MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF2805
  IRF2805
  IRF2805
 
IRF2805
  IRF2805
  IRF2805
 
IRF2805
  IRF2805
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP22N13GH-HF
AP22T03GH-HF ..AP4224LGM-HF
AP4226AGM ..AP62T03GJ
AP6618GM-HF ..AP9468GJ
AP9468GJ-HF ..AP9972GI-HF
AP9972GP-HF ..APT5019HVR
APT5020BN ..AUIRFI3205
AUIRFIZ34N ..BF256B
BF256C ..BLF6G22L-40P
BLF6G22LS-100 ..BSC084P03NS3EG
BSC084P03NS3G ..BSZ050N03LSG
BSZ050N03MSG ..BUK7507-55B
BUK7508-40B ..BUK9606-55A
BUK9606-55B ..BUZ908
BUZ908D ..CEF08N6A
CEF08N8 ..CEP6186
CEP630N ..DMG4466SSS
DMG4466SSSL ..ECH8655R
ECH8656 ..FDB3632
FDB3632 ..FDD6690A
FDD6760A ..FDMC7696
FDMC7696 ..FDP090N10
FDP090N10 ..FDS4559_F085
FDS4672A ..FDZ391P
FJN598J ..FQD20N06
FQD2N100 ..FQPF85N06
FQPF8N60C ..FRS440R
FRS9130D ..H5N2001LS
H5N2003P ..HAT2064R
HAT2065R ..HUF75329P3
HUF75329S3 ..IPB023N04NG
IPB023N06N3G ..IPD15N06S2L-64
IPD160N04LG ..IPI80N04S3-H4
IPI80N04S4-03 ..IPP90R1K2C3
IPP90R340C3 ..IRF2807ZS
IRF2903Z ..IRF6603
IRF6604 ..IRF7463
IRF7465 ..IRF9543
IRF9610 ..IRFH5025
IRFH5053 ..IRFP150
IRFP150A ..IRFR3707Z
IRFR3707ZC ..IRFS830A
IRFS831 ..IRFW630A
IRFW634A ..IRLB8743
IRLB8748 ..IRLU8259
IRLU8721 ..IXFH20N100P
IXFH20N60 ..IXFK78N50P3
IXFK80N15Q ..IXFR100N25
IXFR102N30P ..IXFX13N100
IXFX140N25T ..IXTA3N60P
IXTA42N15T ..IXTH450P2
IXTH460P2 ..IXTP220N055T
IXTP220N075T ..IXTT24P20
IXTT26N50P ..KF13N50P
KF13N60N ..KMC7D0CN20CA
KMD4D5P30XA ..MCH3374
MCH3375 ..MTB55N03J3
MTB55N03N3 ..MTN2N70FP
MTN2N70I3 ..MTS3572G6
MTW32N20E ..NTD3055L170
NTD40N03R ..NTTFS4824N
NTTFS4928N ..PHW8ND50E
PHW9N60E ..PSMN1R8-30PL
PSMN1R9-25YLC ..RFB18N10CS
RFD10P03L ..RJK0451DPB
RJK0452DPB ..RQK0603CGDQA
RQK0603CGDQS ..SDF150JAB
SDF150NA40HE ..SFW9510
SFW9520 ..SMK0825D
SMK0825D2 ..SML6040AN
SML6040BN ..SPP07N60C3
SPP07N60CFD ..SSH15N55A
SSH15N60 ..SSM5N15FE
SSM5N15FU ..SSS4N80AS
SSS4N90A ..STD12NF06
STD12NF06L ..STE40NK90ZD
STE45N50 ..STK0380D
STK0380F ..STP20NF20
STP20NK50Z ..STP6NK90Z
STP70N10F4 ..STW11NK90Z
STW11NM80 ..TK12E60U
TK12J55D ..TPC8003
TPC8004 ..TPCC8001-H
TPCC8002-H ..UT3458
UT3N01Z ..ZVN2120G
ZVN2535A ..ZXMS6006SG
00000000..ZXMS6006SG
 
IRF2805 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF2805 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF2805

Type of IRF2805 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 330

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 175

Maximum junction temperature (Tj), ┬░C:

Rise Time of IRF2805 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0047

Package: TO220AB

Equivalent transistors for IRF2805

IRF2805 PDF doc:

1.1. irf2805.pdf Size:151K _international_rectifier

IRF2805
IRF2805
PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET« Power MOSFET Typical Applications D l Climate Control, ABS, Electronic Braking, VDSS = 55V Windshield Wipers Features RDS(on) = 4.7m? G l Advanced Process Technology l Ultra Low On-Resistance ID = 75A l 175░C Operating Temperature S l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive TO-220AB applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C Continuous Drain Current, VGS @ 10V (Silicon limited) 175 ID @ T

4.1. irf2807z.pdf Size:173K _international_rectifier

IRF2805
IRF2805
PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET« Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175░C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C 89 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100░C 63 Continuous Drain Current, VGS @ 10V (See Fig. 9) ID

4.2. irf2804.pdf Size:569K _international_rectifier

IRF2805
IRF2805
PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 2.3m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C Continuous Drain Current, VGS @ 10V (Silicon limited) 280 ID @ TC = 100░C Continuous Drain Current, VGS @ 10V (See Fig.9) 200 A ID @ TC = 25░C Contin

4.3. irf2807.pdf Size:207K _international_rectifier

IRF2805
IRF2805
PD - 91517 IRF2807 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C C

4.4. irf2807s.pdf Size:124K _international_rectifier

IRF2805
IRF2805
PD - 94170 IRF2807S IRF2807L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection D2Pak TO-262 resistance a

See also transistors datasheet: IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , BF245A , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRF2903ZL , IRF2903ZS .

Keywords

 IRF2805 Datasheet  IRF2805 Datenblatt  IRF2805 RoHS  IRF2805 Distributor
 IRF2805 Application Notes  IRF2805 Component  IRF2805 Circuit  IRF2805 Schematic
 IRF2805 Equivalent  IRF2805 Cross Reference  IRF2805 Data Sheet  IRF2805 Fiche Technique

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