IRF6622 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF6622

Type of IRF6622 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 34

Maximum drain-source voltage |Uds|, V: 25V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A:

Maximum junction temperature (Tj), °C:

Rise Time of IRF6622 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0063

Package: DirectFET_SQ

Equivalent transistors for IRF6622

IRF6622 PDF documents for downloads:

4.1. irf6620.pdf Size:180K _international_rectifier

PD - 95823A IRF6620 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS(on) max Qg(typ.) l Low Conduction Losses 20V 2.7m?@VGS = 10V 28nC l Low Switching Losses 3.6m?@VGS = 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques DirectFET™ ISOMETRIC MX Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectF

4.2. irf6623.pdf Size:170K _international_rectifier

PD - 95824B IRF6623 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS(on) max Qg(typ.) l Low Conduction Losses 20V 5.7m?@VGS = 10V 11nC l Low Switching Losses 9.7m?@VGS = 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques DirectFET™ ISOMETRIC ST Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6623 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac- turing methods and processes. The Direct

5.1. irf6604.pdf Size:56K _international_rectifier

PD - 94365 PROVISIONAL IRF6604 DirectFETTM Power MOSFET Application Specific MOSFETs VDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters 30V 11.5m?@VGS = 7.0V 16A Low Conduction Losses 13m?@VGS = 4.5V 14A Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC Description The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6604 balances both low r

5.2. irf6612.pdf Size:200K _international_rectifier

PD - 95842 IRF6612/IRF6612TR1 HEXFET® Power MOSFET VDSS RDS(on) max Qg(typ.) l Application Specific MOSFETs 30V 3.3m?@VGS = 10V 30nC 4.4m?@VGS = 4.5V l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC MX Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech- niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET p

5.3. irf6607.pdf Size:599K _international_rectifier

PD - 94574 IRF6607 HEXFET® Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters 30V 3.3m?@VGS = 10V 50nC l Low Conduction Losses 4.4m?@VGS = 4.5V l High Cdv/dt Immunity l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC Description The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6607 balances both low resistance and low charge along wi

5.4. irf6609.pdf Size:201K _international_rectifier

PD - 95822 IRF6609 HEXFET® Power MOSFET VDSS RDS(on) max Qg l Low Conduction Losses 20V 2.0m?@VGS = 10V 46nC l Low Switching Losses 2.6m?@VGS = 4.5V l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC MT Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to m

5.5. irf6618.pdf Size:193K _international_rectifier

PD - 94726C IRF6618/IRF6618TR1 HEXFET® Power MOSFET VDSS RDS(on) max Qg l Application Specific MOSFETs 30V 2.2m?@VGS = 10V 43 nC l Ideal for CPU Core DC-DC Converters 3.4m?@VGS = 4.5V l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC MT Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack

5.6. irf6691.pdf Size:224K _international_rectifier

PD - 95867 IRF6691 HEXFET® Power MOSFET plus Schottky Diode l Application Specific MOSFETs VDSS RDS(on) max Qg(typ.) l Integrates Monolithic Trench Schottky Diode 20V 2.5m?@VGS = 4.5V 47nC l Ideal for CPU Core DC-DC Converters 1.8m?@VGS = 10V l Low Conduction Losses l Low Reverse Recovery Losses l Low Switching Losses l Low Reverse Recovery Charge and Low Vf l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible DirectFET™ ISOMETRIC MT l Compatible with existing Surface Mount Techniques Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT Description The IRF6691 combines IR’s industry leading DirectFET package technology with the latest monolithic die technology, which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is

5.7. irf6602.pdf Size:131K _international_rectifier

PD - 94363A IRF6602 DirectFETTM Power MOSFET Application Specific MOSFETs VDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters 20V 13m?@VGS = 10V 11A Low Conduction Losses 19m?@VGS = 4.5V 8.8A Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC Description The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6602 balances both low resistance and

5.8. irf6603.pdf Size:52K _international_rectifier

PD - 94364A PROVISIONAL IRF6603 DirectFETTM Power MOSFET Application Specific MOSFETs VDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters 30V 3.9m?@VGS = 10V 28A Low Conduction Losses 5.5m?@VGS = 4.5V 22A High Cdv/dt Immunity Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC Description The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6603 balances both low resistance and l

5.9. irf6617.pdf Size:170K _international_rectifier

PD - 95847 IRF6617 HEXFET® Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS(on) max Qg(typ.) l Low Conduction Losses 30V 8.1m?@VGS = 10V 11nC l Low Switching Losses 10.3m?@VGS = 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques DirectFET™ ISOMETRIC ST Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT Description The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac- turing methods and processes. The Direc

5.10. irf6608.pdf Size:178K _international_rectifier

PD - 94727B IRF6608 HEXFET® Power MOSFET l Application Specific MOSFETs VDSS RDS(on) max Qg l Ideal for CPU Core DC-DC Converters l Low Conduction Losses 30V 9.0m?@VGS = 10V 16nC l Low Switching Losses 11m?@VGS = 4.5V l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET™ ISOMETRIC ST Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details) SQ SX ST MQ MX MT Description The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack

5.11. irf6601.pdf Size:130K _international_rectifier

PD - 94366C IRF6601 DirectFETTM Power MOSFET l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters VDSS RDS(on) max ID l Low Conduction Losses 20V 3.8m?@VGS = 10V 26A l Low Switching Losses 5.0m?@VGS = 4.5V 21A l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with exisiting Surface Mount Techniques DirectFET™ ISOMETRIC Description The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6601 balances both low resistance and low charge a

See also transistors datasheet: IRF6613 , IRF6614 , IRF6616 , IRF6617 , IRF6618 , IRF6619 , IRF6620 , IRF6621 , IRF730 , IRF6623 , IRF6626 , IRF6628 , IRF6629 , IRF6631 , IRF6633 , IRF6633A , IRF6635 .

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