SPP17N80C3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SPP17N80C3

Type of SPP17N80C3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 208

Maximum drain-source voltage |Uds|, V: 800V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 17

Maximum junction temperature (Tj), °C:

Rise Time of SPP17N80C3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.29

Package: TO220

Equivalent transistors for SPP17N80C3

SPP17N80C3 PDF documents for downloads:

1.1. spp17n80c3_rev2.91.pdf Size:491K _infineon

SPP17N80C3 CoolMOS® Power Transistor Product Summary Features V 800 V DS • New revolutionary high voltage technology R @ Tj = 25°C 0.29 ? DS(on)max • Extreme dv/dt rated Q 88 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO220-3 • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Type Package Marking SPP17N80C3 PG-TO220-3 17N80C3 Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 °C Continuous drain current 17 A D C T =100 °C 11 C I T =25 °C 51 Pulsed drain current2) D,pulse C E I =3.4 A, V =50 V Avalanche energy, single pulse 670 mJ AS D DD 2),3) E I =17 A, V =50 V 0.5 Avalanche energy, repetitive t AR D DD AR 2),3) I 17 Avalanche current, repetitive t A A

1.2. spp17n80c3_spa17n80c3.rev.2.7.pdf Size:977K _infineon

SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor VDS 800 V Feature RDS(on) 0.29 ? • New revolutionary high voltage technology ID 17 A • Worldwide best RDS(on) in TO 220 PG-TO220-3-31 PG-TO220 • Ultra low gate charge • Periodic avalanche rated 3 • Extreme dv/dt rated 2 1 P-TO220-3-31 • Ultra low effective capacitances • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP17N80C3 PG-TO220 Q67040-S4353 17N80C3 SPA17N80C3 PG-TO220-3-31 SP000216353 17N80C3 Maximum Ratings Parameter Symbol Value Unit SPP SPA Continuous drain current ID A TC = 25 °C 17 171) TC = 100 °C 11 111) Pulsed drain current, tp limited by Tjmax ID puls 51 51 A Avalanche energy, single pulse EAS 670 670 mJ ID=3.4A, VDD=50V EAR Avalanche energy, repetitive tAR limited by Tjmax2) 0.5 0.5 ID=17A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax IAR 17 17 A Gate source voltage VGS ±20 ±20 V VGS Gate s

See also transistors datasheet: SPP11N80C3 , SPP12N50C3 , SPP15N60C3 , SPP15N60CFD , SPP15N65C3 , SPP15P10PG , SPP15P10PLH , SPP16N50C3 , BSS138 , SPP18P06PH , SPP20N60C3 , SPP20N60CFD , SPP20N60S5 , SPP20N65C3 , SPP21N50C3 , SPP24N60C3 , SPP24N60CFD .

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