IRF6618 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF6618

Type of IRF6618 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 89

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A:

Maximum junction temperature (Tj), °C:

Rise Time of IRF6618 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0022

Package: DirectFET_MT

Equivalent transistors for IRF6618

IRF6618 PDF documents for downloads:

1.1. irf6618.pdf Size:193K _international_rectifier

PD - 94726C IRF6618/IRF6618TR1 HEXFET® Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs 30V 2.2m?@VGS = 10V 43 nC l Ideal for CPU Core DC-DC Converters 3.4m?@VGS = 4.5V l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC MT Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack

4.1. irf6612.pdf Size:200K _international_rectifier

PD - 95842 IRF6612/IRF6612TR1 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) l Application Specific MOSFETs 30V 3.3m?@VGS = 10V 30nC 4.4m?@VGS = 4.5V l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC MX Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET p

4.2. irf6617.pdf Size:170K _international_rectifier

PD - 95847 IRF6617 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS(on) max Qg(typ.) l Low Conduction Losses 30V 8.1m?@VGS = 10V 11nC l Low Switching Losses 10.3m?@VGS = 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques DirectFET™ ISOMETRIC ST Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT Description The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac- turing methods and processes. The Direc

See also transistors datasheet: IRF6609 , IRF6610 , IRF6611 , IRF6612 , IRF6613 , IRF6614 , IRF6616 , IRF6617 , BF245A , IRF6619 , IRF6620 , IRF6621 , IRF6622 , IRF6623 , IRF6626 , IRF6628 , IRF6629 .

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