MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
  IPP080N06NG
 
IPP080N06NG
  IPP080N06NG
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF400N80Z
FCPF600N60Z ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA905P
FDMA908PZ ..FDMS8570SDC
FDMS86101 ..FDPF20N50FT
FDPF20N50T ..FDT86256
FDU3N40 ..FQD17P06
FQD18N20V2 ..FQU11P06
FQU12N20 ..FSF9150D
FSF9150R ..H7N0307AB
H7N0307LD ..HAT2170N
HAT2171H ..HUF76107D3S
HUF76107P3 ..IPB097N08N3G
IPB100N04S2-04 ..IPD50N06S2L-14
IPD50N06S4-09 ..IPP04CN10NG
IPP04N03LBG ..IPW60R190E6
IPW60R199CP ..IRF3707ZS
IRF3708 ..IRF6674
IRF6678 ..IRF7663
IRF7665S2 ..IRF9Z30
IRF9Z32 ..IRFHM830D
IRFHM831 ..IRFP264
IRFP2907 ..IRFR9214
IRFR9220 ..IRFS9622
IRFS9623 ..IRFY9240
IRFY9240C ..IRLI630A
IRLI630G ..IRLZ44NL
IRLZ44NS ..IXFH32N50Q
IXFH340N075T2 ..IXFM13N50
IXFM13N80 ..IXFR30N60P
IXFR32N100P ..IXFX320N17T2
IXFX32N100P ..IXTA90N055T2
IXTA90N075T2 ..IXTH76N25T
IXTH76P10T ..IXTP3N60P
IXTP42N15T ..IXTT96N15P
IXTT96N20P ..KF5N50DZ
KF5N50F ..KP509B9
KP509V9 ..MEM610
MEM614 ..MTC380Q8
MTC4501Q8 ..MTN4410V8
MTN4424Q8 ..NDB7051L
NDB7052 ..NTD5865N
NTD5865NL ..NX3008NBK
NX3008NBKS ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFF60P06
RFF70N06 ..RJK1212DNS
RJK1212DPA ..RSF015N06
RSH065N06 ..SDF220
SDF230JAA ..SFW9510
SFW9520 ..SMK0460F
SMK0460I ..SML601R3CN
SML601R3GN ..SPD06N60C3
SPD06N80C3 ..SSG4502C
SSG4502CE ..SSM3K15AMFV
SSM3K15CT ..SSP7434N
SSP7436N ..STB6N52K3
STB6NK60Z ..STD60NF55L-1
STD60NF55LA ..STG8205
STG8209 ..STM4433A
STM4435 ..STP21N05LFI
STP21N06L ..STP6NK90Z
STP70L60 ..STT3520C
STT3585 ..STW12N60
STW12NA50 ..TK13P25D
TK14A45D ..TPC8027
TPC8028 ..TPCC8076
TPCC8084 ..UT4446
UT45N03 ..ZVN4306G
ZVN4306GV ..ZXMS6006SG
 
IPP080N06NG All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IPP080N06NG MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP080N06NG

Type of IPP080N06NG transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 214

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 80

Maximum junction temperature (Tj), °C:

Rise Time of IPP080N06NG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.008

Package: TO220

Equivalent transistors for IPP080N06NG

IPP080N06NG PDF doc:

1.1. ipb080n06ng_ipp080n06ng_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB080N06N G IPP080N06N G Power-Transistor Product Summary Features V D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@<931C9?>B R 7 7 m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C >?A=1< <5E5< I D P S ?@5A1C9>7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( ( ! #** ( ( ! Package ? O ? ? ? O ? ?1 Marking N N N N Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 14 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55 697DA5 + 5E @175 IPB080N06N G IPP080N06N G Parameter

2.1. ipp080n03l_rev2.0.pdf Size:728K _infineon

IPP080N06NG
IPP080N06NG
Type IPP080N03L G IPB080N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 8.0 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type IPP080N03L G IPB080N03L G Package PG-TO220-3-1 PG-TO263-3 Marking 080N03L 080N03L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 C 50 A D GS C V =10 V, T =100 C 42 GS C V =4.5 V, T =25 C 48 GS C V =4.5 V, GS 34 T =100 C C I T =25 C 350 Pulsed drain current2) D,pulse C T =25 C 50 Avalanche current, single pulse3) I AS C E Avalanche energy, single pulse I =12 A, R =25 W 50 mJ AS D GS I =50 A,

5.1. ipp08cn10n_rev1.08.pdf Size:750K _infineon

IPP080N06NG
IPP080N06NG
$ " " $ " " $$ " " $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 100 V DS R ( 492??6= ?@C>2= =6G6= 8.2 m - @? >2I .) R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 95 A D R /6CJ =@H @? C6D:DE2?46 DS(on) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package PG?TO26 ? PG?TO262? PG?TO220? Marking 08CN10N 08CN10N 08CN10N !-C59@9 =-?5:3> 2E U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Unit U @?E:?F@FD 5C2:? 4FCC6?E 95 A D C U 68 C U 80 *F=D65 5C2:? 4FCC6?E2) D pulse C G2=2?496 6?6C8J D:?8=6 AF=D6 262 m AS D GS / D DS , 6G6CD6 5:@56 5v /dt dv /dt d /dt WD 6 kV/s U j max 20 V "2E6 D@FC46 G@=E286 ) GS U *@H6C 5:DD:A2E:@? 167 W tot C ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j stg $ 4=:>2E:4 42E68@CJ $

