MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF1407S
  IRF1407S
  IRF1407S
 
IRF1407S
  IRF1407S
  IRF1407S
 
IRF1407S
  IRF1407S
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF190N60E
FCPF20N60 ..FDD10N20LZ
FDD120AN15A0 ..FDMA520PZ
FDMA530PZ ..FDMS8025S
FDMS8026S ..FDPF12N50UT
FDPF12N60NZ ..FDS9936A
FDS9945 ..FQB7P20TM_F085
FQB8N60C ..FQPF9N25C
FQPF9N50C ..FRX130H1
FRX130H2 ..H5N3005LD
H5N3005LS ..HAT2140H
HAT2141H ..HUF75623P3
HUF75631P3 ..IPB052N04NG
IPB054N06N3G ..IPD30N08S2-22
IPD30N08S2L-21 ..IPL60R385CP
IPP015N04NG ..IPW50R140CP
IPW50R199CP ..IRF3315S
IRF340 ..IRF6626
IRF6628 ..IRF7504
IRF7506 ..IRF9642
IRF9643 ..IRFH5303
IRFH5304 ..IRFP240FI
IRFP241 ..IRFR5305
IRFR540Z ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHS2242
IRLHS6242 ..IRLWZ44A
IRLZ10 ..IXFH24N50Q
IXFH24N80P ..IXFL34N100
IXFL36N110P ..IXFR18N90P
IXFR200N10P ..IXFX20N120P
IXFX21N100F ..IXTA60N20T
IXTA62N15P ..IXTH60N25
IXTH67N08MA ..IXTP2N80
IXTP2N80P ..IXTT50P10
IXTT52N30P ..KF3N50DZ
KF3N50FS ..KP103L
KP103M ..MCH6336
MCH6337 ..MTBA5C10AQ8
MTBA5C10Q8 ..MTN3418S3
MTN3434G6 ..NDB5060L
NDB508A ..NTD4906N
NTD4909N ..NUS3116MT
NUS5530MN ..PMBF5484
PMBF5485 ..PSMN3R4-30PL
PSMN3R5-30LL ..RFD16N05LSM
RFD16N05SM ..RJK0853DPB
RJK0854DPB ..RRQ045P03
RRR015P03 ..SDF130JDA-D
SDF130JDA-S ..SFT1423
SFT1431 ..SMG2391P
SMG2398N ..SML50B26
SML50B30 ..SPB20N60C3
SPB20N60S5 ..SSG4224
SSG4228 ..SSM3K102TU
SSM3K104TU ..SSP4N80A
SSP4N80AS ..STB438A
STB438S ..STD5N20
STD5N20-1 ..STF8234
STF8236 ..STL80N75F6
STL85N6F3 ..STP200NF04L
STP20N06 ..STP652F
STP656F ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A60U
TK12A65D ..TPC6130
TPC6201 ..TPCA8A09-H
TPCA8A10-H ..UT3418
UT3419 ..ZVN2110A
ZVN2110G ..ZXMS6005SG
ZXMS6006DG ..ZXMS6006SG
 
IRF1407S All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF1407S MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF1407S

Type of IRF1407S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 75

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 100

Maximum junction temperature (Tj), °C:

Rise Time of IRF1407S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0078

Package: D2Pak

Equivalent transistors for IRF1407S

IRF1407S PDF doc:

1.1. irf1407s.pdf Size:159K _international_rectifier

IRF1407S
IRF1407S
PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078? Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ID = 100AV extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connec

3.1. irf1407.pdf Size:127K _international_rectifier

IRF1407S
IRF1407S
PD - 93907 AUTOMOTIVE MOSFET IRF1407 Typical Applications HEXFET® Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.0078? Ultra Low On-Resistance G Dynamic dv/dt Rating 175°C Operating Temperature ID = 130AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide TO-220AB variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

4.1. irf140-1-2-3.pdf Size:364K _st2

IRF1407S
IRF1407S
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4.2. irf1404l.pdf Size:306K _international_rectifier

IRF1407S
IRF1407S
PD -93853C IRF1404S IRF1404L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

4.3. irf1405s.pdf Size:154K _international_rectifier

IRF1407S
IRF1407S
PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET® Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m? Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C D2Pak TO-262 junction operating temperature, fast switching speed IRF1405S IRF1405L and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units

4.4. irf140.pdf Size:144K _international_rectifier

IRF1407S
IRF1407S
PD - 90369 REPETITIVE AVALANCHE AND dv/dt RATED IRF140 100V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077? 28A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-3 tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor controls, inverters, choppers, audio Ease of Paralleling

4.5. irf1405.pdf Size:116K _international_rectifier

IRF1407S
IRF1407S
PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET® Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m? Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed TO-220AB and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings

4.6. irf1404.pdf Size:107K _international_rectifier

IRF1407S
IRF1407S
PD -91896E IRF1404 HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID

4.7. irf1405z.pdf Size:179K _international_rectifier

IRF1407S
IRF1407S
PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) = 4.9m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C 150 Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 110 A Continuous Drain Current, VGS @ 10V ID @ TC = 25°C 75 Continuous

4.8. irf1404s.pdf Size:139K _international_rectifier

IRF1407S
IRF1407S
PD -93853B IRF1404S IRF1404L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

4.9. irf1404z.pdf Size:181K _international_rectifier

IRF1407S
IRF1407S
PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C 190 Continuous Drain Current, VGS @ 10V ID @ TC = 100°C 130 A Continuous Drain Current, VGS

See also transistors datasheet: IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , 2SK3569 , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 .

Keywords

 IRF1407S Datasheet  IRF1407S Datenblatt  IRF1407S RoHS  IRF1407S Distributor
 IRF1407S Application Notes  IRF1407S Component  IRF1407S Circuit  IRF1407S Schematic
 IRF1407S Equivalent  IRF1407S Cross Reference  IRF1407S Data Sheet  IRF1407S Fiche Technique

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