MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF640N
  IRF640N
  IRF640N
 
IRF640N
  IRF640N
  IRF640N
 
IRF640N
  IRF640N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB35N06ZL
MTB50P03HDL ..NTB35N15
NTB45N06 ..NTP5404N
NTP5863N ..PHP69N03LT
PHP6N10E ..PSMN063-150D
PSMN069-100YS ..RF1K49221
RF1K49223 ..RJK0396DPA
RJK0397DPA ..RQJ0201UGDQA
RQJ0202VGDQA ..SDF11N90GAF
SDF120JAA-D ..SFS9Z24
SFS9Z34 ..SMG3401
SMG3402 ..SML50H19
SML50H24 ..SPI08N80C3
SPI11N60C3 ..SSG4910N
SSG4920N ..SSM3K320T
SSM3K329R ..SSQ5N50
SSQ6N60 ..STD10N10L-1
STD10N10LT4 ..STD95N4F3
STD95N4LF3 ..STI18NM60N
STI200N6F3 ..STP18N10
STP18N10FI ..STP60N55F3
STP60NF03L ..STV33N10
STV36N06 ..TJ80S04M3L
TJ8S06M3L ..TPC6001
TPC6003 ..TPCA8080
TPCA8081 ..UT2311
UT2312 ..WTL2602
WTL2622 ..ZXMP4A57E6
ZXMP6A13F ..ZXMS6006SG
 
IRF640N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF640N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF640N

Type of IRF640N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C:

Rise Time of IRF640N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: TO220AB

Equivalent transistors for IRF640N

IRF640N PDF doc:

1.1. irf640n.pdf Size:155K _international_rectifier

IRF640N
IRF640N
PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET® Power MOSFET Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15? Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

4.1. irf640.rev1.pdf Size:109K _motorola

IRF640N
IRF640N
ClibPDF - www.fastio.com ClibPDF - www.fastio.com ClibPDF - www.fastio.com

4.2. irf640_s_1.pdf Size:97K _philips

IRF640N
IRF640N
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 16 A g RDS(ON) ? 180 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source

4.3. irf640_irf640fp.pdf Size:332K _st

IRF640N
IRF640N
IRF640 IRF640FP N-channel 200V - 0.15? - 18A TO-220/TO-220FP Mesh overlay™ Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18? 18A IRF640FP 200V <0.18? 18A ¦ Extremely high dv/dt capability 3 3 2 2 ¦ Very low intrinsic capacitances 1 1 TO-220 TO-220FP ¦ Gate charge minimized Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with Internal schematic diagram standard parts from various sources. Applications ¦ Switching application Order codes Part number Marking Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Obsolete Product(s) - Obsolete Product(s) Contents IRF640 - IRF640FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . .

4.4. irf640f_fp.pdf Size:107K _st

IRF640N
IRF640N
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A TO-220/TO-220FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 18 A ? TYPICAL RDS(on) = 0.150 ? EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP V Drain-source Voltage (V = 0) 200 V DS GS VDGR 200 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Curr

4.5. irf640.pdf Size:57K _st

IRF640N
IRF640N
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 ? 18 A TYPICAL R = 0.150 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k ) 200 V ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Current (co

4.6. irf640b_irfs640b.pdf Size:916K _fairchild_semi

IRF640N
IRF640N
November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF640B IRFS640B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Cont

4.7. irf640pbf.pdf Size:2211K _international_rectifier

IRF640N
IRF640N
PD - 94930 IRF640PbF • Lead-Free 1/8/04 Document Number: 91036 www.vishay.com 1 IRF640PbF Document Number: 91036 www.vishay.com 2 IRF640PbF Document Number: 91036 www.vishay.com 3 IRF640PbF Document Number: 91036 www.vishay.com 4 IRF640PbF Document Number: 91036 www.vishay.com 5 IRF640PbF Document Number: 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0.

4.8. irf640s.pdf Size:228K _international_rectifier

IRF640N
IRF640N
PD -90902B IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18? 150°C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost- effectiveness. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any D 2 Pak TO-262 existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF640L) is available for low-profile applications. Absolute Maximum Ra

4.9. irf640.pdf Size:178K _international_rectifier

IRF640N
IRF640N

4.10. irf640s-l.pdf Size:935K _international_rectifier

IRF640N
IRF640N
PD - 95113 IRF640S/LPbF • Lead-Free 3/16/04 Document Number: 91037 www.vishay.com 1 IRF640S/LPbF Document Number: 91037 www.vishay.com 2 IRF640S/LPbF Document Number: 91037 www.vishay.com 3 IRF640S/LPbF Document Number: 91037 www.vishay.com 4 IRF640S/LPbF Document Number: 91037 www.vishay.com 5 IRF640S/LPbF Document Number: 91037 www.vishay.com 6 IRF640S/LPbF Document Number: 91037 www.vishay.com 7 IRF640S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 8 IRF640S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 9 IRF640S/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inc

4.11. irf640a.pdf Size:942K _samsung

IRF640N
IRF640N
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ?(Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C ) 18 ID A Continuous Drain Current (TC=100 oC 11.4 ) IDM Drain Current-Pulsed 1 72 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 216 O IAR Avalanche Current 1 18 A O EAR Repetitive Avalanche Energy 1 mJ 13.9 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipation (TC=25 o ) C 139 W PD o Linear Derating Factor C 1.11 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

4.12. irf640_sihf640.pdf Size:196K _vishay

IRF640N
IRF640N
IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.18 RoHS* • Fast Switching Qg (Max.) (nC) 70 COMPLIANT • Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D G S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. N-Channel MOSFET ORDERING INFORMATION TO-220AB Package IRF640PbF Lead (Pb)-free SiHF640-E3 IRF640 SnPb SiHF640 ABSOLUTE

4.13. irf640.pdf Size:183K _inchange_semiconductor

IRF640N
IRF640N
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 18 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 ?/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Pr

4.14. irf640.pdf Size:976K _wietron

IRF640N
IRF640N
IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)<0.18?@VGS=10V 1 * Single Pulse Avalanche Energy Rated 2 3 * SOA is Power Dissipation Limited 1. GATE 2. DRAIN * Nanosecond Switching Speed 3. SOURCE * Linear Transfer Characteristics TO-220AB * High Input Impedance Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 200 V VGS Gate-Source Voltage ±20 Continuous Drain Current, (VGS@10V, TC=25?C) 18 ID , (VGS@10V, TC=100?C) 11 A Pulsed Drain Current IDM 72 PD 125 Total Power Dissipation(TC=25?C) W R?JC 1 ?C/W Thermal Resistance Junction-case Thermal Resistance Junction-ambient R?JA 62 ?C/W ?C +150 Operating Junction Temperature Range T J Storage Temperature Range T ?C stg - 55~+150 WEITRON 1/6 04-Nov-08 http://www.weitron.com.

See also transistors datasheet: IRF540ZL , IRF540ZS , IRF5801 , IRF5802 , IRF6201 , IRF630N , IRF630NL , IRF630NS , IRF1404 , IRF640NL , IRF640NS , IRF6603 , IRF6604 , IRF6607 , IRF6608 , IRF6609 , IRF6610 .

Keywords

 IRF640N Datasheet  IRF640N Datenblatt  IRF640N RoHS  IRF640N Distributor
 IRF640N Application Notes  IRF640N Component  IRF640N Circuit  IRF640N Schematic
 IRF640N Equivalent  IRF640N Cross Reference  IRF640N Data Sheet  IRF640N Fiche Technique

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