SPP15N60C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPP15N60C3

Type of SPP15N60C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 156

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 15

Maximum junction temperature (Tj), °C:

Rise Time of SPP15N60C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.00028

Package: TO220

Equivalent transistors for SPP15N60C3

SPP15N60C3 PDF documents for downloads:

1.1. spp15n60c3_spi15n60c3_spa15n60c3_rev[1].3.2new.pdf Size:684K _infineon

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 ? • New revolutionary high voltage technology ID 15 A • Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 3 • Ultra low effective capacitances 2 1 P-TO220-3-31 • Improved transconductance • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP15N60C3 PG-TO220 Q67040-S4600 15N60C3 SPI15N60C3 PG-TO262 Q67040-S4601 15N60C3 SPA15N60C3 PG-TO220FP SP000216325 15N60C3 Maximum Ratings Parameter Symbol Value Unit SPP_I SPA Continuous drain current ID A TC = 25 °C 15 151) TC = 100 °C 9.4 9.41) Pulsed drain current, tp limited by Tjmax ID puls 45 45 A Avalanche energy, single pulse EAS 460 460 mJ ID=7.5A, VDD=50V EAR Avalanche energy, repetitive tAR limited by Tjmax2) 0.8 0.8 ID=15A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax IAR 15 15 A Gate sou

1.2. spp15n60cfd_rev1.3.pdf Size:537K _infineon

SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS • Intrinsic fast-recovery body diode R 0.330 DS(on),max • Extremely low reverse recovery charge I 13.4 A D • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability • Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: • Softswitching PWM Stages • LCD & CRT TV Type Package Marking SPP15N60CFD PG-TO220 15N60CFD Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C Continuous drain current 13.4 A D C T =100 °C 8.4 C I T =25 °C 33 Pulsed drain current2) D,pulse C Avalanche energy, single pulse E I =6.7 A, V =50 V 460 mJ AS D DD 0.8 Avalanche energy, repetitive2),3) E I =13.4 A, V =50 V AR D DD 13.4 A Avalanche current, repetitive2),3) I AR I =13.4 A, D Drain source voltage slope dv /dt 80 V/ns V =480 V, T =125 °C DS j Reverse diode dv /dt dv

3.1. spp15n65c3_rev_2_0.pdf Size:253K _infineon

SPP15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS • Low gate charge R 0.28 ? DS(on),max • Extreme dv/dt rated Q 63 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO220-3-1 CoolMOS C3 designed for: • Notebook Adapter Type Package Marking SPP15N65C3 PG-TO220-3 15N65C3 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C Continuous drain current 15 A D C T =100 °C 9.4 C I T =25 °C 45 Pulsed drain current3) D,pulse C E I =3 A, V =50 V Avalanche energy, single pulse 460 mJ AS D DD 2),3) E I =5 A, V =50 V 0.8 Avalanche energy, repetitive t AR D DD AR 3),4) I 5.0 Avalanche current, repetitive t A AR AR V =0...480 V MOSFET dv /dt ruggedness dv /dt 50 V/ns DS V Gate source voltage static ±20 V GS AC (f>1 Hz) ±30 P T =25 °C Power dissipation 156 W tot C T , T Operating and

See also transistors datasheet: SPP08N80C3 , SPP08P06PH , SPP11N60C3 , SPP11N60CFD , SPP11N60S5 , SPP11N65C3 , SPP11N80C3 , SPP12N50C3 , IRFP4468 , SPP15N60CFD , SPP15N65C3 , SPP15P10PG , SPP15P10PLH , SPP16N50C3 , SPP17N80C3 , SPP18P06PH , SPP20N60C3 .

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