=6;4 ?C;A4 I R 1 m D G I V - D D * 4D4@A4 38>34 3v t v t i t TA k µ T R j m x V !0B4 A>C@24 D>;B064 ± G P T R )>E4@ 38AA8?0B8>= t t C T T ( ?4@0B8=6 0=3 AB>@064 B4< ?4@0BC@4 R j t # 2;8< 0B82 20B46>@G #' # C@@4=B 8A ;8< 8B43 1G 1>=3E8@4 E8B7 0= *t C B74 278? 8A 01;4 B> 20@@G ) +44 586C@4 * 4D ?064 IPP050N06N G IPB050N06N G Paramet

5.6. ipp05cn10n_rev1.2.pdf Size:781K _infineon

IPB05CN10N G IPI05CN10N G IPP05CN10N G ™ 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D:DE2?46 R DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package PG?TO26 ? PG?TO262? PG?TO220? Marking 05CN10N 05CN10N 05CN10N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit 2) I @?E:?F@FD 5C2:? 4FCC6?E T U 100 A D C T U 100 C I T U 400 *F=D65 5C2:? 4FCC6?E ) D pulse C E G2=2?496 6?6C8J D:?8=6 AF=D6 I R 826 m AS D GS I V / D DS , 6G6CD6 5:@56 5v /dt dv /dt di /dt WD 6 kV/µs T U j max V ±20 V "2E6 D@FC46 G@=E286 4) GS P T U *@H6C 5:DD:A2E:@? 00 W tot C T T

See also transistors datasheet: IPP048N04NG , IPP048N12N3G , IPP04CN10NG , IPP04N03LBG , IPP052N06L3G , IPP052NE7N3G , IPP055N03LG , IPP057N06N3G , IRF1407 , IPP05CN10LG , IPP05CN10NG , IPP062NE7N3G , IPP065N03LG , IPP065N04NG , IPP065N06LG , IPP06CN10LG , IPP06CN10NG .

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