MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF1407S
  IRF1407S
  IRF1407S
 
IRF1407S
  IRF1407S
  IRF1407S
 
IRF1407S
  IRF1407S
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP09N20H-HF
AP09N20J-HF ..AP2732GK
AP2761I-A ..AP4513GH-A
AP4513GM-HF ..AP85U03GH-HF
AP85U03GM-HF ..AP95T08GP
AP95T10AGI-HF ..APT1003R5BN
APT1003R5CN ..AUIRF1324S
AUIRF1324S-7P ..AUIRL1404Z
AUIRL1404ZL ..BFL4001
BFL4004 ..BLS6G2731S-120
BLS6G2731S-130 ..BSO303PH
BSO303SPH ..BUK545-100A
BUK545-100B ..BUK7908-40AIE
BUK7909-75AIE ..BUP67
BUP68 ..CEB84A4
CEB85A3 ..CEM6188
CEM6426 ..CEU4204
CEU4269 ..DMN5L06DWK
DMN5L06K ..FCH76N60NF
FCI25N60N_F102 ..FDC638APZ
FDC638P ..FDH3632
FDH3632 ..FDMS7672
FDMS7672 ..FDPF12N60NZ
FDPF13N50FT ..FDS8870
FDS8870 ..FQA40N25
FQA44N30 ..FQP3N80C
FQP3P20 ..FRK260H
FRK260R ..FW274
FW282 ..H7P1002DS
H7P1006MD90TZ ..HAT2266H
HAT2267H ..HUF76443P3
HUF76443S3S ..IPB60R099CP
IPB60R099CPA ..IPG20N04S4-09
IPG20N04S4-12 ..IPP180N10N3G
IPP200N15N3G ..IRC830-008
IRC8305 ..IRF530FI
IRF530N ..IRF7241
IRF730 ..IRF820AL
IRF820AS ..IRFB59N10D
IRFB61N15D ..IRFI9540N
IRFI9620G ..IRFP470
IRFP4710 ..IRFS352
IRFS353 ..IRFU024N
IRFU025 ..IRL2203N
IRL2203NL ..IRLR120N
IRLR130A ..IXFB62N80Q3
IXFB70N60Q2 ..IXFK100N25
IXFK102N30P ..IXFN32N100Q3
IXFN32N120 ..IXFT26N50Q
IXFT26N60P ..IXKP13N60C5M
IXKP20N60C5 ..IXTH140P05T
IXTH14N100 ..IXTM15N60
IXTM20N60 ..IXTQ160N075T
IXTQ160N085T ..IXTY08N100P
IXTY08N50D2 ..KHB4D0N65F2
KHB4D0N65P ..KP750B
KP750B1 ..MPF102
MPF4393 ..MTE20N10FP
MTE50N10FP ..MTNK5C3
MTNK5N3 ..NDP6051L
NDP6060 ..NTLJS3113P
NTLJS4114N ..PHB8N50E
PHB8ND50E ..PMZ760SN
PN4091 ..R6006ANX
R6008ANX ..RFT2P03L
RFT3055LE ..RJK6012DPE
RJK6013DPE ..RW1A030AP
RW1C015UN ..SE3406
SE3407 ..SIF2N65C
SIF2N65D ..SML20L100
SML20S56 ..SPA08N80C3
SPA11N60C3 ..SSE90N08-08
SSE90N10-14 ..SSM3J313T
SSM3J314T ..SSM6P25TU
SSM6P26TU ..STB25NM60ND
STB26NM60N ..STD4NK50Z-1
STD4NK50ZD ..STFI20NK50Z
STFW12N120K5 ..STP10N62K3
STP10NA40 ..STP4N150
STP4N20 ..STS5PF30L
STS6NF20V ..STY60NM50
STY60NM60 ..TK4P60DB
TK50F15J1 ..TPC8213-H
TPC8214-H ..TPCS8303
TPCT4201 ..UTT4425
UTT4815 ..ZXMN2088DE6
ZXMN20B28K ..ZXMS6006SG
 
IRF1407S All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF1407S MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF1407S

Type of IRF1407S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 75

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 100

Maximum junction temperature (Tj), °C:

Rise Time of IRF1407S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0078

Package: D2Pak

Equivalent transistors for IRF1407S

IRF1407S PDF doc:

1.1. irf1407s.pdf Size:159K _international_rectifier

IRF1407S
IRF1407S
PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078? Description G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ID = 100AV extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connec

3.1. irf1407.pdf Size:127K _international_rectifier

IRF1407S
IRF1407S
PD - 93907 AUTOMOTIVE MOSFET IRF1407 Typical Applications HEXFET® Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.0078? Ultra Low On-Resistance G Dynamic dv/dt Rating 175°C Operating Temperature ID = 130AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide TO-220AB variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

4.1. irf140-1-2-3.pdf Size:364K _st2

IRF1407S
IRF1407S
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4.2. irf1404l.pdf Size:306K _international_rectifier

IRF1407S
IRF1407S
PD -93853C IRF1404S IRF1404L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

4.3. irf1405s.pdf Size:154K _international_rectifier

IRF1407S
IRF1407S
PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET® Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m? Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C D2Pak TO-262 junction operating temperature, fast switching speed IRF1405S IRF1405L and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units

4.4. irf140.pdf Size:144K _international_rectifier

IRF1407S
IRF1407S
PD - 90369 REPETITIVE AVALANCHE AND dv/dt RATED IRF140 100V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077? 28A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-3 tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor controls, inverters, choppers, audio Ease of Paralleling

4.5. irf1405.pdf Size:116K _international_rectifier

IRF1407S
IRF1407S
PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET® Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m? Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed TO-220AB and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings

4.6. irf1404.pdf Size:107K _international_rectifier

IRF1407S
IRF1407S
PD -91896E IRF1404 HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID

4.7. irf1405z.pdf Size:179K _international_rectifier

IRF1407S
IRF1407S
PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET® Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature RDS(on) = 4.9m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C 150 Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 110 A Continuous Drain Current, VGS @ 10V ID @ TC = 25°C 75 Continuous

4.8. irf1404s.pdf Size:139K _international_rectifier

IRF1407S
IRF1407S
PD -93853B IRF1404S IRF1404L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

4.9. irf1404z.pdf Size:181K _international_rectifier

IRF1407S
IRF1407S
PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C 190 Continuous Drain Current, VGS @ 10V ID @ TC = 100°C 130 A Continuous Drain Current, VGS

See also transistors datasheet: IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , IRF1407 , IRF1407L , 2SK3569 , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 .

Keywords

 IRF1407S Datasheet  IRF1407S Datenblatt  IRF1407S RoHS  IRF1407S Distributor
 IRF1407S Application Notes  IRF1407S Component  IRF1407S Circuit  IRF1407S Schematic
 IRF1407S Equivalent  IRF1407S Cross Reference  IRF1407S Data Sheet  IRF1407S Fiche Technique

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