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SPB02N60C3 MOSFET (IC) Datasheet. Cross Reference Search. SPB02N60C3 Equivalent

Type Designator: SPB02N60C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 25

Maximum Drain-Source Voltage |Vds|, V: 600

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 1.8

Maximum Junction Temperature (Tj), °C:

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 3

Package: D2PAK_TO263

SPB02N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SPB02N60C3 PDF doc:

1.1. spb02n60c3_rev.2.4.pdf Size:545K _infineon

SPB02N60C3
SPB02N60C3

VDS Tjmax ? • • G • • • G

2.1. spb02n60s5_rev.2.4.pdf Size:343K _infineon

SPB02N60C3
SPB02N60C3

SPB02N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 3 ? • New revolutionary high voltage technology ID 1.8 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPB02N60S5 PG-TO263 Q67040-S4212 02N60S5 Maximum Ratings Parameter Symbol Value Un

See also transistors datasheet: SPA15N65C3 , SPA16N50C3 , SPA17N80C3 , SPA20N60C3 , SPA20N60CFD , SPA20N65C3 , SPA21N50C3 , SPB80N06S-08 , J112 , SPB02N60S5 , SPB03N60C3 , SPB03N60S5 , SPB04N50C3 , SPB04N60C3 , SPB04N60S5 , SPB07N60C3 , SPB07N60S5 .

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