IRF2804S-7P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF2804S-7P

Type of IRF2804S-7P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 330

Maximum drain-source voltage |Uds|, V: 40V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 320

Maximum junction temperature (Tj), °C:

Rise Time of IRF2804S-7P transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0016

Package: D2Pak_7Lead

Equivalent transistors for IRF2804S-7P

IRF2804S-7P PDF documents for downloads:

3.1. irf2804.pdf Size:569K _international_rectifier

PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET® Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175°C Operating Temperature RDS(on) = 2.3m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 280 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 200 A ID @ TC = 25°C Contin

4.1. irf2807z.pdf Size:173K _international_rectifier

PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C 89 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C 63 Continuous Drain Current, VGS @ 10V (See Fig. 9) ID

4.2. irf2807.pdf Size:207K _international_rectifier

PD - 91517 IRF2807 HEXFET® Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C C

4.3. irf2807s.pdf Size:124K _international_rectifier

PD - 94170 IRF2807S IRF2807L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection D2Pak TO-262 resistance a

4.4. irf2805.pdf Size:151K _international_rectifier

PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET® Power MOSFET Typical Applications D l Climate Control, ABS, Electronic Braking, VDSS = 55V Windshield Wipers Features RDS(on) = 4.7m? G l Advanced Process Technology l Ultra Low On-Resistance ID = 75A l 175°C Operating Temperature S l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive TO-220AB applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 175 ID @ T

See also transistors datasheet: IRF1607 , IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRFP260 , IRF2805 , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRF2903ZL .

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