IRF6201 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF6201

Type of IRF6201 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A:

Maximum junction temperature (Tj), °C:

Rise Time of IRF6201 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.00245

Package: SO8

Equivalent transistors for IRF6201

IRF6201 PDF documents for downloads:

4.1. irf620.pdf Size:184K _st

IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF620 200 V < 0.8 ? 6 A IRF620FI 200 V < 0.8 ? 4 A TYPICAL R = 0.55 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 2 APPLICATIONS 1 1 HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) TO-220 ISOWATT220 MOTOR CONTROL, AUDIO AMPLIFIERS INDUSTRIAL ACTUATORS DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF620 IRF620FI VDS Drain-source Voltage (VGS = 0) 200 V VDG R Drain- gate Voltage (RGS = 20 k?)200 V V Gate-source Voltage ± 20 V GS o I Drain Current (cont.) at T = 25 C6 4 A D c o I Drain Current (cont.) at T = 100 C4 2 A D c I (•) Drain Current (pulsed) 24 24 A DM o P Total Dissipation at T = 25 C70 30 W tot c Derating Factor 0.56 0.24 W/oC V Insulation Withstand Vol

4.2. irf620b.pdf Size:875K _fairchild_semi

November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 200V, RDS(on) = 0.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF620B IRFS620B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Cont

4.3. irf620.pdf Size:886K _international_rectifier

PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027 www.vishay.com 5 IRF620PbF Document Number: 91027 www.vishay.com 6 IRF620PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) 1.32 (.052) - A - 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.4. irf620spbf.pdf Size:1844K _international_rectifier

PD- 95748 IRF620SPbF • Lead-Free 8/23/04 Document Number: 91028 www.vishay.com 1 IRF620SPbF Document Number: 91028 www.vishay.com 2 IRF620SPbF Document Number: 91028 www.vishay.com 3 IRF620SPbF Document Number: 91028 www.vishay.com 4 IRF620SPbF Document Number: 91028 www.vishay.com 5 IRF620SPbF Document Number: 91028 www.vishay.com 6 IRF620SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD Ri

4.5. irf620s.pdf Size:182K _international_rectifier

4.6. irf620a.pdf Size:931K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 Continuous Drain Current (TC=25 o ) C 5 ID A Continuous Drain Current (TC=100 o C) 3.2 IDM Drain Current-Pulsed A 1 18 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 67 O IAR Avalanche Current 5 A 1 O EAR Repetitive Avalanche Energy 1 4.7 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.0 V/ns O Total Power Dissipation (TC=25 o ) C 47 W PD o Linear Derating Factor C 0.38 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering o C TL 300 Purposes, 1/8 “

See also transistors datasheet: IRF4104 , IRF4104G , IRF4104S , IRF540Z , IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , 75339P , IRF630N , IRF630NL , IRF630NS , IRF640N , IRF640NL , IRF640NS , IRF6603 , IRF6604 .

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