IPP096N03LG MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP096N03LG

Type of IPP096N03LG transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 42

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35

Maximum junction temperature (Tj), °C:

Rise Time of IPP096N03LG transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0096

Package: TO220

Equivalent transistors for IPP096N03LG

IPP096N03LG PDF documents for downloads:

1.1. ipp096n03l_rev2.0.pdf Size:617K _infineon

pe %% # ! % # ! % (>.;?6?@<> %><1A0@ 'A::.>E Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- m - @? >2H Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C Q ( 492??6= =@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?D Q "2=@86? 7B66 244@B5:?8 D@ # Type #** ( & ! #* ( & ! Package G? O ? ?1 G? O ? Marking N N ".D6:A: >.@6;4? 2D T E?=6CC @D96BG:C6 CA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Unit @?D:?E@EC 5B2:? 4EBB6?D / T D G C / T G C / T G C / G T C T 4 *E=C65 5B2:? 4EBB6?D ) D p l e C T F2=2?496 4EBB6?D C:?8=6 AE=C6 ) C F2=2?496 6?6B8I C:?8=6 AE=C6 4 m D G / D D , 6F6BC6 5:@56 5v t v t t WC k µ T j m x !2D6 C@EB46 F@=D286 ± G 1) $ -. 2?5 $ - , 6F A286  %% # ! % # ! ".D6:A: >.@6;4? 2D T E?=6CC @D96BG:C6 CA64:7:65 j Parameter Symb?I C?nditi?ns VaIue Un

5.1. ipp093n06n3_ipb093n06n3_rev1.2.pdf Size:687K _infineon

pe IPB090N06N3 G IPP093N06N3 G ™ 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35<<5>C 71C5 381A75 G R @A?4D3C ( & D n) I D P .5AH A5B9BC1>35 R D n) P ' 381>>5< >?A=1< <5E5< P E1<1>385 A1C54 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?>B P )2 6A55 @<1C9>7 + ?", 3?=@<91>C P "1 6A55 133?A49>7 C? # Type #) ' ' ! #)) ' ' ! Package G? O ? G? O ? Marking N N N N Maximum ratings, 1C T S D><5BB ?C85AF9B5 B@5396954 j Parameter Symbol Conditions Value Unit ) I ?>C9>D?DB 4A19> 3DAA5>C T S D C T S C I T S )D 3DAA5>C ) D p l e C E E1<1>385 5>5A7H B9>7<5 @D 71 t t C T T ( @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #' # 1) $ ,- 1>4 $ , ) DAA5>C 9B <9=9C54 2H 2?>4F9A5 F9C8 1> R % / C85 389@ 9B 12<5 C? 31AAH t C ) ,55 697DA5 4) 5E935 ?

See also transistors datasheet: IPP080N03LG , IPP080N06NG , IPP084N06L3G , IPP085N06LG , IPP086N10N3G , IPP08CN10LG , IPP08CN10NG , IPP093N06N3G , 75321P , IPP100N04S4-H2 , IPP100N08N3G , IPP110N06LG , IPP110N20N3G , IPP111N15N3G , IPP114N03LG , IPP114N12N3G , IPP120N04S4-01 .

Keywords