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IRFB31N20D MOSFET (IC) Datasheet. Cross Reference Search. IRFB31N20D Equivalent

Type Designator: IRFB31N20D

Type of IRFB31N20D transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 31

Maximum junction temperature (Tj), °C:

Rise Time of IRFB31N20D transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.082

Package: TO220AB

IRFB31N20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFB31N20D PDF doc:

5.1. irfb33n15d_irfs33n15d_irfsl33n15d.pdf Size:142K _international_rectifier

IRFB31N20D
IRFB31N20D

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056Ω 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

See also transistors datasheet: IRFB23N20D , IRFB260N , IRFB3004 , IRFB3004G , IRFB3006 , IRFB3006G , IRFB3077 , IRFB3077G , 40673 , IRFB3206 , IRFB3206G , IRFB3207 , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 , IRFB3306G .

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