All MOSFET. IRF7494 Datasheet

 

IRF7494 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF7494

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 5.2 A

Maximum Junction Temperature (Tj): 150 ┬░C

Maximum Drain-Source On-State Resistance (Rds): 0.044 Ohm

Package: SO8

IRF7494 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF7494 PDF doc:

1.1. irf7494.pdf Size:567K _international_rectifier

IRF7494
IRF7494

FOR REVIEW ONLY PD - 94641 PD - TBD IRF7494 HEXFET« Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 44m @VGS = 10V 150V 5.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characteriz

4.1. irf7493.pdf Size:92K _international_rectifier

IRF7494
IRF7494

PD - 94654 PROVISIONAL IRF7493 HEXFET« Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 80V 15m @VGS = 10V 9.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avalanche Vo

4.2. irf7492.pdf Size:105K _international_rectifier

IRF7494
IRF7494

PD - 94498 IRF7492 HEXFET« Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 200V 79m? ?@VGS = 10V 3.7A ? ? Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 App. Note AN1001) 5 G D Fully Characterized Avalanche Volta

4.3. irf7495pbf.pdf Size:146K _international_rectifier

IRF7494
IRF7494

´╗┐PD - 95288 IRF7495PbF HEXFET┬« Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 22m @VGS = 10V 7.3A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avala

4.4. irf7491.pdf Size:508K _international_rectifier

IRF7494
IRF7494

PD - 94537 IRF7491 HEXFET« Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 80V 16m?@VGS = 10V 9.7A Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and C

4.5. irf7490.pdf Size:141K _international_rectifier

IRF7494
IRF7494

PD - 94508 IRF7490 HEXFET« Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 100V 39mW@VGS=10V 37nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and Cu

Datasheet: IRF7475 , IRF7476 , IRF7478 , IRF7478Q , IRF7488 , IRF7490 , IRF7492 , IRF7493 , IRFZ34N , IRF7495 , IRF7607 , IRF7665S2 , IRF7739 , IRF7749L2 , IRF7759L2 , IRF7769L2 , IRF7779L2 .

 


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