IRF8113G MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF8113G

Type of IRF8113G transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A:

Maximum junction temperature (Tj), °C:

Rise Time of IRF8113G transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.006

Package: SO8

Equivalent transistors for IRF8113G

IRF8113G PDF documents for downloads:

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See also transistors datasheet: IRF7853 , IRF7854 , IRF7855 , IRF7862 , IRF8010 , IRF8010L , IRF8010S , IRF8113 , 3SK40 , IRF8252 , IRF8302M , IRF8304M , IRF8306M , IRF8308M , IRF8327S , IRF8707 , IRF8707G .

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