MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP16N50I-HF
AP16N50W ..AP3990P
AP3990R-HF ..AP4953GM-HF
AP4955GM ..AP9412GJ
AP9412GP ..AP9962AGP-HF
AP9962BGH-HF ..APT30M40JVFR
APT30M40JVR ..AUIRF7379Q
AUIRF7416Q ..BF1109
BF1109R ..BLF578
BLF578XR ..BSC027N04LSG
BSC028N06LS3G ..BSS192P
BSS209PW ..BUK6C1R5-40C
BUK6E2R0-30C ..BUK9509-40B
BUK9509-75A ..BUZ74A
BUZ76 ..CED6086
CED6186 ..CEP13N10
CEP13N10L ..DM601
DM616 ..DMP3056LSS
DMP3098L ..FDB024N04AL7
FDB024N06 ..FDD3860
FDD3860 ..FDMC2512SDC
FDMC2514SDC ..FDN339AN
FDN340P ..FDR858P
FDS2572 ..FDT3N40
FDT434P ..FQB6N80
FQB7N60 ..FQPF22P10
FQPF27N25 ..FRM450H
FRM450R ..H04N60F
H04N65E ..HAT1126RJ
HAT1127H ..HN1K03FU
HN1K04FU ..IPA60R280C6
IPA60R280E6 ..IPB80P03P4L-04
IPB80P03P4L-07 ..IPI50N10S3L-16
IPI50R140CP ..IPP70N10S3-12
IPP70N10S3L-12 ..IRF1405
IRF1405L ..IRF623FI
IRF624 ..IRF7389
IRF740 ..IRF9310
IRF9317 ..IRFE230
IRFE310 ..IRFM460
IRFM9140 ..IRFR120A
IRFR120N ..IRFS624
IRFS624A ..IRFU420
IRFU420A ..IRL530N
IRL530NL ..IRLTS6342
IRLU010 ..IXFH12N100Q
IXFH12N120 ..IXFK360N10T
IXFK360N15T2 ..IXFN82N60P
IXFN82N60Q3 ..IXFV12N90P
IXFV12N90PS ..IXTA200N055T2
IXTA200N055T2-7 ..IXTH300N04T2
IXTH30N25 ..IXTP12N50PM
IXTP130N065T2 ..IXTQ86N20T
IXTQ86N25T ..J211
J212 ..KMB054N40DA
KMB054N40DB ..KTK921U
KTK951S ..MTB17A03Q8
MTB17A03V8 ..MTN1N60A3
MTN1N65I3 ..MTP405CJ3
MTP405J3 ..NDT454P
NDT455N ..NTMS4807N
NTMS4816N ..PHP3N40E
PHP3N50E ..PSMN030-150B
PSMN030-150P ..RD30HVF1
RD45HMF1 ..RJK0364DPA
RJK0365DPA ..RQ1E070RP
RQ1E075XN ..SDF054JAA-U
SDF054JAB-D ..SFS2955
SFS9510 ..SMG2342N
SMG2342NE ..SML5050CN
SML5085AN ..SPD15P10PG
SPD15P10PLG ..SSG4536C
SSG4542C ..SSM3K16FS
SSM3K16FU ..SSP7464N
SSP7480N ..STB80PF55
STB85NF3LL ..STD8N10-1
STD8N10L ..STH8NA60
STH8NA60FI ..STP165N10F4
STP16N65M5 ..STP5NK50Z
STP5NK52ZD ..STU85N3LH5
STU8N65M5 ..TJ10S04M3L
TJ11A10M3 ..TK8A50DA
TK8A55DA ..TPCA8054-H
TPCA8055-H ..UT120N03
UT12N10 ..WTD9575
WTD9973 ..ZXMP2120G4
ZXMP3A13F ..ZXMS6006SG
 
IPP080N06NG All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IPP080N06NG MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP080N06NG

Type of IPP080N06NG transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 214

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPP080N06NG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.008

Package: TO220

Equivalent transistors for IPP080N06NG

IPP080N06NG PDF doc:

1.1. ipb080n06ng_ipp080n06ng_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 14 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55 697DA5 + 5E @175 IPB080N06N G IPP080N06N G Parameter

2.1. ipp080n03l_rev2.0.pdf Size:728K _infineon

IPP080N06NG
IPP080N06NG
Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type IPP080N03L G IPB080N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 080N03L 080N03L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 C 50 A D GS C V =10 V, T =100 C 42 GS C V =4.5 V, T =25 C 48 GS C V =4.5 V, GS 34 T =100 C C I T =25 C 350 Pulsed drain current2) D,pulse C T =25 C 50 Avalanche current, single pulse3) I AS C E Avalanche energy, single pulse I =12 A, R =25 W 50 mJ AS D GS I =50 A,

