SPB16N50C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPB16N50C3

Type of SPB16N50C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 160

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 16

Maximum junction temperature (Tj), °C:

Rise Time of SPB16N50C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.28

Package: D2PAK_(TO263)

Equivalent transistors for SPB16N50C3

SPB16N50C3 PDF documents for downloads:

1.1. spb16n50c3_rev.2.4.pdf Size:1347K _infineon

SPB16N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.28 ? • New revolutionary high voltage technology ID 16 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current ID A TC = 25 °C 16 TC = 100 °C 10 Pulsed drain current, tp limited by Tjmax ID puls 48 A Avalanche energy, single pulse EAS 460 mJ ID=8, VDD=50V EAR Avalanche energy, repetitive tAR limited by Tjmax2) 0.64 ID=16A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax IAR 16 A Gate source voltage VGS ±20 V VGS Gate source voltage AC (f >1Hz) ±30 Power dissipation, TC = 25°C Ptot 160 W Operating and storage temperature Tj , Tstg -55...+150 °C °C 6) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.4 Page 1 2005-11-07 SPB16N50C3 Maxi

See also transistors datasheet: SPB07N60C3 , SPB07N60S5 , SPB08P06PG , SPB100N03S2-03G , SPB10N10LG , SPB11N60C3 , SPB11N60S5 , SPB12N50C3 , 3SK45 , SPB17N80C3 , SPB18P06PG , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 , SPB80N10LG , SPB80P06PG , SPD01N60C3 .

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