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IRFB3207 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB3207

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 330 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 180 A

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: TO220AB

IRFB3207 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFB3207 PDF doc:

5.1. irfb33n15d_irfs33n15d_irfsl33n15d.pdf Size:142K _international_rectifier

IRFB3207
IRFB3207

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056Ω 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

Datasheet: IRFB3004G , IRFB3006 , IRFB3006G , IRFB3077 , IRFB3077G , IRFB31N20D , IRFB3206 , IRFB3206G , BUK455-200A , IRFB3207Z , IRFB3207ZG , IRFB3256 , IRFB3306 , IRFB3306G , IRFB3307 , IRFB3307Z , IRFB3307ZG .

 


IRFB3207
  IRFB3207
  IRFB3207
  IRFB3207
 
IRFB3207
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  IRFB3207
  IRFB3207
 

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