MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7805Q
AUIRF9540N ..BF1203
BF1204 ..BLF6G10LS-200RN
BLF6G10LS-260PRN ..BSC042NE7NS3G
BSC046N02KSG ..BSS84AKM
BSS84AKS ..BUK7109-75ATE
BUK714R1-40BT ..BUK9516-75B
BUK9518-30 ..BUZ900X4S
BUZ901 ..CED830G
CED83A3 ..CEP16N10L
CEP20A03 ..DMC2004VK
DMC2020USD ..DMP57D5UV
DMP58D0SV ..FDB050AN06A0
FDB060AN08A0 ..FDD5202P
FDD5353 ..FDMC5614P
FDMC6296 ..FDN361BN
FDN372S ..FDS3572
FDS3580 ..FDT86244
FDT86246 ..FQD10N20L
FQD11P06 ..FQPF33N10
FQPF33N10L ..FRM9240H
FRM9240R ..H07N65F
H10N60E ..HAT2020R
HAT2022R ..HR3N200
HRF3205 ..IPA60R600E6
IPA60R750E6 ..IPD040N03LG
IPD042P03L3G ..IPI60R125CP
IPI60R165CP ..IPP80N04S3-06
IPP80N04S3-H4 ..IRF142
IRF143 ..IRF630NS
IRF630S ..IRF740S
IRF741 ..IRF9395M
IRF9410 ..IRFF024
IRFF110 ..IRFN440
IRFN450 ..IRFR220
IRFR220A ..IRFS650A
IRFS654A ..IRFU9024
IRFU9024N ..IRL620A
IRL620S ..IRLU230A
IRLU2703 ..IXFH14N100Q2
IXFH14N60P ..IXFK44N80Q3
IXFK48N50 ..IXFP22N60P3
IXFP230N075T2 ..IXFV22N50PS
IXFV22N60P ..IXTA240N055T7
IXTA24P085T ..IXTH35N25MA
IXTH35N25MB ..IXTP160N075T
IXTP160N10T ..IXTR40P50P
IXTR48P20P ..JANSR2N7396
JANSR2N7398 ..KMB4D5DN60QA
KMB4D5NP55Q ..KU086N10P
KU2303D ..MTB25A04Q8
MTB25N04J3 ..MTN2306ZN3
MTN2310M3 ..MTP452L3
MTP452M3 ..NTB45N06
NTB45N06L ..NTP5863N
NTP5864N ..PHP6N10E
PHP6N50E ..PSMN069-100YS
PSMN070-200B ..RF1K49223
RF1K49224 ..RJK0397DPA
RJK03A4DPA ..RQJ0202VGDQA
RQJ0203WGDQA ..SDF120JAA-D
SDF120JAA-S ..SFS9Z34
SFT1341 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPI11N60C3
SPI11N60CFD ..SSG4920N
SSG4930N ..SSM3K329R
SSM3K333R ..SSQ6N60
SSR1N50 ..STD10N10LT4
STD10N10T4 ..STD95N4LF3
STD9NM50N ..STI200N6F3
STI21N65M5 ..STP18N10FI
STP18N55M5 ..STP60NF03L
STP60NF06 ..STV36N06
STV3NA80 ..TJ8S06M3L
TK07H90A ..TPC6003
TPC6004 ..TPCA8081
TPCA8082 ..UT2312
UT2316 ..WTL2622
WTM2310A ..ZXMP6A13F
ZXMP6A13G ..ZXMS6006SG
 
IPP080N06NG All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IPP080N06NG MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP080N06NG

Type of IPP080N06NG transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 214

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPP080N06NG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.008

Package: TO220

Equivalent transistors for IPP080N06NG

IPP080N06NG PDF doc:

1.1. ipb080n06ng_ipp080n06ng_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 14 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55 697DA5 + 5E @175 IPB080N06N G IPP080N06N G Parameter

2.1. ipp080n03l_rev2.0.pdf Size:728K _infineon

IPP080N06NG
IPP080N06NG
Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type IPP080N03L G IPB080N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 080N03L 080N03L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 C 50 A D GS C V =10 V, T =100 C 42 GS C V =4.5 V, T =25 C 48 GS C V =4.5 V, GS 34 T =100 C C I T =25 C 350 Pulsed drain current2) D,pulse C T =25 C 50 Avalanche current, single pulse3) I AS C E Avalanche energy, single pulse I =12 A, R =25 W 50 mJ AS D GS I =50 A,

