IRF3704ZCS MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF3704ZCS

Type of IRF3704ZCS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 57

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 67

Maximum junction temperature (Tj), °C:

Rise Time of IRF3704ZCS transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0079

Package: D2Pak

Equivalent transistors for IRF3704ZCS

IRF3704ZCS PDF documents for downloads:

3.1. irf3704.pdf Size:125K _international_rectifier

PD - 93888B IRF3704 SMPS MOSFET IRF3704S IRF3704L Applications HEXFET® Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial use 20V 9.0m? 77A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3704 IRF3704S IRF3704L Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 77 ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 64 A IDM Pulsed Drain Current 308 PD @TC = 25°C Maximum Power Dissipation 87 W PD @TC = 70°C Maximum Power Dissipation 61 W Linear Derating Factor 0.59 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 1.73 R?

4.1. irf3703.pdf Size:95K _international_rectifier

PD - 93918 IRF3703 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Synchronous Rectification 30V 2.8m? 210A Active ORing Benefits Ultra Low On-Resistance Low Gate Impedance to Reduce Switching Losses Fully Avalanche Rated TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 100 A IDM Pulsed Drain Current 1000 PD @TC = 25°C Power Dissipation 230 W PD @TA = 25°C Power Dissipation 3.8 Linear Derating Factor 1.5 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 0.65 R?CS Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W R?JA Junction-to-Ambient ––– 62 Notes through are on page 8 www.irf.com 1 02/27/01 IRF3703 Static @ TJ = 25°C (unless otherwise specifi

4.2. irf3708.pdf Size:138K _international_rectifier

PD - 93938B IRF3708 SMPS MOSFET IRF3708S IRF3708L Applications HEXFET® Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom VDSS RDS(on) max ID and Industrial Use 30V 12m? 62A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3708 IRF3708S IRF3708L Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ±12 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 62 ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 52 A IDM Pulsed Drain Current 248 PD @TC = 25°C Maximum Power Dissipation 87 W PD @TC = 70°C Maximum Power Dissipation 61 W Linear Derating Factor 0.58 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 1.

4.3. irf3707.pdf Size:143K _international_rectifier

PD - 93937B IRF3707 IRF3707S SMPS MOSFET IRF3707L Applications HEXFET® Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial use 30V 12.5m? 62A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3707 IRF3707S IRF3707L Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 62 ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 52 A IDM Pulsed Drain Current 248 PD @TC = 25°C Maximum Power Dissipation 87 W PD @TC = 70°C Maximum Power Dissipation 61 W Linear Derating Factor 0.59 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case ––– 1.73 R?C

4.4. irf3705ns.pdf Size:161K _international_rectifier

PD - 9.1502B IRL3705NS/L HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175°C Operating Temperature RDS(on) = 0.01? Fast Switching G Fully Avalanche Rated ID = 89A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The 2 D Pa k TO-262 D2Pak is suitable for high current applications because of

4.5. irf3706.pdf Size:145K _international_rectifier

PD - 93936A IRF3706 SMPS MOSFET IRF3706S IRF3706L HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 8.5m? 77A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage TO-220AB D2Pak TO-262 and Current IRF3706 IRF3706S IRF3706L Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage V 20 VGS Gate-to-Source Voltage ± 12 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 77 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 54 A IDM Pulsed Drain Current 280 PD @TC = 25°C Maximum Power Dissipation 88 W PD @TC = 100°C Maximum Power Dissipation 44 W Linear Derating Factor 0.59 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case –––

4.6. irf3709.pdf Size:121K _international_rectifier

PD - 94071 IRF3709 SMPS MOSFET IRF3709S IRF3709L Applications HEXFET® Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 9.0m? 90A for Telecom and Industrial Use High Frequency Buck Converters for Server Processor Power Synchronous FET Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity Benefits Ultra-Low Gate Impedance TO-220AB D2Pak TO-262 Very Low RDS(on) at 4.5V VGS IRF3709 IRF3709S IRF3709L Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 90 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A IDM Pulsed Drain Current 360 PD @TC = 25°C Maximum Power Dissipation 120 W PD @TA = 25°C Maximum Power Dissipation 3.1 W Linear Derating Factor 0.96 mW/°C TJ , TSTG Junction and S

See also transistors datasheet: IRF3205Z , IRF3205ZL , IRF3205ZS , IRF3305 , IRF3515L , IRF3610S , IRF3703 , IRF3704Z , IRF520 , IRF3704ZL , IRF3704ZS , IRF3707Z , IRF3707ZCL , IRF3707ZCS , IRF3707ZL , IRF3707ZS , IRF3708 .

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