5.2. ipp08cne8n_rev1.07.pdf Size:772K _infineon

IPP080N06NG
IPP080N06NG
IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G 2 Power-Transistor Product Summary Features V D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D:DE2?46 R D n) R U @A6C2E:?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@? R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@? R #2=@86? 7C66 244@C5:?8 E@ $ Type $* ( ( " $*$ ( ( " $** ( ( " Package G? O ? G? O ? G? O ? Marking CN N CN N CN N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit I T U @?E:?F@FD 5C2:? 4FCC6?E D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C E G2=2?496 6?6C8J D:?8=6 AF=D6 I R m D G I V / D D , 6G6CD6 5:@56 5v t v t i t WD k T U j m x V "2E6 D@FC46 G@=E286 ) G P T U *@H6C 5:DD:A2E:@? 1 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t $ 4=:>2E:4 42E68@CJ $( $ , 6G

5.3. ipb085n06lg_ipp085n06lg_rev1.05.pdf Size:739K _infineon

IPP080N06NG
IPP080N06NG
IPB085N06L G IPP085N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R m , ?> =1G ,' E5AB9?> P ( 381>>5< 5>81>35=5>C 7 C5=@5A1CDA5 P E1<1>385 A1C54 P *2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #* ( & ! #** ( & ! Type Package Marking #* ( & ! ? O ? O ? ? ? ? ON ? ?1 Package ? #** ( & ! N ? O ? ?1 NN Marking Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit 1) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S 7 C ) I *D 3DAA5>C T S D p l e C E E1<1>385 5>5A7H B9>7<5 @D 1 t t C T T ) @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #( # 1) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ,55

5.4. ipp084n06l3_ipb084n06l3_rev2.23.pdf Size:683K _infineon

IPP080N06NG
IPP080N06NG
pe IPB081N06L3 G IPP084N06L3 G 3 Power-Transistor Product Summary Features V D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 1 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CD I D R I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n) R ( 492??6= =@8:4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E 1) R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?D R "2=@86? 7C66 244@C5:?8 E@ # Type #* ( & ! #** ( & ! Package G? O ? G? O ? Marking 1N 4N Maximum ratings, 2E T U F?=6DD @E96CH:D6 DA64:7:65 j Parameter Symbol Conditions Value Unit ) I @?E:?F@FD 5C2:? 4FCC6?E T U D C T U C I T U *F=D65 5C2:? 4FCC6?E ) D p l e C I R 4 m G2=2?496 6?6C8J D:?8=6 AF=D64) E D G V !2E6 D@FC46 G@=E286 G P T U *@H6C 5:DD:A2E:@? 7 t t C T T ) A6C2E:?8 2?5 DE@C286 E6>A6C2EFC6 U j t 1) $ -. 2?5 $ - ) FCC6?E :D =:>:E65 3J 3@?5H:C6 H:E9 2? R % 0 E96 49:A :D 23=6 E@ 42CCJ t C ) -66 7:8FC6 7@C >@C6 56E2:=65 :?7@C>2E:@?

5.5. ipp08cn10l_rev1[1].01.pdf Size:515K _infineon

IPP080N06NG
IPP080N06NG
IPP08CN10L G 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 8 m? DS(on),max Excellent gate charge x R product (FOM) DS(on) I 98 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPP08CN10L G Package PG-TO220-3 Marking 08CN10L Maximum ratings, at T =25 C, unless otherwise specified j Parameter SymboI Conditions VaIue Unit I T =25 C Continuous drain current 98 A D C T =100 C 70 C I T =25 C 392 Pulsed drain current2) D,pulse C E Avalanche energy, single pulse I =98 A, R =25 ? 254 mJ AS D GS I =95 A, V =80 V, D DS Reverse diode dv /dt dv /dt di /dt =100 A/s, 6 kV/s T =175 C j,max V 20 V Gate source voltage3) GS P T =25 C Power dissipation 167 W tot C T , T Operating and storage temperature -55 ... 175 C j

See also transistors datasheet: IPP06CN10NG , IPP070N06LG , IPP070N06NG , IPP070N08N3G , IPP072N10N3G , IPP075N15N3G , IPP076N12N3G , IPP080N03LG , IRF9540N , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , IPP096N03LG , IPP100N04S4-H2 .

Keywords

 IPP080N06NG Datasheet  IPP080N06NG Datenblatt  IPP080N06NG RoHS  IPP080N06NG Distributor
 IPP080N06NG Application Notes  IPP080N06NG Component  IPP080N06NG Circuit  IPP080N06NG Schematic
 IPP080N06NG Equivalent  IPP080N06NG Cross Reference  IPP080N06NG Data Sheet  IPP080N06NG Fiche Technique

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