5.1. ipp08cn10n_rev1.08.pdf Size:750K _infineon

IPP080N06NG
IPP080N06NG
$ " " $ " " $$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D:DE2?46 DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package PG?TO26 ? PG?TO262? PG?TO220? Marking 08CN10N 08CN10N 08CN10N !-C59@9 =-?5:3> 2E U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Unit U @?E:?F@FD 5C2:? 4FCC6?E 95 A D C U 68 C U 80 *F=D65 5C2:? 4FCC6?E2) D pulse C G2=2?496 6?6C8J D:?8=6 AF=D6 262 m AS D GS / D DS , 6G6CD6 5:@56 5v /dt dv /dt d /dt WD 6 kV/s U j max 20 V "2E6 D@FC46 G@=E286 ) GS U *@H6C 5:DD:A2E:@? 167 W tot C ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j stg $ 4=:>2E:4 42E68@CJ $

5.2. ipp08cne8n_rev1.07.pdf Size:772K _infineon

IPP080N06NG
IPP080N06NG
IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package G? O ? G? O ? G? O ? Marking CN N CN N CN N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit I T U @?E:?F@FD 5C2:? 4FCC6?E D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C E G2=2?496 6?6C8J D:?8=6 AF=D6 I R m D G I V / D D , 6G6CD6 5:@56 5v t v t i t WD k T U j m x V "2E6 D@FC46 G@=E286 ) G P T U *@H6C 5:DD:A2E:@? 1 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t $ 4=:>2E:4 42E68@CJ $( $ , 6G

5.3. ipb085n06lg_ipp085n06lg_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB085N06L G IPP085N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( & ! #** ( & ! Type Package Marking #* ( & ! ? O ? O ? ? ? ? ON ? ?1 Package ? #** ( & ! N ? O ? ?1 NN Marking Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 1 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55

5.4. ipp084n06l3_ipb084n06l3_rev2.23.pdf Size:683K _infineon

IPP080N06NG
IPP080N06NG
pe IPB081N06L3 G IPP084N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 1 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D R "2=@86? 7C66 244@C5:?8 E@ # Type #* ( & ! #** ( & ! Package G? O ? G? O ? Marking 1N 4N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit ) I @?E:?F@FD 5C2:? 4FCC6?E T U D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C I R 4 m G2=2?496 6?6C8J D:?8=6 AF=D64) E D G V !2E6 D@FC46 G@=E286 G P T U *@H6C 5:DD:A2E:@? 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t 1) $ -. 2?5 $ - ) FCC6?E :D =:>:E65 3J 3@?5H:C6 H:E9 2? R % 0 E96 49:A :D 23=6 E@ 42CCJ t C ) -66 7:8FC6 7@C >@C6 56E2:=65 :?7@C>2E:@?

5.5. ipp08cn10l_rev1[1].01.pdf Size:515K _infineon

IPP080N06NG
IPP080N06NG
IPP08CN10L G 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 8 m? DS(on),max Excellent gate charge x R product (FOM) DS(on) I 98 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPP08CN10L G Package PG-TO220-3 Marking 08CN10L Maximum ratings, at T =25 C, unless otherwise specified j Parameter SymboI Conditions VaIue Unit I T =25 C Continuous drain current 98 A D C T =100 C 70 C I T =25 C 392 Pulsed drain current2) D,pulse C E Avalanche energy, single pulse I =98 A, R =25 ? 254 mJ AS D GS I =95 A, V =80 V, D DS Reverse diode dv /dt dv /dt di /dt =100 A/s, 6 kV/s T =175 C j,max V 20 V Gate source voltage3) GS P T =25 C Power dissipation 167 W tot C T , T Operating and storage temperature -55 ... 175 C j

See also transistors datasheet: IPP06CN10NG , IPP070N06LG , IPP070N06NG , IPP070N08N3G , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G , IPP080N03LG , IRF9540N , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 .

Keywords

 IPP080N06NG Datasheet  IPP080N06NG Datenblatt  IPP080N06NG RoHS  IPP080N06NG Distributor
 IPP080N06NG Application Notes  IPP080N06NG Component  IPP080N06NG Circuit  IPP080N06NG Schematic
 IPP080N06NG Equivalent  IPP080N06NG Cross Reference  IPP080N06NG Data Sheet  IPP080N06NG Fiche Technique

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