MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF640N
  IRF640N
  IRF640N
 
IRF640N
  IRF640N
  IRF640N
 
IRF640N
  IRF640N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP04N70BI-H-HF
AP04N70BP-A ..AP2451GY-HF
AP2530AGY-HF ..AP4439GM-HF
AP4439GMT-HF ..AP73T02GJ-HF
AP73T03AGH-HF ..AP9575GH-HF
AP9575GI-HF ..AP9T15GH
AP9T15GJ ..APT8067HVR
APT8075BN ..AUIRFS4321
AUIRFS4410Z ..BF994
BF994S ..BLF7G27LS-150P
BLF7G27LS-200PB ..BSL215P
BSL307SP ..BUK203-50Y
BUK204-50Y ..BUK761R8-30C
BUK7620-100A ..BUK9E08-55B
BUK9E3R2-40B ..CEB21A2
CEB3060 ..CEM3060
CEM3083 ..CEU02N65A
CEU02N65G ..DMN3024LSS
DMN3030LSS ..FCA47N60
FCA47N60F ..FDC2612
FDC3512 ..FDG313N
FDG314P ..FDMS3672
FDMS3672 ..FDP6670AL
FDP7030BL ..FDS6930A
FDS6930B ..FMD15-06KC5
FMD15-06KC5 ..FQP12P20
FQP13N06L ..FRE460D
FRE460H ..FSL23AOR
FSL430D ..H7N0312AB
H7N0312LD ..HAT2185WP
HAT2187WP ..HUF76131SK8
HUF76132P3 ..IPB123N10N3G
IPB12CNE8NG ..IPD60R600E6
IPD60R750E6 ..IPP080N03LG
IPP080N06NG ..IRC220
IRC224 ..IRF3808
IRF3808S ..IRF6785
IRF6794M ..IRF7805
IRF7805A ..IRFB3307
IRFB3307Z ..IRFI5210
IRFI530A ..IRFP360LC
IRFP3703 ..IRFS23N20D
IRFS240 ..IRFSL41N15D
IRFSL4227 ..IRFZ44
IRFZ44A ..IRLML0030
IRLML0040 ..IXBJ40N140
IXBJ40N160 ..IXFH60N50P3
IXFH66N20Q ..IXFN130N30
IXFN132N50P3 ..IXFR80N15Q
IXFR80N20Q ..IXFX64N50P
IXFX64N50Q3 ..IXTE250N10
IXTF03N400 ..IXTK180N15
IXTK180N15P ..IXTP6N50P
IXTP70N075T2 ..IXTV26N50P
IXTV26N50PS ..KF7N60F
KF7N60P ..KP739A
KP739B ..MMBF4416
MMBF4416A ..MTDK1S6R
MTDK3S6R ..MTN6515J3
MTN6680Q8 ..NDF05N50Z
NDF06N60Z ..NTGS3455
NTGS4111P ..PHB110NQ08T
PHB11N50E ..PMN34LN
PMN34UN ..PSMN8R0-40PS
PSMN8R2-80YS ..RFP14N06L
RFP15N05L ..RJK2511DPK
RJK2555DPA ..RT1A050ZP
RT1A060AP ..SDF9130JAB
SDF9140 ..SI2300
SI2301 ..SML1004R2KN
SML1004RAN ..SMN01L20Q
SMN01Z30Q ..SSD02N65
SSD04N65 ..SSM3J01T
SSM3J02F ..SSM6L36FE
SSM6L36TU ..STB140NF75
STB141NF55 ..STD35N3LH5
STD35NF06 ..STF30NM50N
STF32N65M5 ..STL50N3LLH5
STL52N25M5 ..STP36N06L
STP36N06LFI ..STP9NK50Z
STP9NK60Z ..STW43NM60ND
STW45NM50 ..TK2A65D
TK2P60D ..TPC8086
TPC8087 ..TPCP8105
TPCP8106 ..UTN3055
UTP45N02 ..ZXM64P02X
ZXM64P035L3 ..ZXMS6006SG
 
IRF640N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF640N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF640N

Type of IRF640N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C:

Rise Time of IRF640N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: TO220AB

Equivalent transistors for IRF640N

IRF640N PDF doc:

1.1. irf640n.pdf Size:155K _international_rectifier

IRF640N
IRF640N
PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET® Power MOSFET Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15? Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

4.1. irf640.rev1.pdf Size:109K _motorola

IRF640N
IRF640N
ClibPDF - www.fastio.com ClibPDF - www.fastio.com ClibPDF - www.fastio.com

4.2. irf640_s_1.pdf Size:97K _philips

IRF640N
IRF640N
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 16 A g RDS(ON) ? 180 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source

4.3. irf640_irf640fp.pdf Size:332K _st

IRF640N
IRF640N
IRF640 IRF640FP N-channel 200V - 0.15? - 18A TO-220/TO-220FP Mesh overlay™ Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18? 18A IRF640FP 200V <0.18? 18A ¦ Extremely high dv/dt capability 3 3 2 2 ¦ Very low intrinsic capacitances 1 1 TO-220 TO-220FP ¦ Gate charge minimized Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with Internal schematic diagram standard parts from various sources. Applications ¦ Switching application Order codes Part number Marking Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Obsolete Product(s) - Obsolete Product(s) Contents IRF640 - IRF640FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . .

4.4. irf640f_fp.pdf Size:107K _st

IRF640N
IRF640N
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A TO-220/TO-220FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 18 A ? TYPICAL RDS(on) = 0.150 ? EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP V Drain-source Voltage (V = 0) 200 V DS GS VDGR 200 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Curr

4.5. irf640.pdf Size:57K _st

IRF640N
IRF640N
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 ? 18 A TYPICAL R = 0.150 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k ) 200 V ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Current (co

4.6. irf640b_irfs640b.pdf Size:916K _fairchild_semi

IRF640N
IRF640N
November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF640B IRFS640B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Cont

4.7. irf640pbf.pdf Size:2211K _international_rectifier

IRF640N
IRF640N
PD - 94930 IRF640PbF • Lead-Free 1/8/04 Document Number: 91036 www.vishay.com 1 IRF640PbF Document Number: 91036 www.vishay.com 2 IRF640PbF Document Number: 91036 www.vishay.com 3 IRF640PbF Document Number: 91036 www.vishay.com 4 IRF640PbF Document Number: 91036 www.vishay.com 5 IRF640PbF Document Number: 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0.

4.8. irf640s.pdf Size:228K _international_rectifier

IRF640N
IRF640N
PD -90902B IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18? 150°C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost- effectiveness. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any D 2 Pak TO-262 existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF640L) is available for low-profile applications. Absolute Maximum Ra

4.9. irf640.pdf Size:178K _international_rectifier

IRF640N
IRF640N

4.10. irf640s-l.pdf Size:935K _international_rectifier

IRF640N
IRF640N
PD - 95113 IRF640S/LPbF • Lead-Free 3/16/04 Document Number: 91037 www.vishay.com 1 IRF640S/LPbF Document Number: 91037 www.vishay.com 2 IRF640S/LPbF Document Number: 91037 www.vishay.com 3 IRF640S/LPbF Document Number: 91037 www.vishay.com 4 IRF640S/LPbF Document Number: 91037 www.vishay.com 5 IRF640S/LPbF Document Number: 91037 www.vishay.com 6 IRF640S/LPbF Document Number: 91037 www.vishay.com 7 IRF640S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 8 IRF640S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 9 IRF640S/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inc

4.11. irf640a.pdf Size:942K _samsung

IRF640N
IRF640N
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ?(Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C ) 18 ID A Continuous Drain Current (TC=100 oC 11.4 ) IDM Drain Current-Pulsed 1 72 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 216 O IAR Avalanche Current 1 18 A O EAR Repetitive Avalanche Energy 1 mJ 13.9 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipation (TC=25 o ) C 139 W PD o Linear Derating Factor C 1.11 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

4.12. irf640_sihf640.pdf Size:196K _vishay

IRF640N
IRF640N
IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.18 RoHS* • Fast Switching Qg (Max.) (nC) 70 COMPLIANT • Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D G S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. N-Channel MOSFET ORDERING INFORMATION TO-220AB Package IRF640PbF Lead (Pb)-free SiHF640-E3 IRF640 SnPb SiHF640 ABSOLUTE

4.13. irf640.pdf Size:183K _inchange_semiconductor

IRF640N
IRF640N
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 18 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 ?/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Pr

4.14. irf640.pdf Size:976K _wietron

IRF640N
IRF640N
IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)<0.18?@VGS=10V 1 * Single Pulse Avalanche Energy Rated 2 3 * SOA is Power Dissipation Limited 1. GATE 2. DRAIN * Nanosecond Switching Speed 3. SOURCE * Linear Transfer Characteristics TO-220AB * High Input Impedance Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 200 V VGS Gate-Source Voltage ±20 Continuous Drain Current, (VGS@10V, TC=25?C) 18 ID , (VGS@10V, TC=100?C) 11 A Pulsed Drain Current IDM 72 PD 125 Total Power Dissipation(TC=25?C) W R?JC 1 ?C/W Thermal Resistance Junction-case Thermal Resistance Junction-ambient R?JA 62 ?C/W ?C +150 Operating Junction Temperature Range T J Storage Temperature Range T ?C stg - 55~+150 WEITRON 1/6 04-Nov-08 http://www.weitron.com.

See also transistors datasheet: IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , IRF6201 , IRF630N , IRF630NL , IRF630NS , IRF1404 , IRF640NL , IRF640NS , IRF6603 , IRF6604 , IRF6607 , IRF6608 , IRF6609 , IRF6610 .

Keywords

 IRF640N Datasheet  IRF640N Datenblatt  IRF640N RoHS  IRF640N Distributor
 IRF640N Application Notes  IRF640N Component  IRF640N Circuit  IRF640N Schematic
 IRF640N Equivalent  IRF640N Cross Reference  IRF640N Data Sheet  IRF640N Fiche Technique

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