MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF1407S
  IRF1407S
  IRF1407S
 
IRF1407S
  IRF1407S
  IRF1407S
 
IRF1407S
  IRF1407S
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK652R6-40C
BUK653R2-55C ..BUK9212-55B
BUK9213-30A ..BUZ46
BUZ50A ..CED16N10L
CED20P06 ..CEP02N6A
CEP02N6G ..CPH3350
CPH3351 ..DMP2104LP
DMP2104V ..FCPF7N60NT
FCPF7N60NT ..FDD18N20LZ
FDD18N20LZ ..FDMA291P
FDMA3023PZ ..FDMS86105
FDMS86105 ..FDPF5N60NZ
FDPF5N60NZ ..FDS8958B
FDS8978 ..FQB22P10TM_F085
FQB25N33TM_F085 ..FQP9N30
FQP9N90C ..FRL9230R
FRM130D ..GWM160-0055X1-SL
GWM160-0055X1-SL ..HAT1046R
HAT1047R ..HEPF2004
HEPF2007A ..IPA057N06N3G
IPA057N08N3G ..IPB80N04S2L-03
IPB80N04S3-03 ..IPI100N10S3-05
IPI100P03P3L-04 ..IPP60R199CP
IPP60R250CP ..IRF1010NS
IRF1010Z ..IRF610A
IRF610S ..IRF7326D2
IRF7328 ..IRF840I
IRF840S ..IRFBL10N60A
IRFBL12N50A ..IRFL1006
IRFL110 ..IRFPF50
IRFPG30 ..IRFS510A
IRFS520 ..IRFU2905Z
IRFU310 ..IRL3705Z
IRL3705ZL ..IRLR8726
IRLR8729 ..IXFE44N60
IXFE48N50Q ..IXFK230N20T
IXFK240N15T2 ..IXFN48N55
IXFN48N60P ..IXFT70N15
IXFT70N20Q3 ..IXTA152N085T7
IXTA15P15T ..IXTH220N055T
IXTH220N075T ..IXTN90N25L2
IXTN90P20P ..IXTQ40N50L2
IXTQ40N50Q ..IXTZ35N25MA
IXTZ35N25MB ..KMA2D4P20SA
KMA2D7DP20X ..KTK5132E
KTK5132S ..NDB4050L
NDB4060 ..NTD4815N
NTD4855N ..NTTFS5826NL
NTUD3127C ..PHX6ND50E
PHX7N60E ..PSMN2R6-40YS
PSMN2R7-30PL ..RFD7N10LE
RFD7N10LESM ..RJK1051DPB
RJK1052DPB ..RSD160P05
RSD175N10 ..SDF360JED
SDF3N90 ..SGSP319
SGSP321 ..SML1004RCN
SML1004RGN ..SMN03T80F
SMN03T80IS ..SSD12P10
SSD15N10 ..SSM3J05FU
SSM3J09FU ..SSM6L40TU
SSM6N04FU ..STB14NK60Z
STB14NM50N ..STD35NF3LL
STD38NH02L ..STF34NM60ND
STF35N65M5 ..STL60N32N3LL
STL60N3LLH5 ..STP36NF06L
STP38N06 ..STP9NK65ZFP
STP9NK70Z ..STW45NM60
STW45NM60D ..TK35S04K3L
TK3A60DA ..TPC8108
TPC8109 ..TPCP8206
TPCP8301 ..VMK90-02T2
VMM1500-0075X2 ..ZXMN3AMC
ZXMN3B01F ..ZXMS6006SG
 
IRF1407S All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF1407S MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF1407S

Type of IRF1407S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 75

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 100

Maximum junction temperature (Tj), °C:

Rise Time of IRF1407S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0078

Package: D2Pak

Equivalent transistors for IRF1407S

IRF1407S PDF doc:

1.1. irf1407s.pdf Size:159K _international_rectifier

IRF1407S
IRF1407S
PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078? Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ID = 100AV extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connec

3.1. irf1407.pdf Size:127K _international_rectifier

IRF1407S
IRF1407S
PD - 93907 AUTOMOTIVE MOSFET IRF1407 Typical Applications HEXFET® Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.0078? Ultra Low On-Resistance G Dynamic dv/dt Rating 175°C Operating Temperature ID = 130AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide TO-220AB variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

4.1. irf140-1-2-3.pdf Size:364K _st2

IRF1407S
IRF1407S
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4.2. irf1404s.pdf Size:139K _international_rectifier

IRF1407S
IRF1407S
PD -93853B IRF1404S IRF1404L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

4.3. irf1404z.pdf Size:181K _international_rectifier

IRF1407S
IRF1407S
PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C 190 Continuous Drain Current, VGS @ 10V ID @ TC = 100°C 130 A Continuous Drain Current, VGS

4.4. irf1404.pdf Size:107K _international_rectifier

IRF1407S
IRF1407S
PD -91896E IRF1404 HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID

4.5. irf1405.pdf Size:116K _international_rectifier

IRF1407S
IRF1407S
PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET® Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m? Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed TO-220AB and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings

4.6. irf1405s.pdf Size:154K _international_rectifier

IRF1407S
IRF1407S
PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET® Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m? Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C D2Pak TO-262 junction operating temperature, fast switching speed IRF1405S IRF1405L and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units

4.7. irf140.pdf Size:144K _international_rectifier

IRF1407S
IRF1407S
PD - 90369 REPETITIVE AVALANCHE AND dv/dt RATED IRF140 100V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077? 28A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-3 tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor controls, inverters, choppers, audio Ease of Paralleling

4.8. irf1405z.pdf Size:179K _international_rectifier

IRF1407S
IRF1407S
PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) = 4.9m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C 150 Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 110 A Continuous Drain Current, VGS @ 10V ID @ TC = 25°C 75 Continuous

4.9. irf1404l.pdf Size:306K _international_rectifier

IRF1407S
IRF1407S
PD -93853C IRF1404S IRF1404L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

See also transistors datasheet: IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , 2SK3569 , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 .

Keywords

 IRF1407S Datasheet  IRF1407S Datenblatt  IRF1407S RoHS  IRF1407S Distributor
 IRF1407S Application Notes  IRF1407S Component  IRF1407S Circuit  IRF1407S Schematic
 IRF1407S Equivalent  IRF1407S Cross Reference  IRF1407S Data Sheet  IRF1407S Fiche Technique

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