IPP120N04S4-02 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IPP120N04S4-02

Type of IPP120N04S4-02 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 158

Maximum drain-source voltage |Uds|, V: 40V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 120

Maximum junction temperature (Tj), °C:

Rise Time of IPP120N04S4-02 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0021

Package: PGTO22031

Equivalent transistors for IPP120N04S4-02

IPP120N04S4-02 PDF documents for downloads:

1.1. ipp120n04s4-01_ipb120n04s4-01_ipi120n04s4-01.pdf Size:159K _infineon

IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.5 m? DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB120N04S4-01 PG-TO263-3-2 4N0401 IPI120N04S4-01 PG-TO262-3-1 4N0401 IPP120N04S4-01 PG-TO220-3-1 4N0401 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 120 A Continuous drain current1) D C GS T =100°C, V =10V2) 120 C GS I T =25°C 480 Pulsed drain current2) D,pulse C I =60A 750 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 120 A AS V - Gate source voltage ±20 V GS P T =25°C Power dissipation 188 W tot C T , T - Operating and storage temperature -55 ... +175 °C j stg

1.2. ipp120n04s3_ipb120n04s3_ipi120n04s3-02.pdf Size:191K _infineon

IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R (SMD version) 2.0 m? DS(on),max I 120 A D Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB120N04S3-02 PG-TO263-3-2 3PN0402 IPI120N04S3-02 PG-TO262-3-1 3PN0402 IPP120N04S3-02 PG-TO220-3-1 3PN0402 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C, V =10 V 120 A Continuous drain current1) D C GS T =100 °C, C 120 V =10 V2) GS I T =25 °C 480 Pulsed drain current2) D,pulse C E I =80 A Avalanche energy, single pulse 1880 mJ AS D V Gate source voltage ±20 V GS P T =25 °C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC

2.1. ipb120n06ng_ipp120n06ng.pdf Size:737K _infineon

IPB120N06N G IPP120N06N G ™ Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 11 7 m + >= < 0F +& D4@A8>= O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; I 7 D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B O "0;>64= 5@44 022>@38=6 B> # Type #)) ' ' ! #) ' ' ! Package ? O ? ?1 ? O ? ? Marking 1 N N 1 N N Maximum ratings, 0B T R C=;4AA >B74@E8A4 A?4285843 j Parameter Symbol Conditions Value Unit I T R >=B8=C>CA 3@08= 2C@@4=B 7 D C T R C 1) I )C;A43 3@08= 2C@@4=B T R D p l e C E D0;0=274 4=4@6G A8=6;4 ?C;A4 I R m D G I V - D D * 4D4@A4 38>34 3v t v t i t TA k µ T R j m x !0B4 A>C@24 D>;B064 V ± G P T R )>E4@ 38AA8?0B8>= 1 t t C T T ( ?4@0B8=6 0=3 AB>@064 B4< ?4@0BC@4 R j t # 2;8< 0B82 20B46>@G #' # 1) +44 586C@4 * 4D ?064 IPB120N06N G IPP120N06N G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristi

2.2. ipp120n06s4_ipb120n06s4_ipi120n06s4-02.pdf Size:170K _infineon

IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.4 m? DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB120N06S4-02 PG-TO263-3-2 4N0602 IPI120N06S4-02 PG-TO262-3-1 4N0602 IPP120N06S4-02 PG-TO220-3-1 4N0602 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 120 A Continuous drain current1) D C GS T =100°C, V =10V2) 120 C GS I T =25°C 480 Pulsed drain current2) D,pulse C I =60A 560 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse 120 A AS V Gate source voltage ±20 V GS P T =25°C Power dissipation 188 W tot C T , T Operating and storage temperature -55 ... +175 °C j stg IEC c

2.3. ipp120n06s4_ipb120n06s4_ipi120n06s4-03.pdf Size:170K _infineon

IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m? DS(on),max I 120 A D Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPB120N06S4-03 PG-TO263-3-2 4N0603 IPI120N06S4-03 PG-TO262-3-1 4N0603 IPP120N06S4-03 PG-TO220-3-1 4N0603 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25°C, V =10V 120 A Continuous drain current1) D C GS T =100°C, V =10V2) 120 C GS I T =25°C 480 Pulsed drain current2) D,pulse C I =60A 392 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 120 A AS V - Gate source voltage ±20 V GS P T =25°C Power dissipation 167 W tot C T , T - Operating and storage temperature -55 ... +175 °C j

See also transistors datasheet: IPP100N04S4-H2 , IPP100N08N3G , IPP110N06LG , IPP110N20N3G , IPP111N15N3G , IPP114N03LG , IPP114N12N3G , IPP120N04S4-01 , 2SK170 , IPP120N06NG , IPP120N06S4-02 , IPP120N06S4-H1 , IPP126N10N3G , IPP12CN10LG , IPP12CN10NG , IPP139N08N3G , IPP147N03LG .

Keywords