MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3141
2SK3141-01 ..2SK3668
2SK3669 ..2SK523
2SK525 ..3N60K
3N60Z ..5N80
5N90 ..AP10N70W
AP10P10GH-HF ..AP2R803GH-HF
AP2R803GMT-HF ..AP4543GEH-HF
AP4543GEM-HF ..AP92T12GP-HF
AP92U03GH-HF ..AP98T07GP-HF
AP9918GJ ..APT10M11JVR
APT10M11LVR ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS170F
BS170P ..BSP75G
BSP75N ..BUK6510-75C
BUK652R0-30C ..BUK9107-55ATE
BUK9120-48TC ..BUZ41A
BUZ42 ..CED12N10L
CED12P10 ..CEP01N65
CEP01N6G ..CEUF640
CEV2306 ..DMP2066LSD
DMP2066LSN ..FCPF22N60NT
FCPF22N60NT ..FDD13AN06A0_F085
FDD14AN06LA0_F085 ..FDMA1032CZ
FDMA1032CZ ..FDMS86103L
FDMS86103L ..FDPF5N50NZF
FDPF5N50NZU ..FDS8958A_F085
FDS8958A_F085 ..FQB19N20L
FQB19N20L ..FQP8N80C
FQP8N80C ..FRL9130H
FRL9130R ..GWM120-0075X1-SL
GWM120-0075X1-SL ..HAT1040T
HAT1041T ..HAT3038R
HAT3040R ..IPA030N10N3G
IPA032N06N3G ..IPB80N03S4L-02
IPB80N03S4L-03 ..IPI100N04S3-03
IPI100N04S4-H2 ..IPP60R160C6
IPP60R165CP ..IRF1010EZL
IRF1010EZS ..IRF5806
IRF5810 ..IRF7321D2
IRF7322D1 ..IRF840A
IRF840A ..IRFBF20S
IRFBF30 ..IRFL014
IRFL014N ..IRFPE40
IRFPE50 ..IRFS453
IRFS4610 ..IRFU2405
IRFU2407 ..IRL3502S
IRL3705N ..IRLR8113
IRLR8256 ..IXFE39N90
IXFE44N50Q ..IXFK21N100F
IXFK21N100Q ..IXFN48N50
IXFN48N50Q ..IXFT68N20
IXFT69N30P ..IXTA140N055T2
IXTA140P05T ..IXTH20N60
IXTH20N60MA ..IXTN600N04T2
IXTN60N50L2 ..IXTQ32P20T
IXTQ36N30P ..IXTZ24N50MA
IXTZ24N50MB ..KHB9D0N90P1
KHB9D5N20D ..KTJ6131E
KTJ6131V ..NCV8402D
NCV8403 ..NTD4805N
NTD4806N ..NTTFS4932N
NTTFS4937N ..PHX3N40E
PHX3N50E ..PSMN2R0-60ES
PSMN2R0-60PS ..RFD12N06RLESM
RFD14N05 ..RJK0455DPB
RJK0456DPB ..RQK0606KGDQA
RQK0607AQDQS ..SDF1NA60JAA
SDF1NA60JAB ..SFW9610
SFW9614 ..SMK0825FZ
SMK0850F ..SML6045BN
SML6045HN ..SPP08N50C3
SPP08N80C3 ..SSH20N45
SSH20N45A ..SSM5P05FU
SSM5P15FU ..SSS5N90A
SSS6N55 ..STD13NM60N
STD14NM50N ..STE50N40
STE53NA50 ..STK12N05L
STK12N06L ..STP20NM60
STP20NM60FD ..STP75N3LLH6
STP75NF20 ..STW12N60
STW12NA50 ..TK12X60U
TK130F06K3 ..TPC8010-H
TPC8012-H ..TPCC8006-H
TPCC8007 ..UT3P06
UT40N03 ..ZVN3310A
ZVN3310F ..ZXMS6006SG
 
IPP080N06NG All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IPP080N06NG MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP080N06NG

Type of IPP080N06NG transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 214

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPP080N06NG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.008

Package: TO220

Equivalent transistors for IPP080N06NG

IPP080N06NG PDF doc:

1.1. ipb080n06ng_ipp080n06ng_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 14 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55 697DA5 + 5E @175 IPB080N06N G IPP080N06N G Parameter

2.1. ipp080n03l_rev2.0.pdf Size:728K _infineon

IPP080N06NG
IPP080N06NG
Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type IPP080N03L G IPB080N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 080N03L 080N03L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 C 50 A D GS C V =10 V, T =100 C 42 GS C V =4.5 V, T =25 C 48 GS C V =4.5 V, GS 34 T =100 C C I T =25 C 350 Pulsed drain current2) D,pulse C T =25 C 50 Avalanche current, single pulse3) I AS C E Avalanche energy, single pulse I =12 A, R =25 W 50 mJ AS D GS I =50 A,

