IRF7456 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF7456

Type of IRF7456 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A:

Maximum junction temperature (Tj), °C:

Rise Time of IRF7456 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0065

Package: SO8

Equivalent transistors for IRF7456

IRF7456 PDF documents for downloads:

1.1. irf7456.pdf Size:165K _international_rectifier

PD- 93840B IRF7456 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 20V 0.0065? 16A with Synchronous Rectification Benefits A A Ultra-Low RDS(on) at 4.5V VGS 1 8 S D Low Charge and Low Gate Impedance to 2 7 S D Reduce Switching Losses 3 6 S D Fully Characterized Avalanche Voltage 4 5 and Current G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 16 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 130 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Max. Units R?JA Maximum Junction-to-Ambient 50 °C/W Typical SMPS Topologies Telecom 48V Input Converters with Logi

4.1. irf7452.pdf Size:104K _international_rectifier

PD- 93897C IRF7452 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.060? 4.5A Benefits Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D 2 7 Fully Characterized Capacitance Including S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.6 A IDM Pulsed Drain Current 36 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V in

4.2. irf7455.pdf Size:167K _international_rectifier

PD- 93842B IRF7455 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.0075? 15A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS A A Low Charge and Low Gate Impedance to 1 8 S D Reduce Switching Losses 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 120 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Max. Units R?JA Maximum Junction-to-Ambient 50 °C/W Typical SMPS Topologies Telecom 48V Input Converters with Logi

4.3. irf7459.pdf Size:112K _international_rectifier

PD- 93885B IRF7459 SMPS MOSFET Applications HEXFET® Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.0m? 12A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D Ultra-Low Gate Impedance 2 7 S D Very Low RDS(on) at 4.5V VGS 3 6 Fully Characterized Avalanche Voltage S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 10 A IDM Pulsed Drain Current 100 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead –

4.4. irf7457.pdf Size:120K _international_rectifier

PD- 93882D IRF7457 SMPS MOSFET HEXFET® Power MOSFET Applications High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 7.0m? 15A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D Ultra-Low RDS(on) 2 7 Very Low Gate Impedance S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 120 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 R?JA

4.5. irf7458.pdf Size:120K _international_rectifier

PD- 93892C IRF7458 SMPS MOSFET HEXFET® Power MOSFET Applications High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 8.0m? 14A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 Ultra-Low Gate Impedance S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 30 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A IDM Pulsed Drain Current 110 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 R?J

4.6. irf7451.pdf Size:209K _international_rectifier

PD- 93898A IRF7451 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 150V 0.09? 3.6A ? ? ? Benefits Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.9 A IDM Pulsed Drain Current 29 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 7.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––

4.7. irf7453.pdf Size:220K _international_rectifier

PD- 93899A IRF7453 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 250V 0.23? ?@VGS = 10V 2.2A ? ? Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.7 A IDM Pulsed Drain Current 17 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 13 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drai

4.8. irf7450.pdf Size:102K _international_rectifier

PD- 93893A IRF7450 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 200V 0.17? ?@VGS = 10V 2.5A ? ? Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.0 A IDM Pulsed Drain Current 20 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 11 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Dr

See also transistors datasheet: IRF7402 , IRF7413Q , IRF7413Z , IRF7450 , IRF7451 , IRF7452 , IRF7452Q , IRF7455 , IRL3103 , IRF7457 , IRF7458 , IRF7463 , IRF7465 , IRF7468 , IRF7469 , IRF7470 , IRF7473 .

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