SPI08N50C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPI08N50C3

Type of SPI08N50C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C:

Rise Time of SPI08N50C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.00065

Package: I2PAK_(TO262)

Equivalent transistors for SPI08N50C3

SPI08N50C3 PDF documents for downloads:

1.1. spp08n50c3_spi08n50c3_spa08n50c3_rev.2.91.pdf Size:726K _infineon

SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 ? • New revolutionary high voltage technology ID 7.6 A • Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 3 • Ultra low effective capacitances 2 1 P-TO220-3-31 • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP08N50C3 PG-TO220 Q67040-S4567 08N50C3 SPI08N50C3 PG-TO262 Q67040-S4568 08N50C3 SPA08N50C3 PG-TO220FP SP000216306 08N50C3 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current ID A TC = 25 °C 7.6 7.61) TC = 100 °C 4.6 4.61) Pulsed drain current, tp limited by Tjmax ID puls 22.8 22.8 A Avalanche energy, single pulse EAS 230 230 mJ ID=5.5A, VDD=50V EAR Avalanche energy, repetitive tAR limited by Tjmax2) 0.5 0.5 ID=7.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax IAR 7.6 7.6 A

4.1. spi08n80c3_rev2.91.pdf Size:463K _infineon

SPI08N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS • New revolutionary high voltage technology R @ Tj = 25°C 0.65 ? DS(on)max • Extreme dv/dt rated Q 45 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO262-3 • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Type Package Marking SPI08N80C3 PG-TO262-3 08N80C3 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C Continuous drain current 8 A D C T =100 °C 5.1 C I T =25 °C 24 Pulsed drain current2) D,pulse C E I =1.6 A, V =50 V Avalanche energy, single pulse 340 mJ AS D DD 2),3) E I =8 A, V =50 V 0.2 Avalanche energy, repetitive t AR D DD AR 2),3) I 8 Avalanche current, repetitive t A AR

See also transistors datasheet: SPD30P06PG , SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , SPI80N06S-08 , SPI07N60C3 , SPI07N60S5 , SPI07N65C3 , IRFZ44 , SPI08N80C3 , SPI11N60C3 , SPI11N60CFD , SPI11N60S5 , SPI11N65C3 , SPI12N50C3 , SPI15N60C3 , SPI15N60CFD .

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