5.1. ipp084n06l3_ipb084n06l3_rev2.23.pdf Size:683K _infineon

IPP080N06NG
IPP080N06NG
pe IPB081N06L3 G IPP084N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 1 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D R "2=@86? 7C66 244@C5:?8 E@ # Type #* ( & ! #** ( & ! Package G? O ? G? O ? Marking 1N 4N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit ) I @?E:?F@FD 5C2:? 4FCC6?E T U D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C I R 4 m G2=2?496 6?6C8J D:?8=6 AF=D64) E D G V !2E6 D@FC46 G@=E286 G P T U *@H6C 5:DD:A2E:@? 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t 1) $ -. 2?5 $ - ) FCC6?E :D =:>:E65 3J 3@?5H:C6 H:E9 2? R % 0 E96 49:A :D 23=6 E@ 42CCJ t C ) -66 7:8FC6 7@C >@C6 56E2:=65 :?7@C>2E:@?

5.2. ipb085n06lg_ipp085n06lg_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB085N06L G IPP085N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( & ! #** ( & ! Type Package Marking #* ( & ! ? O ? O ? ? ? ? ON ? ?1 Package ? #** ( & ! N ? O ? ?1 NN Marking Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 1 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55

5.3. ipp08cn10n_rev1.08.pdf Size:750K _infineon

IPP080N06NG
IPP080N06NG
$ " " $ " " $$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D:DE2?46 DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package PG?TO26 ? PG?TO262? PG?TO220? Marking 08CN10N 08CN10N 08CN10N !-C59@9 =-?5:3> 2E U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Unit U @?E:?F@FD 5C2:? 4FCC6?E 95 A D C U 68 C U 80 *F=D65 5C2:? 4FCC6?E2) D pulse C G2=2?496 6?6C8J D:?8=6 AF=D6 262 m AS D GS / D DS , 6G6CD6 5:@56 5v /dt dv /dt d /dt WD 6 kV/s U j max 20 V "2E6 D@FC46 G@=E286 ) GS U *@H6C 5:DD:A2E:@? 167 W tot C ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j stg $ 4=:>2E:4 42E68@CJ $

5.4. ipp08cn10l_rev1[1].01.pdf Size:515K _infineon

IPP080N06NG
IPP080N06NG
IPP08CN10L G 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 8 m? DS(on),max Excellent gate charge x R product (FOM) DS(on) I 98 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPP08CN10L G Package PG-TO220-3 Marking 08CN10L Maximum ratings, at T =25 C, unless otherwise specified j Parameter SymboI Conditions VaIue Unit I T =25 C Continuous drain current 98 A D C T =100 C 70 C I T =25 C 392 Pulsed drain current2) D,pulse C E Avalanche energy, single pulse I =98 A, R =25 ? 254 mJ AS D GS I =95 A, V =80 V, D DS Reverse diode dv /dt dv /dt di /dt =100 A/s, 6 kV/s T =175 C j,max V 20 V Gate source voltage3) GS P T =25 C Power dissipation 167 W tot C T , T Operating and storage temperature -55 ... 175 C j

5.5. ipp08cne8n_rev1.07.pdf Size:772K _infineon

IPP080N06NG
IPP080N06NG
IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package G? O ? G? O ? G? O ? Marking CN N CN N CN N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit I T U @?E:?F@FD 5C2:? 4FCC6?E D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C E G2=2?496 6?6C8J D:?8=6 AF=D6 I R m D G I V / D D , 6G6CD6 5:@56 5v t v t i t WD k T U j m x V "2E6 D@FC46 G@=E286 ) G P T U *@H6C 5:DD:A2E:@? 1 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t $ 4=:>2E:4 42E68@CJ $( $ , 6G

See also transistors datasheet: IPP06CN10NG , IPP070N06LG , IPP070N06NG , IPP070N08N3G , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G , IPP080N03LG , IRF9540N , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 .

Keywords

 IPP080N06NG Datasheet  IPP080N06NG Datenblatt  IPP080N06NG RoHS  IPP080N06NG Distributor
 IPP080N06NG Application Notes  IPP080N06NG Component  IPP080N06NG Circuit  IPP080N06NG Schematic
 IPP080N06NG Equivalent  IPP080N06NG Cross Reference  IPP080N06NG Data Sheet  IPP080N06NG Fiche Technique

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