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IPP60R125CP MOSFET (IC) Datasheet. Cross Reference Search. IPP60R125CP Equivalent

Type Designator: IPP60R125CP

Type of IPP60R125CP transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 208

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 25

Maximum junction temperature (Tj), °C:

Rise Time of IPP60R125CP transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.125

Package: TO220

IPP60R125CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPP60R125CP PDF doc:

1.1. ipp60r125cp_rev2.2.pdf Size:571K _infineon

IPP60R125CP
IPP60R125CP

IPP60R125CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,I / xQg ON 0.125 DS(on) max V 2 AIG6 ADL <6I: 8=6G<: 5 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound PG?TO220 ::7!"% # 4= =;

3.1. ipp60r190c62.1.pdf Size:1819K _infineon

IPP60R125CP
IPP60R125CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the

3.2. ipp60r190e6_2_0.pdf Size:1150K _infineon

IPP60R125CP
IPP60R125CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final Industrial & Multimarket 600V CoolMOS™ E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principl

3.3. ipp60r199cp_rev2.2a.pdf Size:552K _infineon

IPP60R125CP
IPP60R125CP

IPP60R199CP C??IMOS® #:A0< &<,9=4=>:< #<:/?.> %?88,I / xQg ON 0.199 DS(on) max V 2 AIG6 ADL <6I: 8=6G<: nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound PG?TO220 ::7!"% # 4= =;0.4

3.4. ipp60r160c6_2_1.pdf Size:1723K _infineon

IPP60R125CP
IPP60R125CP

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (

3.5. ipp60r165cp_rev2.2.pdf Size:574K _infineon

IPP60R125CP
IPP60R125CP

IPP60R165CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,I / xQg ON 0.165 DS(on) max V 2 AIG6 ADL <6I: 8=6G<: 9 nC g typ V "MIG:B: 9K 9I G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" V -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI; Halogen free mold compound PG?TO220 ::7!"% # 4= =;0

See also transistors datasheet: IPP50R399CP , IPP50R520CP , IPP530N15N3G , IPP600N25N3G , IPP60R099C6 , IPP60R099CP , IPP60R099CPA , IPP60R125C6 , IRFZ44V , IPP60R160C6 , IPP60R165CP , IPP60R190C6 , IPP60R190E6 , IPP60R199CP , IPP60R250CP , IPP60R280C6 , IPP60R280E6 .

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