SPI11N60C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPI11N60C3

Type of SPI11N60C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 11

Maximum junction temperature (Tj), °C:

Rise Time of SPI11N60C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.00038

Package: I2PAK_(TO262)

Equivalent transistors for SPI11N60C3

SPI11N60C3 PDF documents for downloads:

1.1. spi11n60cfd_rev.2.6.pdf Size:937K _infineon

SPI11N60CFD C??I MOS P?wer Transist?r VDS @ Tjmax 650 V Feature RDS(on) 0.44 • New revolutionary high voltage technology ID 11 A • Ultra low gate charge PG-TO262 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge 0) Qualified for industrial grade applications according to JEDEC Type Package Pb free Marking SPI11N60CFD PG-TO262 Yes 11N60CFD Maximum Ratings Parameter Symb?I VaIue Unit A Continuous drain current ID TC = 25 °C 11 TC = 100 °C 7 28 Pulsed drain current, tp limited by Tjmax ID puls 340 mJ Avalanche energy, single pulse EAS ID = 5.5 A, VDD = 50 V 1) 0.6 Avalanche energy, repetitive tAR limited by Tjmax EAR ID = 11 A, VDD = 50 V 11 A Avalanche current, repetitive tAR limited by Tjmax IAR Reverse diode dv/dt dv/dt 40 V/ns IS=11A, VDS=480V, Tj=125°C V Gate source voltage VGS 20 Gate source voltage AC (f >1Hz) VGS 30 125 W Power dissipati

1.2. spp11n60c3_spi11n60c3_spa11n60c3_e8185_rev.3.2.pdf Size:654K _infineon

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 ? • New revolutionary high voltage technology ID 11 A • Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 3 • High peak current capability 2 1 P-TO220-3-31 • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP11N60C3 PG-TO220 Q67040-S4395 11N60C3 SPI11N60C3 PG-TO262 Q67042-S4403 11N60C3 SPA11N60C3 PG-TO220 11N60C3 11N60C3 Q67040-S4408 FP Q67040-S4408 PG-TO220 11N60C3 SPA11N60C3E8185 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current ID A TC = 25 °C 11 111) TC = 100 °C 7 71) Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse EAS 340 340 mJ ID=5.5A, VDD=50V EAR Avalanche energy, repetitive tAR limited by Tjmax2) 0.6 0.6 ID=11A, VDD=50V Av

2.1. spp11n60s5_spi11n60s5.pdf Size:1105K _infineon

SPP11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.38 ? • New revolutionary high voltage technology ID 11 A • Ultra low gate charge PG-TO262 PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated • Ultra low effective capacitances 3 2 1 • Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 11N60S5 SPP11N60S5 PG-TO220 Q67040-S4198 SPI11N60S5 PG-TO262 Q67040-S4338 11N60S5 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current ID TC = 25 °C 11 TC = 100 °C 7 22 Pulsed drain current, tp limited by Tjmax ID puls 340 mJ Avalanche energy, single pulse EAS ID = 5.5 A, VDD = 50 V EAR 0.6 Avalanche energy, repetitive tAR limited by Tjmax1) ID = 11 A, VDD = 50 V 11 A Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS V ±20 VGS Gate source voltage AC (f >1Hz) ±30 Power dissipation, TC = 25°C Ptot 125 W °C Operating and storage temperature Tj , Tstg -55... +15

2.2. spp11n60s5_spi11n60s5_rev.2.7.pdf Size:472K _infineon

SPP11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.38 ? • New revolutionary high voltage technology ID 11 A • Ultra low gate charge PG-TO262 PG-TO220 • Periodic avalanche rated 2 • Extreme dv/dt rated • Ultra low effective capacitances 3 2 1 • Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 11N60S5 SPP11N60S5 PG-TO220 Q67040-S4198 SPI11N60S5 PG-TO262 Q67040-S4338 11N60S5 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current ID TC = 25 °C 11 TC = 100 °C 7 22 Pulsed drain current, tp limited by Tjmax ID puls 340 mJ Avalanche energy, single pulse EAS ID = 5.5 A, VDD = 50 V EAR 0.6 Avalanche energy, repetitive tAR limited by Tjmax1) ID = 11 A, VDD = 50 V 11 A Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS V ±20 VGS Gate source voltage AC (f >1Hz) ±30 Power dissipation, TC = 25°C Ptot 125 W °C Operating and storage temperature Tj , Tstg -55... +15

See also transistors datasheet: SPD50N03S2L-06G , SPD50P03LG , SPI80N06S-08 , SPI07N60C3 , SPI07N60S5 , SPI07N65C3 , SPI08N50C3 , SPI08N80C3 , IRF640 , SPI11N60CFD , SPI11N60S5 , SPI11N65C3 , SPI12N50C3 , SPI15N60C3 , SPI15N60CFD , SPI15N65C3 , SPI16N50C3 .

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