MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF2805
  IRF2805
  IRF2805
 
IRF2805
  IRF2805
  IRF2805
 
IRF2805
  IRF2805
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7805Q
AUIRF9540N ..BF1203
BF1204 ..BLF6G10LS-200RN
BLF6G10LS-260PRN ..BSC042NE7NS3G
BSC046N02KSG ..BSS84AKM
BSS84AKS ..BUK7109-75ATE
BUK714R1-40BT ..BUK9516-75B
BUK9518-30 ..BUZ900X4S
BUZ901 ..CED830G
CED83A3 ..CEP16N10L
CEP20A03 ..DMC2004VK
DMC2020USD ..DMP57D5UV
DMP58D0SV ..FDB050AN06A0
FDB060AN08A0 ..FDD5202P
FDD5353 ..FDMC5614P
FDMC6296 ..FDN361BN
FDN372S ..FDS3572
FDS3580 ..FDT86244
FDT86246 ..FQD10N20L
FQD11P06 ..FQPF33N10
FQPF33N10L ..FRM9240H
FRM9240R ..H07N65F
H10N60E ..HAT2020R
HAT2022R ..HR3N200
HRF3205 ..IPA60R600E6
IPA60R750E6 ..IPD040N03LG
IPD042P03L3G ..IPI60R125CP
IPI60R165CP ..IPP80N04S3-06
IPP80N04S3-H4 ..IRF142
IRF143 ..IRF630NS
IRF630S ..IRF740S
IRF741 ..IRF9395M
IRF9410 ..IRFF024
IRFF110 ..IRFN440
IRFN450 ..IRFR220
IRFR220A ..IRFS650A
IRFS654A ..IRFU9024
IRFU9024N ..IRL620A
IRL620S ..IRLU230A
IRLU2703 ..IXFH14N100Q2
IXFH14N60P ..IXFK44N80Q3
IXFK48N50 ..IXFP22N60P3
IXFP230N075T2 ..IXFV22N50PS
IXFV22N60P ..IXTA240N055T7
IXTA24P085T ..IXTH35N25MA
IXTH35N25MB ..IXTP160N075T
IXTP160N10T ..IXTR40P50P
IXTR48P20P ..JANSR2N7396
JANSR2N7398 ..KMB4D5DN60QA
KMB4D5NP55Q ..KU086N10P
KU2303D ..MTB25A04Q8
MTB25N04J3 ..MTN2306ZN3
MTN2310M3 ..MTP452L3
MTP452M3 ..NTB45N06
NTB45N06L ..NTP5863N
NTP5864N ..PHP6N10E
PHP6N50E ..PSMN069-100YS
PSMN070-200B ..RF1K49223
RF1K49224 ..RJK0397DPA
RJK03A4DPA ..RQJ0202VGDQA
RQJ0203WGDQA ..SDF120JAA-D
SDF120JAA-S ..SFS9Z34
SFT1341 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPI11N60C3
SPI11N60CFD ..SSG4920N
SSG4930N ..SSM3K329R
SSM3K333R ..SSQ6N60
SSR1N50 ..STD10N10LT4
STD10N10T4 ..STD95N4LF3
STD9NM50N ..STI200N6F3
STI21N65M5 ..STP18N10FI
STP18N55M5 ..STP60NF03L
STP60NF06 ..STV36N06
STV3NA80 ..TJ8S06M3L
TK07H90A ..TPC6003
TPC6004 ..TPCA8081
TPCA8082 ..UT2312
UT2316 ..WTL2622
WTM2310A ..ZXMP6A13F
ZXMP6A13G ..ZXMS6006SG
 
IRF2805 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF2805 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF2805

Type of IRF2805 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 330

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 175

Maximum junction temperature (Tj), ┬░C:

Rise Time of IRF2805 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0047

Package: TO220AB

Equivalent transistors for IRF2805

IRF2805 PDF doc:

1.1. irf2805.pdf Size:151K _international_rectifier

IRF2805
IRF2805
PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET« Power MOSFET Typical Applications D l Climate Control, ABS, Electronic Braking, VDSS = 55V Windshield Wipers Features RDS(on) = 4.7m? G l Advanced Process Technology l Ultra Low On-Resistance ID = 75A l 175░C Operating Temperature S l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive TO-220AB applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C Continuous Drain Current, VGS @ 10V (Silicon limited) 175 ID @ T

4.1. irf2807z.pdf Size:173K _international_rectifier

IRF2805
IRF2805
PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET« Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175░C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C 89 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100░C 63 Continuous Drain Current, VGS @ 10V (See Fig. 9) ID

4.2. irf2804.pdf Size:569K _international_rectifier

IRF2805
IRF2805
PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 2.3m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C Continuous Drain Current, VGS @ 10V (Silicon limited) 280 ID @ TC = 100░C Continuous Drain Current, VGS @ 10V (See Fig.9) 200 A ID @ TC = 25░C Contin

4.3. irf2807.pdf Size:207K _international_rectifier

IRF2805
IRF2805
PD - 91517 IRF2807 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C C

4.4. irf2807s.pdf Size:124K _international_rectifier

IRF2805
IRF2805
PD - 94170 IRF2807S IRF2807L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection D2Pak TO-262 resistance a

See also transistors datasheet: IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , BF245A , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRF2903ZL , IRF2903ZS .

Keywords

 IRF2805 Datasheet  IRF2805 Datenblatt  IRF2805 RoHS  IRF2805 Distributor
 IRF2805 Application Notes  IRF2805 Component  IRF2805 Circuit  IRF2805 Schematic
 IRF2805 Equivalent  IRF2805 Cross Reference  IRF2805 Data Sheet  IRF2805 Fiche Technique

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