MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF2805
  IRF2805
  IRF2805
 
IRF2805
  IRF2805
  IRF2805
 
IRF2805
  IRF2805
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP0503GMT-HF
AP0504GH-HF ..AP2533GY-HF
AP2535GEY-HF ..AP4453GYT-HF
AP4455GEH-HF ..AP73T03GJ-HF
AP73T03GMT-HF ..AP9575GS-HF
AP9576GH ..AP9T18GEH
AP9T18GEJ ..ATP103
ATP104 ..AUIRFSL3004
AUIRFSL3107 ..BF996S
BF996SR ..BLF871
BLF871S ..BSN20
BSN254 ..BUK426-1000B
BUK436W-1000B ..BUK7624-55
BUK7624-55A ..BUK9MHH-65PNN
BUK9MJJ-55PSS ..CEB3205
CEB35P10 ..CEM3138
CEM3172 ..CEU02N7G-1
CEU02N9 ..DMN3033LSN
DMN3051L ..FCA76N60N
FCA76N60N ..FDC3612
FDC3612 ..FDG327NZ
FDG328P ..FDMS6673BZ
FDMS6681Z ..FDP7N50
FDP7N60NZ ..FDS6982
FDS6982AS ..FMD47-06KC5
FMD47-06KC5 ..FQP13N10L
FQP13N50 ..FRE9160R
FRE9260D ..FSL9130D
FSL9130R ..H7N0401LM
H7N0401LS ..HAT2192WP
HAT2193WP ..HUF76137S3S
HUF76139P3 ..IPB160N04S2-03
IPB160N04S2L-03 ..IPD65R380C6
IPD65R380E6 ..IPP08CN10LG
IPP08CN10NG ..IRC244
IRC250 ..IRF430
IRF440 ..IRF6810S
IRF6811S ..IRF7807
IRF7807A ..IRFB3607
IRFB3607G ..IRFI550A
IRFI610A ..IRFP4227
IRFP4229 ..IRFS243
IRFS244A ..IRFSL4410
IRFSL4410Z ..IRFZ44N
IRFZ44NL ..IRLML2060
IRLML2244 ..IXFA10N80P
IXFA110N15T2 ..IXFH6N100
IXFH6N100F ..IXFN150N15
IXFN160N30T ..IXFR90N30
IXFT10N100 ..IXFX66N50Q2
IXFX73N30Q ..IXTF230N085T
IXTF250N075T ..IXTK21N100
IXTK22N100L ..IXTP76N25T
IXTP76P10T ..IXTV270N055T2S
IXTV280N055T ..KF7N80F
KF80N08F ..KP740V
KP741A ..MMBF5458
MMBF5459 ..MTDN3018S6R
MTDN3154C6 ..MTN7000ZA3
MTN7000ZHA3 ..NDF08N60Z
NDF10N60Z ..NTHD3100C
NTHD3101F ..PHB191NQ06LT
PHB20N06T ..PMN40LN
PMN45EN ..PSMN9R0-25YLC
PSMN9R0-30LL ..RFP15P05SM
RFP15P06 ..RJK4006DPD
RJK4006DPP-M0 ..RT1E060XN
RTF015N03 ..SDF9240
SDF9N100GAF-D ..SI2305
SI2312 ..SML1004RKN
SML100A9 ..SMN0470F
SMN04L20D ..SSD20N06-90D
SSD20N10-130D ..SSM3J108TU
SSM3J109TU ..SSM6N05FU
SSM6N09FU ..STB150NF04
STB150NF55 ..STD3LN62K3
STD3N25-1 ..STF3LN62K3
STF3N62K3 ..STL65DN3LLH5
STL65N3LLH5 ..STP3LN62K3
STP3N100 ..STP9NK70ZFP
STP9NK90Z ..STW47NM60ND
STW48NM60N ..TK30J25D
TK30S06K3L ..TPC8105-H
TPC8107 ..TPCP8204
TPCP8205-H ..UTT100N08
UTT100P03 ..ZXMC10A816N8
ZXMC3A16DN8 ..ZXMS6006SG
 
IRF2805 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF2805 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF2805

Type of IRF2805 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 330

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 175

Maximum junction temperature (Tj), ┬░C:

Rise Time of IRF2805 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0047

Package: TO220AB

Equivalent transistors for IRF2805

IRF2805 PDF doc:

1.1. irf2805.pdf Size:151K _international_rectifier

IRF2805
IRF2805
PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET« Power MOSFET Typical Applications D l Climate Control, ABS, Electronic Braking, VDSS = 55V Windshield Wipers Features RDS(on) = 4.7m? G l Advanced Process Technology l Ultra Low On-Resistance ID = 75A l 175░C Operating Temperature S l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive TO-220AB applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C Continuous Drain Current, VGS @ 10V (Silicon limited) 175 ID @ T

4.1. irf2807z.pdf Size:173K _international_rectifier

IRF2805
IRF2805
PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET« Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175░C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C 89 A Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100░C 63 Continuous Drain Current, VGS @ 10V (See Fig. 9) ID

4.2. irf2804.pdf Size:569K _international_rectifier

IRF2805
IRF2805
PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 2.3m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C Continuous Drain Current, VGS @ 10V (Silicon limited) 280 ID @ TC = 100░C Continuous Drain Current, VGS @ 10V (See Fig.9) 200 A ID @ TC = 25░C Contin

4.3. irf2807.pdf Size:207K _international_rectifier

IRF2805
IRF2805
PD - 91517 IRF2807 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C C

4.4. irf2807s.pdf Size:124K _international_rectifier

IRF2805
IRF2805
PD - 94170 IRF2807S IRF2807L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection D2Pak TO-262 resistance a

See also transistors datasheet: IRF1902 , IRF2204 , IRF2204L , IRF2204S , IRF2804 , IRF2804L , IRF2804S , IRF2804S-7P , BF245A , IRF2805L , IRF2805S , IRF2807Z , IRF2807ZL , IRF2807ZS , IRF2903Z , IRF2903ZL , IRF2903ZS .

Keywords

 IRF2805 Datasheet  IRF2805 Datenblatt  IRF2805 RoHS  IRF2805 Distributor
 IRF2805 Application Notes  IRF2805 Component  IRF2805 Circuit  IRF2805 Schematic
 IRF2805 Equivalent  IRF2805 Cross Reference  IRF2805 Data Sheet  IRF2805 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages