MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF640N
  IRF640N
  IRF640N
  IRF640N
 
IRF640N
  IRF640N
  IRF640N
  IRF640N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
IRF640N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF640N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF640N

Type of IRF640N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C:

Rise Time of IRF640N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: TO220AB

Equivalent transistors for IRF640N - Cross-Reference Search

IRF640N PDF doc:

1.1. irf640n.pdf Size:155K _international_rectifier

IRF640N
IRF640N
PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15? Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

4.1. irf640.rev1.pdf Size:109K _motorola

IRF640N
IRF640N
ClibPDF - www.fastio.com ClibPDF - www.fastio.com ClibPDF - www.fastio.com

4.2. irf640_s_1.pdf Size:97K _philips

IRF640N
IRF640N
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 A g RDS(ON) ? 180 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source

4.3. irf640_irf640fp.pdf Size:332K _st

IRF640N
IRF640N
IRF640 IRF640FP N-channel 200V - 0.15? - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18? 18A IRF640FP 200V <0.18? 18A Extremely high dv/dt capability 3 3 2 2 Very low intrinsic capacitances 1 1 TO-220 TO-220FP Gate charge minimized Description This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with Internal schematic diagram standard parts from various sources. Applications Switching application Order codes Part number Marking Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Obsolete Product(s) - Obsolete Product(s) Contents IRF640 - IRF640FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . .

4.4. irf640f_fp.pdf Size:107K _st

IRF640N
IRF640N
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A TO-220/TO-220FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 18 A ? TYPICAL RDS(on) = 0.150 ? EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 companys consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP V Drain-source Voltage (V = 0) 200 V DS GS VDGR 200 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Curr

4.5. irf640.pdf Size:57K _st

IRF640N
IRF640N
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 ? 18 A TYPICAL R = 0.150 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 companys consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k ) 200 V ? VGS Gate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Current (co

4.6. irf640b_irfs640b.pdf Size:916K _fairchild_semi

IRF640N
IRF640N
November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter IRF640B IRFS640B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Cont

4.7. irf640_rf1s640_rf1s640sm.pdf Size:128K _fairchild_semi

IRF640N
IRF640N
IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs • 18A, 200V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.180Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode • SOA is Power Dissipation Limited of operation. All of these power MOSFETs are designed for • Nanosecond Switching Speed applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high • Linear Transfer Characteristics power bipolar switching transistors requiring high speed and • High Input Impedance low gate drive power. These types can be operated directly • Related Literature from integrated circuits. - TB334 “Guidelines for Soldering Surface Mount Formerly developmental type TA17422. C

4.8. irf640pbf.pdf Size:2211K _international_rectifier

IRF640N
IRF640N
PD - 94930 IRF640PbF Lead-Free 1/8/04 Document Number: 91036 www.vishay.com 1 IRF640PbF Document Number: 91036 www.vishay.com 2 IRF640PbF Document Number: 91036 www.vishay.com 3 IRF640PbF Document Number: 91036 www.vishay.com 4 IRF640PbF Document Number: 91036 www.vishay.com 5 IRF640PbF Document Number: 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0.

4.9. irf640s.pdf Size:228K _international_rectifier

IRF640N
IRF640N
PD -90902B IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18Ω 150°C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost- effectiveness. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any D 2 Pak TO-262 existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF640L) is available for low-profile applications. Absolute Max

4.10. irf640.pdf Size:178K _international_rectifier

IRF640N
IRF640N

4.11. irf640s-l.pdf Size:935K _international_rectifier

IRF640N
IRF640N
PD - 95113 IRF640S/LPbF Lead-Free 3/16/04 Document Number: 91037 www.vishay.com 1 IRF640S/LPbF Document Number: 91037 www.vishay.com 2 IRF640S/LPbF Document Number: 91037 www.vishay.com 3 IRF640S/LPbF Document Number: 91037 www.vishay.com 4 IRF640S/LPbF Document Number: 91037 www.vishay.com 5 IRF640S/LPbF Document Number: 91037 www.vishay.com 6 IRF640S/LPbF Document Number: 91037 www.vishay.com 7 IRF640S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 8 IRF640S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 9 IRF640S/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inc

4.12. irf640a.pdf Size:942K _samsung

IRF640N
IRF640N
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ?(Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C ) 18 ID A Continuous Drain Current (TC=100 oC 11.4 ) IDM Drain Current-Pulsed 1 72 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 216 O IAR Avalanche Current 1 18 A O EAR Repetitive Avalanche Energy 1 mJ 13.9 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipation (TC=25 o ) C 139 W PD o Linear Derating Factor C 1.11 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

4.13. irf640_sihf640.pdf Size:196K _vishay

IRF640N
IRF640N
IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D G S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. N-Channel MOSFET ORDERING INFORMATION TO-220AB Package IRF640PbF Lead (Pb)-free SiHF640-E3 IRF640 SnPb SiHF640 ABSOLUTE

4.14. irf640_irf641_irf642_irf643_rf1s640.pdf Size:51K _harris_semi

IRF640N
IRF640N
IRF640, IRF641, IRF642, S E M I C O N D U C T O R IRF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power • rDS(ON) = 0.18Ω and 0.22Ω MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode • Single Pulse Avalanche Energy Rated of operation. All of these power MOSFETs are designed for • SOA is Power Dissipation Limited applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power • Nanosecond Switching Speed bipolar switching transistors requiring high speed and low • Linear Transfer Characteristics gate drive power. These types can be operated directly from integrated circuits. • High Input Impedance Formerly develop

4.15. irf640.pdf Size:183K _inchange_semiconductor

IRF640N
IRF640N
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 18 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 ?/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Pr

4.16. irf640.pdf Size:976K _wietron

IRF640N
IRF640N
IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)<0.18Ω@VGS=10V 1 * Single Pulse Avalanche Energy Rated 2 3 * SOA is Power Dissipation Limited 1. GATE 2. DRAIN * Nanosecond Switching Speed 3. SOURCE * Linear Transfer Characteristics TO-220AB * High Input Impedance Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 200 V VGS Gate-Source Voltage ±20 Continuous Drain Current, (VGS@10V, TC=25˚C) 18 ID , (VGS@10V, TC=100˚C) 11 A Pulsed Drain Current IDM 72 PD 125 Total Power Dissipation(TC=25˚C) W RθJC 1 ˚C/W Thermal Resistance Junction-case Thermal Resistance Junction-ambient RθJA 62 ˚C/W ˚C +150 Operating Junction Temperature Range T J Storage Temperature Range T ˚C stg - 55~+150 WEITRON 1/6 04-Nov-08 http://ww

See also transistors datasheet: IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , IRF6201 , IRF630N , IRF630NL , IRF630NS , IRF1404 , IRF640NL , IRF640NS , IRF6603 , IRF6604 , IRF6607 , IRF6608 , IRF6609 , IRF6610 .

Keywords

 IRF640N Datasheet  IRF640N Datenblatt  IRF640N RoHS  IRF640N Distributor
 IRF640N Application Notes  IRF640N Component  IRF640N Circuit  IRF640N Schematic
 IRF640N Equivalent  IRF640N Cross Reference  IRF640N Data Sheet  IRF640N Fiche Technique

 

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