MOSFET Datasheet



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IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
IPP080N06NG MOSFET DataSheet. BJT, Power MOSFET, IGBT, IC Catalog
 

IPP080N06NG MOSFET (IC) Datasheet. Cross Reference Search. IPP080N06NG Equivalent

Type Designator: IPP080N06NG

Type of IPP080N06NG transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 214

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPP080N06NG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.008

Package: TO220

Equivalent transistors for IPP080N06NG - Cross-Reference Search

 

IPP080N06NG PDF doc:

1.1. ipb080n06ng_ipp080n06ng_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 14 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55 697DA5 + 5E @175 IPB080N06N G IPP080N06N G Parameter

2.1. ipp080n03l_rev2.0.pdf Size:728K _infineon

IPP080N06NG
IPP080N06NG
Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type IPP080N03L G IPB080N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 080N03L 080N03L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 C 50 A D GS C V =10 V, T =100 C 42 GS C V =4.5 V, T =25 C 48 GS C V =4.5 V, GS 34 T =100 C C I T =25 C 350 Pulsed drain current2) D,pulse C T =25 C 50 Avalanche current, single pulse3) I AS C E Avalanche energy, single pulse I =12 A, R =25 W 50 mJ AS D GS I =50 A,

5.1. ipp08cne8n_rev1.07.pdf Size:772K _infineon

IPP080N06NG
IPP080N06NG
IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package G? O ? G? O ? G? O ? Marking CN N CN N CN N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit I T U @?E:?F@FD 5C2:? 4FCC6?E D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C E G2=2?496 6?6C8J D:?8=6 AF=D6 I R m D G I V / D D , 6G6CD6 5:@56 5v t v t i t WD k T U j m x V "2E6 D@FC46 G@=E286 ) G P T U *@H6C 5:DD:A2E:@? 1 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t $ 4=:>2E:4 42E68@CJ $( $ , 6G

5.2. ipp08cn10n_rev1.08.pdf Size:750K _infineon

IPP080N06NG
IPP080N06NG
$ " " $ " " $$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D:DE2?46 DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package PG?TO26 ? PG?TO262? PG?TO220? Marking 08CN10N 08CN10N 08CN10N !-C59@9 =-?5:3> 2E U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Unit U @?E:?F@FD 5C2:? 4FCC6?E 95 A D C U 68 C U 80 *F=D65 5C2:? 4FCC6?E2) D pulse C G2=2?496 6?6C8J D:?8=6 AF=D6 262 m AS D GS / D DS , 6G6CD6 5:@56 5v /dt dv /dt d /dt WD 6 kV/s U j max 20 V "2E6 D@FC46 G@=E286 ) GS U *@H6C 5:DD:A2E:@? 167 W tot C ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j stg $ 4=:>2E:4 42E68@CJ $

5.3. ipb085n06lg_ipp085n06lg_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB085N06L G IPP085N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( & ! #** ( & ! Type Package Marking #* ( & ! ? O ? O ? ? ? ? ON ? ?1 Package ? #** ( & ! N ? O ? ?1 NN Marking Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 1 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55

5.4. ipp08cn10l_rev1[1].01.pdf Size:515K _infineon

IPP080N06NG
IPP080N06NG
IPP08CN10L G 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 8 m? DS(on),max Excellent gate charge x R product (FOM) DS(on) I 98 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPP08CN10L G Package PG-TO220-3 Marking 08CN10L Maximum ratings, at T =25 C, unless otherwise specified j Parameter SymboI Conditions VaIue Unit I T =25 C Continuous drain current 98 A D C T =100 C 70 C I T =25 C 392 Pulsed drain current2) D,pulse C E Avalanche energy, single pulse I =98 A, R =25 ? 254 mJ AS D GS I =95 A, V =80 V, D DS Reverse diode dv /dt dv /dt di /dt =100 A/s, 6 kV/s T =175 C j,max V 20 V Gate source voltage3) GS P T =25 C Power dissipation 167 W tot C T , T Operating and storage temperature -55 ... 175 C j

5.5. ipp084n06l3_ipb084n06l3_rev2.23.pdf Size:683K _infineon

IPP080N06NG
IPP080N06NG
pe IPB081N06L3 G IPP084N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 1 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D R "2=@86? 7C66 244@C5:?8 E@ # Type #* ( & ! #** ( & ! Package G? O ? G? O ? Marking 1N 4N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit ) I @?E:?F@FD 5C2:? 4FCC6?E T U D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C I R 4 m G2=2?496 6?6C8J D:?8=6 AF=D64) E D G V !2E6 D@FC46 G@=E286 G P T U *@H6C 5:DD:A2E:@? 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t 1) $ -. 2?5 $ - ) FCC6?E :D =:>:E65 3J 3@?5H:C6 H:E9 2? R % 0 E96 49:A :D 23=6 E@ 42CCJ t C ) -66 7:8FC6 7@C >@C6 56E2:=65 :?7@C>2E:@?

See also transistors datasheet: IPP06CN10NG , IPP070N06LG , IPP070N06NG , IPP070N08N3G , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G , IPP080N03LG , IRF9540N , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 .

Keywords

 IPP080N06NG Datasheet  IPP080N06NG Design IPP080N06NG MOSFET IPP080N06NG Power
 IPP080N06NG RoHS Compliant IPP080N06NG Service IPP080N06NG Triacs IPP080N06NG Semiconductor
 IPP080N06NG Database IPP080N06NG Innovation IPP080N06NG IC IPP080N06NG Electricity

 

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