5.1. ipp08cn10n_rev1.08.pdf Size:750K _infineon

IPP080N06NG
IPP080N06NG
$ " " $ " " $$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D:DE2?46 DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package PG?TO26 ? PG?TO262? PG?TO220? Marking 08CN10N 08CN10N 08CN10N !-C59@9 =-?5:3> 2E U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Unit U @?E:?F@FD 5C2:? 4FCC6?E 95 A D C U 68 C U 80 *F=D65 5C2:? 4FCC6?E2) D pulse C G2=2?496 6?6C8J D:?8=6 AF=D6 262 m AS D GS / D DS , 6G6CD6 5:@56 5v /dt dv /dt d /dt WD 6 kV/s U j max 20 V "2E6 D@FC46 G@=E286 ) GS U *@H6C 5:DD:A2E:@? 167 W tot C ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j stg $ 4=:>2E:4 42E68@CJ $

5.2. ipp08cne8n_rev1.07.pdf Size:772K _infineon

IPP080N06NG
IPP080N06NG
IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package G? O ? G? O ? G? O ? Marking CN N CN N CN N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit I T U @?E:?F@FD 5C2:? 4FCC6?E D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C E G2=2?496 6?6C8J D:?8=6 AF=D6 I R m D G I V / D D , 6G6CD6 5:@56 5v t v t i t WD k T U j m x V "2E6 D@FC46 G@=E286 ) G P T U *@H6C 5:DD:A2E:@? 1 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t $ 4=:>2E:4 42E68@CJ $( $ , 6G

5.3. ipb085n06lg_ipp085n06lg_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB085N06L G IPP085N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( & ! #** ( & ! Type Package Marking #* ( & ! ? O ? O ? ? ? ? ON ? ?1 Package ? #** ( & ! N ? O ? ?1 NN Marking Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 1 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55

5.4. ipp084n06l3_ipb084n06l3_rev2.23.pdf Size:683K _infineon

IPP080N06NG
IPP080N06NG
pe IPB081N06L3 G IPP084N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 1 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D R "2=@86? 7C66 244@C5:?8 E@ # Type #* ( & ! #** ( & ! Package G? O ? G? O ? Marking 1N 4N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit ) I @?E:?F@FD 5C2:? 4FCC6?E T U D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C I R 4 m G2=2?496 6?6C8J D:?8=6 AF=D64) E D G V !2E6 D@FC46 G@=E286 G P T U *@H6C 5:DD:A2E:@? 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t 1) $ -. 2?5 $ - ) FCC6?E :D =:>:E65 3J 3@?5H:C6 H:E9 2? R % 0 E96 49:A :D 23=6 E@ 42CCJ t C ) -66 7:8FC6 7@C >@C6 56E2:=65 :?7@C>2E:@?

5.5. ipp08cn10l_rev1[1].01.pdf Size:515K _infineon

IPP080N06NG
IPP080N06NG
IPP08CN10L G 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 8 m? DS(on),max Excellent gate charge x R product (FOM) DS(on) I 98 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPP08CN10L G Package PG-TO220-3 Marking 08CN10L Maximum ratings, at T =25 C, unless otherwise specified j Parameter SymboI Conditions VaIue Unit I T =25 C Continuous drain current 98 A D C T =100 C 70 C I T =25 C 392 Pulsed drain current2) D,pulse C E Avalanche energy, single pulse I =98 A, R =25 ? 254 mJ AS D GS I =95 A, V =80 V, D DS Reverse diode dv /dt dv /dt di /dt =100 A/s, 6 kV/s T =175 C j,max V 20 V Gate source voltage3) GS P T =25 C Power dissipation 167 W tot C T , T Operating and storage temperature -55 ... 175 C j

See also transistors datasheet: IPP06CN10NG , IPP070N06LG , IPP070N06NG , IPP070N08N3G , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G , IPP080N03LG , IRF9540N , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 .

Keywords

 IPP080N06NG Datasheet  IPP080N06NG Datenblatt  IPP080N06NG RoHS  IPP080N06NG Distributor
 IPP080N06NG Application Notes  IPP080N06NG Component  IPP080N06NG Circuit  IPP080N06NG Schematic
 IPP080N06NG Equivalent  IPP080N06NG Cross Reference  IPP080N06NG Data Sheet  IPP080N06NG Fiche Technique

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