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IRFB3077G MOSFET (IC) Datasheet. Cross Reference Search. IRFB3077G Equivalent

Type Designator: IRFB3077G

Type of IRFB3077G transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 370

Maximum drain-source voltage |Uds|, V: 75

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 210

Maximum junction temperature (Tj), °C:

Rise Time of IRFB3077G transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0033

Package: TO220AB

IRFB3077G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFB3077G PDF doc:

5.1. irfb33n15d_irfs33n15d_irfsl33n15d.pdf Size:142K _international_rectifier

IRFB3077G
IRFB3077G

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056Ω 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

See also transistors datasheet: IRFB23N15D , IRFB23N20D , IRFB260N , IRFB3004 , IRFB3004G , IRFB3006 , IRFB3006G , IRFB3077 , TPC8107 , IRFB31N20D , IRFB3206 , IRFB3206G , IRFB3207 , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 .

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 IRFB3077G - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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